SRAM

Risultati: 11 630
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (CHF) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Dimensioni memoria Organizzazione Tempo di accesso Frequenza di clock massima Tipo di interfaccia Tensione di alimentazione - Max. Tensione di alimentazione - Min. Corrente di alimentazione - Max Temperatura di lavoro minima Temperatura di lavoro massima Stile di montaggio Package/involucro Qualifica Confezione
Alliance Memory SRAM SRAM, 4Mb, 512K x 8, 5V, 44pin TSOP II, 20ns, Industrial Temp - Tray 103A magazzino
Min: 1
Mult.: 1

4 Mbit 512 k x 8 20 ns Parallel 5.5 V 4.5 V 100 mA - 40 C + 85 C SMD/SMT TSOP-II-44 Tray

ISSI SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v 769A magazzino
Min: 1
Mult.: 1
: 1 000

4 Mbit 256 k x 16 10 ns Parallel 3.6 V 3.135 V 110 mA - 40 C + 85 C SMD/SMT TSOP-44 Reel, Cut Tape, MouseReel
Alliance Memory SRAM 1M, 3.3V, 10ns, FAST 128K x 8 Asynch SRAM 17A magazzino
Min: 1
Mult.: 1

1 Mbit 128 k x 8 10 ns Parallel 3.6 V 3 V 150 mA - 40 C + 85 C SMD/SMT TSOP-II-32
GSI Technology SRAM 2.5 or 3.3V 2M x 36 72M
1 364In ordine
Min: 1
Mult.: 1

72 Mbit 2 M x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 270 mA, 345 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
Infineon Technologies SRAM ASYNC
48015.10.2026 previsto
Min: 1
Mult.: 1

16 Mbit 1 M x 16 10 ns Parallel 3.6 V 2.2 V 110 mA - 40 C + 85 C SMD/SMT VFBGA-48 Tray
Infineon Technologies SRAM 16Mb Fast SRAM With ECC
879In ordine
Min: 1
Mult.: 1

16 Mbit 2 M x 8 10 ns Parallel 3.6 V 2.2 V 110 mA - 40 C + 85 C SMD/SMT TSOP-II-54 Tray
ISSI SRAM 18M (512Kx36) 200MHz Sync SRAM 2.5v 6A magazzino
Min: 1
Mult.: 1

18 Mbit 512 k x 36 3.1 ns 200 MHz Parallel 2.625 V 2.375 V 475 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
ISSI SRAM 8Mb,High-Speed/Low Power,Async with ECC,1Mb x 8,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS 9A magazzino
Min: 1
Mult.: 1

8 Mbit 1 M x 8 10 ns Parallel 3.6 V 2.4 V 50 mA - 40 C + 85 C SMD/SMT BGA-48 Tray

ISSI SRAM 1Mb 3.6v 10ns 64Kx16 LPAsync SRAM 54A magazzino
Min: 1
Mult.: 1

1 Mbit 64 k x 16 10 ns Parallel 3.6 V 2.4 V 35 mA - 40 C + 125 C SMD/SMT TSOP-44 Tray
ISSI SRAM 18Mb,"No-Wait"/Flowthrough,Sync,512K x 36,6.5ns,3.3v/2.5v - I/O,100 Pin TQFP, RoHS 29A magazzino
Min: 1
Mult.: 1

18 Mbit 512 k x 36 6.5 ns 133 MHz Parallel 3.465 V 3.135 V 260 mA - 40 C + 85 C SMD/SMT QFP-100
ISSI SRAM 8Mb 256Kx36 7.5ns Sync SRAM 3.3v 7A magazzino
Min: 1
Mult.: 1

9 Mbit 256 k x 36 7.5 ns 117 MHz Parallel 3.465 V 3.135 V 185 mA - 40 C + 85 C SMD/SMT TQFP-100 Tube
ISSI SRAM 18Mb 512Kx36 7.5ns Sync SRAM 3.3v 14A magazzino
Min: 1
Mult.: 1

18 Mbit 512 k x 36 7.5 ns 117 MHz Parallel 3.465 V 3.135 V 250 mA - 40 C + 85 C SMD/SMT TQFP-100 Tube
Alliance Memory SRAM SRAM, 4Mb, 512K x 8, 3.3V, 36ball TFBGA (6mmx8mm), Industrial Temp - Tray 67A magazzino
Min: 1
Mult.: 1

