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Qorvo TGF2929 GaN RF Power Transistors

Qorvo TGF2929 GaN RF Power Transistors are discrete GaN (Gallium Nitride) on SiC (Silicon Carbide) HEMTs (High-Electron Mobility Transistor) that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

The Qorvo TGF2929 GaN RF Power Transistors are offered in industry standard hermetic air cavity packages and are ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. These devices can support pulsed and linear operations.

Features

  • DC to 3.5GHz frequency range
  • Output power (P3dB)
    • TGF2929-FL: 107W
    • TGF2929-FS: 107W
    • TGF2929-HM: 132W
  • Linear gain
    • TGF2929-FL: 14.0dB
    • TGF2929-FS: 14.0dB
    • TGF2929-HM: 17.4dB
  • Minimum PAE3dB
    • TGF2929-FL: 50%
    • TGF2929-FS: 50%
    • TGF2929-HM: 72%
  • Low thermal resistance package
  • CW and pulse capable
  • 28V supply voltage
  • 260mA drain bias current
  • -40°C to +85°C operating temperature range
  • Halogen free, Pb-free, and RoHS compliant

Applications

  • Military radar
  • Satcomm
  • Civilian radar
  • Land mobile and military radio communications
  • Professional and military radio communications
  • Test instrumentation
  • Wideband or narrowband amplifiers
  • Jammers

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Package Outline (TGF2929-FL)

Mechanical Drawing - Qorvo TGF2929 GaN RF Power Transistors

Package Outline (TGF2929-FS)

Mechanical Drawing - Qorvo TGF2929 GaN RF Power Transistors

Package Outline (TGF2929-HM)

Mechanical Drawing - Qorvo TGF2929 GaN RF Power Transistors
View Results ( 2 ) Page
Teilnummer Datenblatt Id - Drain-Gleichstrom Vds - Drain-Source-Durchschlagspannung Ausgangsleistung
TGF2929-FL TGF2929-FL Datenblatt 12 A 28 V 100 W
TGF2929-FS TGF2929-FS Datenblatt 12 A 28 V
Veröffentlichungsdatum: 2015-07-22 | Aktualisiert: 2022-03-11