|
|
MOSFET HIGH POWER_LEGACY
- IPW60R160P6
- Infineon Technologies
-
1:
4.21 CHF
-
803A magazzino
|
Codice Mouser
726-IPW60R160P6
|
Infineon Technologies
|
MOSFET HIGH POWER_LEGACY
|
|
803A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
144 mOhms
|
20 V
|
3.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
176 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPL60R180P6AUMA1
- Infineon Technologies
-
1:
2.33 CHF
-
3 360A magazzino
|
Codice Mouser
726-IPL60R180P6AUMA1
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
3 360A magazzino
|
|
Min: 1
Mult.: 1
:
3 000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
22.4 A
|
162 mOhms
|
20 V
|
3.5 V
|
44 nC
|
- 40 C
|
+ 150 C
|
176 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPP60R099P6XKSA1
- Infineon Technologies
-
1:
5.37 CHF
-
714A magazzino
|
Codice Mouser
726-IPP60R099P6XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
714A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
89 mOhms
|
20 V
|
3.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET N-Ch 600V 10.6A DPAK-2
- IPD60R380P6ATMA1
- Infineon Technologies
-
1:
1.72 CHF
-
7 255A magazzino
|
Codice Mouser
726-IPD60R380P6ATMA1
|
Infineon Technologies
|
MOSFET N-Ch 600V 10.6A DPAK-2
|
|
7 255A magazzino
|
|
Min: 1
Mult.: 1
:
2 500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
10.6 A
|
380 mOhms
|
20 V
|
3.5 V
|
19 nC
|
- 55 C
|
+ 150 C
|
31 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_PRC/PRFRM
- IPA60R190P6
- Infineon Technologies
-
1:
2.64 CHF
-
704A magazzino
|
Codice Mouser
726-IPA60R190P6
|
Infineon Technologies
|
MOSFET HIGH POWER_PRC/PRFRM
|
|
704A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
20.2 A
|
190 Ohms
|
20 V
|
3.5 V
|
37 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_PRC/PRFRM
- IPP60R190P6
- Infineon Technologies
-
1:
2.93 CHF
-
604A magazzino
|
Codice Mouser
726-IPP60R190P6
|
Infineon Technologies
|
MOSFET HIGH POWER_PRC/PRFRM
|
|
604A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
20.2 A
|
190 mOhms
|
20 V
|
3.5 V
|
37 nC
|
- 55 C
|
+ 150 C
|
151 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET LOW POWER_PRC/PRFRM
- IPA60R600P6
- Infineon Technologies
-
1:
1.82 CHF
-
411A magazzino
|
Codice Mouser
726-IPA60R600P6
|
Infineon Technologies
|
MOSFET LOW POWER_PRC/PRFRM
|
|
411A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
7.3 A
|
540 mOhms
|
20 V
|
3.5 V
|
12 nC
|
- 55 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_PRC/PRFRM
- IPW60R190P6
- Infineon Technologies
-
1:
3.54 CHF
-
449A magazzino
|
Codice Mouser
726-IPW60R190P6
|
Infineon Technologies
|
MOSFET HIGH POWER_PRC/PRFRM
|
|
449A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
20.2 A
|
171 mOhms
|
20 V
|
3.5 V
|
37 nC
|
- 55 C
|
+ 150 C
|
151 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPA60R099P6
- Infineon Technologies
-
1:
4.94 CHF
-
377A magazzino
|
Codice Mouser
726-IPA60R099P6
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
377A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
89 mOhms
|
20 V
|
3.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET LOW POWER_LEGACY
- IPD60R600P6ATMA1
- Infineon Technologies
-
1:
1.43 CHF
-
1 971A magazzino
|
Codice Mouser
726-IPD60R600P6ATMA1
|
Infineon Technologies
|
MOSFET LOW POWER_LEGACY
|
|
1 971A magazzino
|
|
Min: 1
Mult.: 1
:
2 500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
7.3 A
|
600 mOhms
|
20 V
|
4 V
|
12 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET N-Ch 600V 7.7A TO220FP-3
- IPA60R280P6XKSA1
- Infineon Technologies
-
1:
2.33 CHF
-
982A magazzino
|
Codice Mouser
726-IPA60R280P6XKSA1
|
Infineon Technologies
|
MOSFET N-Ch 600V 7.7A TO220FP-3
|
|
982A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13.8 A
|
252 mOhms
|
20 V
|
3.5 V
|
25.5 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPA60R125P6XKSA1
- Infineon Technologies
-
1:
3.83 CHF
-
782A magazzino
|
Codice Mouser
726-IPA60R125P6XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
782A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
113 mOhms
|
20 V
|
3.5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_PRICE/PERFORM
- IPB60R160P6ATMA1
- Infineon Technologies
-
1:
3.41 CHF
-
5 007A magazzino
|
Codice Mouser
726-IPB60R160P6ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_PRICE/PERFORM
|
|
5 007A magazzino
|
|
Min: 1
Mult.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
160 mOhms
|
20 V
|
4 V
|
44 nC
|
- 55 C
|
+ 150 C
|
176 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPW60R041P6
- Infineon Technologies
-
1:
9.20 CHF
-
448A magazzino
|
Codice Mouser
726-IPW60R041P6
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
448A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
77.5 A
|
37 mOhms
|
20 V
|
3.5 V
|
170 nC
|
- 55 C
|
+ 150 C
|
481 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPA60R099P6XKSA1
- Infineon Technologies
-
1:
4.66 CHF
-
844A magazzino
|
Codice Mouser
726-IPA60R099P6XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
844A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
89 mOhms
|
20 V
|
3.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPW60R041P6FKSA1
- Infineon Technologies
-
1:
9.23 CHF
-
692A magazzino
-
1 200In ordine
|
Codice Mouser
726-IPW60R041P6FKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
692A magazzino
1 200In ordine
In ordine:
240 07.10.2026 previsto
960 08.04.2027 previsto
Tempo di consegna da parte della fabbrica:
35 settimane
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
77.5 A
|
37 mOhms
|
20 V
|
3.5 V
|
170 nC
|
- 55 C
|
+ 150 C
|
481 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPW60R099P6XKSA1
- Infineon Technologies
-
1:
4.87 CHF
-
1 073A magazzino
|
Codice Mouser
726-IPW60R099P6XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
1 073A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
89 mOhms
|
20 V
|
3.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET N-Ch 600V 7.7A TO220FP-3
- IPA60R280P6
- Infineon Technologies
-
1:
2.26 CHF
-
419A magazzino
|
Codice Mouser
726-IPA60R280P6
|
Infineon Technologies
|
MOSFET N-Ch 600V 7.7A TO220FP-3
|
|
419A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13.8 A
|
252 mOhms
|
20 V
|
3.5 V
|
25.5 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPP60R099P6
- Infineon Technologies
-
1:
5.37 CHF
-
486A magazzino
|
Codice Mouser
726-IPP60R099P6
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
486A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
89 mOhms
|
20 V
|
3.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPW60R070P6
- Infineon Technologies
-
1:
5.72 CHF
-
181A magazzino
|
Codice Mouser
726-IPW60R070P6
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
181A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
53.5 A
|
63 mOhms
|
20 V
|
3.5 V
|
100 nC
|
- 55 C
|
+ 150 C
|
391 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPW60R099P6
- Infineon Technologies
-
1:
5.01 CHF
-
122A magazzino
-
24001.10.2026 previsto
|
Codice Mouser
726-IPW60R099P6
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
122A magazzino
24001.10.2026 previsto
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
99 mOhms
|
20 V
|
3.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_LEGACY
- IPW60R160P6FKSA1
- Infineon Technologies
-
1:
3.94 CHF
-
343A magazzino
|
Codice Mouser
726-IPW60R160P6FKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_LEGACY
|
|
343A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
144 mOhms
|
20 V
|
3.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
176 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET N-Ch 600V 10.4A TO220FP-3
- IPA60R160P6
- Infineon Technologies
-
1:
3.13 CHF
-
30A magazzino
|
Codice Mouser
726-IPA60R160P6
|
Infineon Technologies
|
MOSFET N-Ch 600V 10.4A TO220FP-3
|
|
30A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
144 mOhms
|
20 V
|
3.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET N-Ch 600V 8.6A TO220FP-3
- IPA60R230P6XKSA1
- Infineon Technologies
-
1:
2.47 CHF
-
443A magazzino
|
Codice Mouser
726-IPA60R230P6XKSA1
|
Infineon Technologies
|
MOSFET N-Ch 600V 8.6A TO220FP-3
|
|
443A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
16.8 A
|
538 mOhms
|
20 V
|
4 V
|
31 nC
|
- 55 C
|
+ 150 C
|
33 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER PRICE/PERFORM
- IPP60R125P6XKSA1
- Infineon Technologies
-
1:
4.53 CHF
-
266A magazzino
|
Codice Mouser
726-IPP60R125P6XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER PRICE/PERFORM
|
|
266A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
113 mOhms
|
20 V
|
3.5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
219 W
|
Enhancement
|
CoolMOS
|
Tube
|
|