4 Mbit 512 k x 8 10 ns Parallel 3.6 V 2.7 V 70 mA - 40 C + 85 C SMD/SMT FBGA-36 Tray
Alliance Memory SRAM SRAM, 4Mb, 256K x 16, 3.3V, 44pin SOJ, Commercial Temp - Tube 56A magazzino
Min: 1
Mult.: 1

4 Mbit 256 k x 16 10 ns Parallel 3.6 V 3 V 170 mA 0 C + 70 C SMD/SMT SOJ-44 Tube
Renesas Electronics SRAM 16Kx16,3.3V DUAL- PORT RAM w/INT
56014.08.2026 previsto
Min: 1
Mult.: 1

256 kbit 16 k x 16 25 ns Parallel 3.6 V 3 V 185 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray

ISSI SRAM 32Mb, QUADRAM, 2.7V-3.6V, 133MHz, 24-ball TFBGA, RoHS 2A magazzino
Min: 1
Mult.: 1

32 Mbit 8 M x 4 7 ns 133 MHz SPI 3.6 V 2.7 V 20 mA - 40 C + 85 C SMD/SMT TFBGA-24

ISSI SRAM 2Mb 128Kx16 10ns Async SRAM 3.3v 120A magazzino
Min: 1
Mult.: 1

2 Mbit 128 k x 16 10 ns Parallel 3.6 V 3.135 V 65 mA - 40 C + 85 C SMD/SMT TSOP-44 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 36M
151In ordine
Min: 1
Mult.: 1

36 Mbit 1 M x 36 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 250 mA, 305 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM NBT SRAMs, 9Mb, x32, 150MHz, Commercial Temp
41525.08.2026 previsto
Min: 1
Mult.: 1

9 Mbit 256 k x 32 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 130 mA, 140 mA 0 C + 70 C SMD/SMT TQFP-100
Microchip Technology SRAM 16k, 3.0V EERAM IND
5 06531.08.2026 previsto
Min: 1
Mult.: 1

16 kbit 2 k x 8 400 ns 1 MHz I2C 3.6 V 2.7 V 400 uA - 40 C + 125 C SMD/SMT SOIC-8 Tube

ISSI SRAM 8Mb, QUADRAM, 1.65V-1.95V, 200MHz, 24-ball TFBGA, RoHS 262A magazzino
Min: 1
Mult.: 1

8 Mbit 2 M x 4 5 ns 200 MHz SPI 1.95 V 1.7 V 20 mA - 40 C + 85 C SMD/SMT TFBGA-24

ISSI SRAM 8Mb, QUADRAM, 2.7V-3.6V, 133MHz, 24-ball TFBGA, RoHS 12A magazzino
Min: 1
Mult.: 1

8 Mbit 2 M x 4 7 ns 133 MHz SPI 3.6 V 2.7 V 20 mA - 40 C + 85 C SMD/SMT TFBGA-24

ISSI SRAM 16Mb, QUADRAM, 2.7V-3.6V, 133MHz, 24-ball TFBGA, RoHS 262A magazzino
Min: 1
Mult.: 1

16 Mbit 4 M x 4 7 ns 133 MHz SPI 3.6 V 2.7 V 20 mA - 40 C + 85 C SMD/SMT TFBGA-24

ISSI SRAM 4Mb,High-Speed/Low Power,Async,256K x 16,10ns,3.3v,44 Pin TSOP II, RoHS 265A magazzino
Min: 1
Mult.: 1

4 Mbit 256 k x 16 10 ns Parallel 3.6 V 3.135 V 15 mA - 40 C + 85 C SMD/SMT TSOP-44 Tray

ISSI SRAM 4Mb,High-Speed/Low Power,Async,256K x 16,10ns,3.3v,44 Pin TSOP II, RoHS, Automotive temp 135A magazzino
Min: 1
Mult.: 1

4 Mbit 256 k x 16 12 ns Parallel 3.63 V 3.135 V 120 mA - 40 C + 125 C SMD/SMT TSOP-44 Tray