High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

Risultati: 70
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Descrizione Scheda dati Disponibilità Prezzi (CHF) Filtra i risultati nella tabella per prezzo unitario in base alla quantità.
Qtà RoHS Modello ECAD Stile di montaggio
Package/involucro
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Qualifica
Nome commerciale
onsemi MOSFET SiC 1700V/400MOSICFETG3TO263-7
Scheda dati
694A magazzino
80028.12.2026 previsto
Nastro continuo
9.37 CHF
6.63 CHF
4.91 CHF
4.65 CHF
Nastrati
4.65 CHF
MouseReel disponibile
Min: 1
Mult.: 1
Max.: 800
: 800
SMD/SMT D2PAK-7 1 Channel 1.7 kV 7.6 A 410 mOhms - 25 V, + 25 V 6 V 23.1 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi MOSFET SiC 750V/6MOSICFETG4TO247-4
Scheda dati
600A magazzino
44.24 CHF
31.56 CHF
Min: 1
Mult.: 1
Max.: 600
Through Hole TO-247-4 1 Channel 750 V 120 A 5.9 mOhms - 20 V, + 20 V 6 V 164 nC - 55 C + 175 C 714 W Enhancement SiC FET
onsemi MOSFET SiC 650V/40MOSICFETG3TO247-4
Scheda dati
3 278A magazzino
15.94 CHF
9.54 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/9MOSICFETG3TO247-4
Scheda dati
366A magazzino
57.51 CHF
45.38 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 120 A 11 mOhms - 20 V, + 20 V 4 V 234 nC - 55 C + 175 C 789 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/30MOSICFETG3TO220
Scheda dati
425A magazzino
1 00004.01.2027 previsto
21.41 CHF
17.14 CHF
14.82 CHF
13.28 CHF
Min: 1
Mult.: 1
Max.: 1 000
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 750V/18MOSICFETG4TO263-7
Scheda dati
278A magazzino
Nastro continuo
19.69 CHF
14.70 CHF
12.72 CHF
11.40 CHF
Nastrati
11.40 CHF
MouseReel disponibile
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET
onsemi MOSFET SiC 1200V/150MOSICFETG3TO2
Scheda dati
355A magazzino
Nastro continuo
10.28 CHF
5.90 CHF
5.44 CHF
5.15 CHF
Nastrati
5.15 CHF
MouseReel disponibile
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 17 A 150 mOhms - 25 V, + 25 V 4.4 V 25.7 nC - 55 C + 175 C 136 W Enhancement SiC FET
onsemi MOSFET SiC 1200V/40MOSICFETG3TO24
Scheda dati
381A magazzino
29.51 CHF
21.94 CHF
20.82 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO247-3
Scheda dati
679A magazzino
9.73 CHF
5.35 CHF
5.34 CHF
Min: 1
Mult.: 1
Max.: 300
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 750V/18MOSICFETG4TO247
Scheda dati
642A magazzino
11.24 CHF
6.46 CHF
6.40 CHF
Min: 1
Mult.: 1
Max.: 600
Through Hole TO-247-3 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 750V/60MOSICFETG4TO247-4
Scheda dati
562A magazzino
11.24 CHF
7.97 CHF
6.97 CHF
5.88 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/40MOSICFETG3TO247-3
Scheda dati
217A magazzino
23.65 CHF
17.65 CHF
17.59 CHF
15.77 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement SiC FET
onsemi MOSFET SiC 650V/30MOSICFETG3TO247-3
Scheda dati
513A magazzino
21.54 CHF
13.37 CHF
Min: 1
Mult.: 1
Max.: 300
Through Hole TO-247-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 750V/60MOSICFETG4TO247
Scheda dati
1 258A magazzino
12.32 CHF
7.43 CHF
6.33 CHF
5.82 CHF
Visualizza
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 750V/11MOSICFETG4TO263-7
Scheda dati
287A magazzino
Nastro continuo
23.81 CHF
18.86 CHF
17.59 CHF
15.90 CHF
Nastrati
15.90 CHF
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7L 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO247
Scheda dati
627A magazzino
9.91 CHF
5.67 CHF
5.26 CHF
5.04 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 12 V, + 12 V 6 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 750V/60MOSICFETG4TO263
Scheda dati
1 266A magazzino
Nastro continuo
6.34 CHF
3.43 CHF
3.39 CHF
3.27 CHF
Nastrati
3.27 CHF
2.85 CHF
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 25.8 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 128 W Enhancement SiC FET
onsemi MOSFET SiC 650V/30MOSICFETG3TO220-3
Scheda dati
902A magazzino
20.66 CHF
13.28 CHF
Min: 1
Mult.: 1
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 5 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/40MOSICFETG3TO247
Scheda dati
1 166A magazzino
12.28 CHF
9.31 CHF
8.79 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 54 A 42 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/40MOSICFETG3TO24
Scheda dati
610A magazzino
23.76 CHF
15.77 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO247-4
Scheda dati
583A magazzino
10.38 CHF
5.83 CHF
5.41 CHF
5.20 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/80MOSICFETG3TO24
Scheda dati
1 142A magazzino
17.04 CHF
10.39 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO220
Scheda dati
475A magazzino
9.65 CHF
5.56 CHF
5.15 CHF
4.79 CHF
Min: 1
Mult.: 1
Through Hole TO-220-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 750V/33MOSICFETG4TO263
Scheda dati
486A magazzino
Nastro continuo
12.24 CHF
7.17 CHF
6.79 CHF
Nastrati
6.79 CHF
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 44 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 197 W Enhancement SiC FET
onsemi MOSFET SiC 750V/44MOSICFETG4TO263
Scheda dati
648A magazzino
Nastro continuo
11.30 CHF
6.47 CHF
6.12 CHF
Nastrati
6.12 CHF
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 35.6 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 181 W Enhancement SiC FET