HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Ergebnisse: 720
Auswählen Bild Teile-Nr. Herst. Beschreibung Datenblatt Verfügbarkeit Preis (CHF) Ergebnisse in der Tabelle nach dem Einheitspreis bei Ihrer Menge filtern. Menge RoHS ECAD Model Technologie Montageart Verpackung/Gehäuse Transistorpolung Anzahl der Kanäle Vds - Drain-Source-Durchschlagspannung Id - Drain-Gleichstrom Rds On - Drain-Source-Widerstand Vgs - Gate-Source-Spannung Vgs th - Gate-Source-Schwellspannung Qg - Gate-Ladung Minimale Betriebstemperatur Maximale Betriebstemperatur Pd - Verlustleistung Kanalmodus Qualifikation Handelsname Verpackung
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/32A 186Auf Lager
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Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 32 A 320 mOhms - 30 V, 30 V 6.5 V 195 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs TRENCH HIPERFET PWR MOSFET 100V 360A 169Auf Lager
125erwartet ab 10.06.2026
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Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 360 A 2.9 mOhms - 20 V, 20 V 4.5 V 525 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs TRENCH HIPERFET PWR MOSFET 100V 420A 394Auf Lager
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Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 420 A 2.6 mOhms - 20 V, 20 V 5 V 670 nC - 55 C + 175 C 1.67 kW Enhancement HiPerFET Tube
IXYS MOSFETs 500V 44A 483Auf Lager
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Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 44 A 140 mOhms - 30 V, 30 V 3 V 98 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube
IXYS MOSFETs 44 Amps 800V 118Auf Lager
200erwartet ab 16.06.2026
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Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 44 A 190 mOhms - 30 V, 30 V 3 V 198 nC - 55 C + 150 C 1.2 mW Enhancement HiPerFET Tube
IXYS MOSFETs 850V Ultra Junction X-Class Pwr MOSFET 371Auf Lager
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Si Through Hole TO-264-3 N-Channel 1 Channel 850 V 50 A 105 mOhms - 30 V, 30 V 3.5 V 152 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs 500V 64A 413Auf Lager
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Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 64 A 85 mOhms - 30 V, 30 V 3 V 150 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube
IXYS MOSFETs 600V 64A 0.095Ohm PolarP3 Power MOSFET 284Auf Lager
475erwartet ab 16.03.2026
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Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 64 A 95 mOhms - 30 V, 30 V 5 V 145 nC - 55 C + 150 C 1.13 kW Enhancement HiPerFET Tube
IXYS MOSFETs 88 Amps 300V 0.04 Rds 185Auf Lager
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Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 88 A 40 mOhms - 20 V, 20 V 5 V 180 nC - 55 C + 150 C 600 W Enhancement HiPerFET Tube
IXYS MOSFETs 3 Amps 1200V 4.50 Rds 479Auf Lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms - 20 V, 20 V 5 V 39 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 300V 72A N-CH X3CLASS 419Auf Lager
1 450erwartet ab 01.05.2026
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Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 72 A 19 mOhms - 20 V, 20 V 2.5 V 82 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFET Power MOSFET 1 133Auf Lager
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Si Through Hole TO-3P-3 N-Channel 1 Channel 500 V 20 A 300 mOhms - 30 V, 30 V 5 V 36 nC - 55 C + 150 C 380 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/50A 169Auf Lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 50 A 72 mOhms - 30 V, 30 V 3.5 V 200 nC - 55 C + 150 C 570 W Enhancement HiPerFET Tube
IXYS MOSFETs TO268 300V 100A N-CH X3CLASS 151Auf Lager
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Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 100 A 13.5 mOhms - 20 V, 20 V 4.5 V 122 nC - 55 C + 150 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs TO268 250V 120A N-CH X3CLASS 932Auf Lager
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Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 250 V 120 A 12 mOhms - 20 V, 20 V 4.5 V 122 nC - 55 C + 150 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs TO268 300V 150A N-CH X3CLASS 193Auf Lager
Min.: 1
Mult.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 150 A 8.3 mOhms - 20 V, 20 V 4.5 V 177 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs TRENCHT2 HIPERFET PWR MOSFET 75V 340A 528Auf Lager
510erwartet ab 22.07.2026
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Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 75 V 340 A 3.2 mOhms - 20 V, 20 V 4 V 300 nC - 55 C + 175 C 935 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/80A TO-268HV 331Auf Lager
Min.: 1
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Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 3.5 V 140 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/100A Ultra Junction X2 120Auf Lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 100 A 30 mOhms - 30 V, 30 V 2.7 V 180 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/120A Ultra Junction X2 154Auf Lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 120 A 24 mOhms - 30 V, 30 V 2.7 V 225 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube

IXYS MOSFETs 160A 300V 128Auf Lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 160 A 19 mOhms - 20 V, 20 V 5 V 335 nC - 55 C + 150 C 1.39 kW Enhancement HiPerFET Tube

IXYS MOSFETs 230A 200V 370Auf Lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 230 A 7.5 mOhms - 20 V, 20 V 3 V 358 nC - 55 C + 175 C 1.67 kW Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/24A 180Auf Lager
120erwartet ab 10.04.2026
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Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 24 A 440 mOhms - 30 V, 30 V 3.5 V 140 nC - 55 C + 150 C 1 kW Enhancement HiPerFET Tube
IXYS MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET 409Auf Lager
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Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 150 V 360 A 4 mOhms - 20 V, 20 V 2.5 V 715 nC - 55 C + 175 C 1.67 mW Enhancement HiPerFET Tube

IXYS MOSFETs 44 Amps 800V 226Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 800 V 44 A 190 mOhms - 30 V, 30 V 5 V 198 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube