MOSFET di potenza SiC AEC-Q101

I MOSFET di potenza SiC AEC-Q101 di ROHM Semiconductor sono ideali per alimentatori automobilistici e a commutazione. I MOSFET di potenza SiC possono essere utilizzati per aumentare la frequenza di commutazione, riducendo i volumi di condensatori, reattori e altri componenti richiesti. I MOSFET di potenza SiC AEC-Q101 offrono eccellenti riduzioni di dimensioni e peso all’interno di vari sistemi di azionamento, come inverter e convertitori CC-CC nei veicoli.

Risultati: 34
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (CHF) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Stile di montaggio Package/involucro Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Qualifica
ROHM Semiconductor MOSFET SiC 1200V 55A 262W SIC 40mOhm TO-247N
460A magazzino
42.21 CHF
35.76 CHF
34.97 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor MOSFET SiC 650V 70A 262W SIC 30mOhm TO-247N
366A magazzino
39.85 CHF
33.09 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor MOSFET SiC 1200V 95A 427W SIC 22mOhm TO-247N
199A magazzino
104.87 CHF
99.55 CHF
Min: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor MOSFET SiC 1200V 24A 134W SIC 105mOhm TO-247N
1 619A magazzino
17.25 CHF
13.40 CHF
13.00 CHF
12.61 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor MOSFET SiC TO247 1.2KV 43A N-CH SIC 453A magazzino
14.46 CHF
10.38 CHF
10.33 CHF
Min: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor MOSFET SiC 650V 118A 427W SIC 17mOhm TO-247N
351A magazzino
101.72 CHF
94.08 CHF
Min: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 650 V 118 A 22.1 mOhms - 4 V, + 22 V 5.6 V 172 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor MOSFET SiC 1200V 72A 339W SIC 30mOhm TO-247N
345A magazzino
59.43 CHF
53.52 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement AEC-Q101
ROHM Semiconductor MOSFET SiC TO247 1.2KV 26A N-CH SIC 701A magazzino
10.59 CHF
6.94 CHF
6.46 CHF
6.43 CHF
6.38 CHF
Min: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor MOSFET SiC TO263 750V 51A N-CH SIC 1 901A magazzino
Nastro continuo
17.15 CHF
11.07 CHF
10.96 CHF
Nastrati
10.48 CHF
Min: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor MOSFET SiC 650V 30A 134W SIC 80mOhm TO-247N
366A magazzino
14.98 CHF
11.43 CHF
11.15 CHF
Min: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor MOSFET SiC 1200V 31A 165W SIC 80mOhm TO-247N
171A magazzino
21.05 CHF
15.35 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 2.7 V 60 nC - 55 C + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor MOSFET SiC TO247 750V 34A N-CH SIC 311A magazzino
11.07 CHF
6.57 CHF
6.41 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor MOSFET SiC TO247 750V 56A N-CH SIC 787A magazzino
16.65 CHF
10.48 CHF
Min: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor MOSFET SiC TO247 1.2KV 26A N-CH SIC 499A magazzino
11.17 CHF
6.86 CHF
6.69 CHF
6.58 CHF
Min: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor MOSFET SiC 650V 21A 103W SIC 120mOhm TO-247N
450A magazzino
7.69 CHF
5.17 CHF
4.82 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor MOSFET SiC TO247 1.2KV 43A N-CH SIC 654A magazzino
16.14 CHF
10.65 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor MOSFET SiC TO263 750V 31A N-CH SIC 301A magazzino
Nastro continuo
10.88 CHF
8.33 CHF
7.19 CHF
6.72 CHF
Nastrati
6.41 CHF
Min: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement AEC-Q101
ROHM Semiconductor MOSFET SiC TO263 1.2KV 24A N-CH SIC 1 201A magazzino
Nastro continuo
11.94 CHF
6.95 CHF
6.90 CHF
Nastrati
6.58 CHF
Min: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 24 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 93 W Enhancement AEC-Q101
ROHM Semiconductor MOSFET SiC 650V 39A 165W SIC 60mOhm TO-247N
428A magazzino
20.42 CHF
14.57 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor MOSFET SiC TO247 750V 34A N-CH SIC 810A magazzino
10.98 CHF
6.70 CHF
6.41 CHF
Min: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor MOSFET SiC TO247 750V 34A N-CH SIC 750A magazzino
10.34 CHF
6.53 CHF
6.22 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor MOSFET SiC TO247 1.2KV 43A N-CH SIC 99A magazzino
16.88 CHF
10.65 CHF
Min: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor MOSFET SiC TO263 750V 51A N-CH SIC 547A magazzino
Nastro continuo
13.97 CHF
8.51 CHF
8.50 CHF
Nastrati
8.05 CHF
Min: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor MOSFET SiC TO263 750V 31A N-CH SIC 1 996A magazzino
Nastro continuo
9.80 CHF
5.51 CHF
5.37 CHF
Nastrati
5.08 CHF
Min: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement
ROHM Semiconductor MOSFET SiC TO263 1.2KV 24A N-CH SIC 740A magazzino
Nastro continuo
9.75 CHF
5.49 CHF
5.37 CHF
5.08 CHF
Nastrati
5.05 CHF
Min: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 24 A 62 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 93 W Enhancement