MOSFET EliteSiC M1

MOSFET EliteSiC M1 di onsemi  con tensione   nominale di 1200 V e 1700 V. I MOSFET M1 di onsemi  sono progettati per soddisfare i requisiti delle applicazioni ad alta potenza che richiedono affidabilità ed efficienza. I MOSFET EliteSiC M1 sono disponibili in varie opzioni di package, tra cui D2PAK7, TO-247-3LD, TO-247-4LD e die nude.

Risultati: 27
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (CHF) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Stile di montaggio Package/involucro Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Qualifica Nome commerciale

onsemi MOSFET SiC 20MW 1200V 865A magazzino
42.15 CHF
32.40 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 103 A 28 mOhms - 15 V, + 25 V 4.3 V 203 nC - 55 C + 175 C 535 W Enhancement AEC-Q101 EliteSiC

onsemi MOSFET SiC SIC MOS TO247-4L 40MOHM 1200V 1 390A magazzino
15.87 CHF
11.84 CHF
Min: 1
Mult.: 1
Max.: 450
Through Hole TO-247-4 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC

onsemi MOSFET SiC SIC MOS TO247-3L 160MOHM 1200V 2 390A magazzino
10.90 CHF
6.07 CHF
5.84 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC
onsemi MOSFET SiC SIC MOS D2PAK-7L 40MOHM 1200V 947A magazzino
Nastro continuo
16.28 CHF
12.16 CHF
11.91 CHF
Nastrati
11.91 CHF
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 357 W Enhancement EliteSiC

onsemi MOSFET SiC SIC 1700V MOS 28MO IN TO247-4L 750A magazzino
29.03 CHF
22.61 CHF
Min: 1
Mult.: 1
Max.: 450
Through Hole TO-247-4 1 Channel 1.7 kV 81 A 40 mOhms - 15 V, + 25 V 4.3 V 200 nC - 55 C + 175 C 535 W Enhancement EliteSiC
onsemi MOSFET SiC SIC MOS D2PAK-7L 160MOHM 1200V 1 830A magazzino
Nastro continuo
7.36 CHF
4.41 CHF
4.08 CHF
3.88 CHF
Nastrati
3.88 CHF
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 19.5 A 224 mOhms - 15 V, + 25 V 4.3 V 33.8 nC - 55 C + 175 C 136 W Enhancement EliteSiC

onsemi MOSFET SiC SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART 1 733A magazzino
6.10 CHF
4.26 CHF
4.12 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 17.3 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC

onsemi MOSFET SiC SIC MOS TO247-3L 80MOHM 1200V 1 135A magazzino
11.14 CHF
6.22 CHF
Min: 1
Mult.: 1
Max.: 450
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 178 W Enhancement EliteSiC

onsemi MOSFET SiC SIC MOS TO247-4L 80MOHM 1200V 660A magazzino
10.25 CHF
5.66 CHF
5.38 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 29 A 80 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 170 W Enhancement EliteSiC
onsemi MOSFET SiC SIC MOS D2PAK-7L 80MOHM 1200V 1 930A magazzino
Nastro continuo
9.77 CHF
5.49 CHF
5.35 CHF
5.06 CHF
Nastrati
5.06 CHF
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 30 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 179 W Enhancement AEC-Q101 EliteSiC

onsemi MOSFET SiC SIC MOS 80MW 1200 V 80 mOhms 44A 1 182A magazzino
13.57 CHF
8.69 CHF
8.31 CHF
8.12 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 178 W Enhancement AEC-Q101 EliteSiC

onsemi MOSFET SiC SIC MOS TO247-3L 40MOHM 1200V 205A magazzino
22.16 CHF
14.34 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi MOSFET SiC SIC MOS TO247-4L 1200V 160MOHM AUTO PART 181A magazzino
11.53 CHF
6.14 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 17.3 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC

onsemi MOSFET SiC SIC MOS TO247-4L 20MOHM 1200V 266A magazzino
38.82 CHF
33.02 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 102 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 510 W Enhancement EliteSiC

onsemi MOSFET SiC SIC MOS TO247-4L 1200V 40MOHM AUTO PART 224A magazzino
22.86 CHF
15.10 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC
onsemi MOSFET SiC SIC MOS D2PAK-7L 40MOHM 1200V 53A magazzino
Nastro continuo
23.50 CHF
17.62 CHF
16.28 CHF
14.59 CHF
Nastrati
14.59 CHF
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 357 W Enhancement EliteSiC
onsemi MOSFET SiC SIC MOS 20MW 1200V 2 163A magazzino
Nastro continuo
31.37 CHF
23.72 CHF
23.71 CHF
22.45 CHF
Nastrati
22.45 CHF
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 98 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 468 W Enhancement EliteSiC

onsemi MOSFET SiC 20MW 1200V 755A magazzino
31.11 CHF
21.94 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 103 A 28 mOhms - 15 V, + 25 V 4.3 V 203 nC - 55 C + 175 C 535 W Enhancement EliteSiC
onsemi MOSFET SiC SIC MOS D2PAK-7L 80MOHM 1200V 426A magazzino
Nastro continuo
11.01 CHF
6.55 CHF
6.20 CHF
Nastrati
6.20 CHF
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 30 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 179 W Enhancement EliteSiC

onsemi MOSFET SiC SIC MOS TO247-4L 20MOHM 1200V 187A magazzino
27.64 CHF
22.35 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 102 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 510 W Enhancement EliteSiC

onsemi MOSFET SiC SIC MOS TO247-3L 40MOHM 1200V 363A magazzino
45030.10.2026 previsto
18.79 CHF
11.84 CHF
Min: 1
Mult.: 1
Max.: 450
Through Hole TO-247-3 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi MOSFET SiC SIC MOS TO247-3L 160MOHM 1200V 477A magazzino
45002.08.2027 previsto
8.09 CHF
4.44 CHF
4.09 CHF
Min: 1
Mult.: 1
Max.: 450
Through Hole TO-247-3 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC
onsemi MOSFET SiC SIC MOS D2PAK-7L 20MOHM 1 84A magazzino
Nastro continuo
44.58 CHF
36.18 CHF
32.32 CHF
Nastrati
32.32 CHF
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 98 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 468 W Enhancement AEC-Q101 EliteSiC
onsemi MOSFET SiC SIC MOS D2PAK-7L 160MOHM 1200V 390A magazzino
1 600In ordine
Nastro continuo
10.54 CHF
7.06 CHF
6.26 CHF
5.55 CHF
Nastrati
5.55 CHF
Min: 1
Mult.: 1
Max.: 800
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 19.5 A 224 mOhms - 15 V, + 25 V 4.3 V 33.8 nC - 55 C + 175 C 136 W Enhancement AEC-Q101 EliteSiC

onsemi MOSFET SiC SIC MOS TO247-4L 80MOHM 1200V 183A magazzino
10.52 CHF
5.84 CHF
5.58 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 29 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 170 W Enhancement EliteSiC