Risultati: 27
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (CHF) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Nome commerciale Confezione
Infineon Technologies MOSFET IFX FET >80 - 100V 4 330A magazzino
Min: 1
Mult.: 1
: 6 000
Si SMD/SMT WHTFN-9 N-Channel 1 Channel 100 V 13 A 6.5 mOhms - 20 V, 20 V 3.8 V 43 nC - 55 C + 175 C 2.5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 3 245A magazzino
Min: 1
Mult.: 1
: 6 000
Si SMD/SMT WHSON-8 N-Channel 1 Channel 80 V 16 A 5 mOhms - 20 V, 20 V 3.8 V 44 nC - 55 C + 175 C 2.5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 1 478A magazzino
Min: 1
Mult.: 1
: 2 000
Si SMD/SMT N-Channel 1 Channel 100 V 248 A 2.6 mOhms - 20 V, 20 V 3.8 V 89 nC - 55 C + 175 C 313 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 5 096A magazzino
Min: 1
Mult.: 1
: 5 000

Si SMD/SMT N-Channel 1 Channel 100 V 85 A 6.5 mOhms - 20 V, 20 V 3.8 V 34 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 470A magazzino
Min: 1
Mult.: 1
: 2 000
Si SMD/SMT N-Channel 1 Channel 80 V 290 A 1.9 Ohms - 20 V, 20 V 3.8 V 94 nC - 55 C + 175 C 313 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 5 power MOSFET 100 V in a TO-220 package 913A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 120 A 2.3 mOhms - 20 V, 20 V 3.8 V 168 nC - 55 C + 175 C 375 W Enhancement OptiMOS Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 3 053A magazzino
Min: 1
Mult.: 1
: 5 000

Si SMD/SMT TTFN-9 N-Channel 1 Channel 100 V 273 A 2.05 mOhms - 20 V, 20 V 3.8 V 107 nC - 55 C + 175 C 333 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 2 778A magazzino
Min: 1
Mult.: 1
: 5 000

Si SMD/SMT TTFN-9 N-Channel 1 Channel 80 V 99 A 4.6 mOhms - 20 V, 20 V 2.3 V 38 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 6 019A magazzino
Min: 1
Mult.: 1
: 5 000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 80 V 198 A 2.55 mOhms - 20 V, 20 V 3.9 V - 55 C + 175 C 217 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V 2 382A magazzino
Min: 1
Mult.: 1
: 2 000

Si SMD/SMT N-Channel 1 Channel 80 V 333 A 1.3 mOhms - 20 V, 20 V 4.1 V 158 nC - 55 C + 150 C 278 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V 101A magazzino
10 000In ordine
Min: 1
Mult.: 1
: 5 000

Si SMD/SMT TSON-8 N-Channel 1 Channel 80 V 99 A 4.6 mOhms - 20 V, 20 V 2.3 V 38 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 434A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 44 A 8.3 mOhms - 20 V, 20 V 3.8 V 30 nC - 55 C + 175 C 36 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 54A magazzino
3 600In ordine
Min: 1
Mult.: 1
: 1 800

Si SMD/SMT HDSOP-16 N-Channel 1 Channel 100 V 365 A 1.4 mOhms - 20 V, 20 V 3.8 V 211 nC - 55 C + 175 C 3.8 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V 993A magazzino
6 00019.11.2026 previsto
Min: 1
Mult.: 1
: 6 000
Si SMD/SMT WHTFN-9 N-Channel 1 Channel 80 V 16 A 5 mOhms - 20 V, 20 V 3.8 V 44 nC - 55 C + 175 C 2.5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 107A magazzino
6 00025.02.2027 previsto
Min: 1
Mult.: 1
: 6 000
Si SMD/SMT WHSON-8 N-Channel 1 Channel 100 V 13 A 6.5 mOhms - 20 V, 20 V 3.8 V 43 nC - 55 C + 175 C 2.5 W Enhancement Reel, Cut Tape
Infineon Technologies IPP034N08N5XKSA1
Infineon Technologies MOSFET IFX FET > 60-80V 615A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 3.4 mOhms - 20 V, 20 V 3.8 V 69 nC - 55 C + 175 C 167 W Enhancement Tube
Infineon Technologies MOSFET IFX FET > 60-80V
7 255In ordine
Min: 1
Mult.: 1
: 1 800

Si SMD/SMT HDSOP-16 N-Channel 1 Channel 80 V 408 A 1.1 mOhms - 20 V, 20 V 3.8 V 223 nC - 55 C + 175 C 3.8 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 103A magazzino
Min: 1
Mult.: 1
: 5 000

Si SMD/SMT N-Channel 1 Channel 80 V 101 A 5 mOhms - 20 V, 20 V 3.8 V 35 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V 92A magazzino
Min: 1
Mult.: 1
: 5 000

Si SMD/SMT N-Channel 1 Channel 80 V 101 A 5 mOhms - 20 V, 20 V 3.8 V 35 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V
11 970In ordine
Min: 1
Mult.: 1
: 6 000

Si SMD/SMT WHSON-8 N-Channel 1 Channel 80 V 99 A - 20 V, 20 V 2.3 V - 55 C + 175 C Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V
11 751In ordine
Min: 1
Mult.: 1
: 3 000

Si SMD/SMT TFN-10 N-Channel 2 Channel 100 V 139 A 4 mOhms - 20 V, 20 V 3.8 V 52 nC - 55 C + 175 C 167 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V
5 00029.10.2026 previsto
Min: 1
Mult.: 1
: 5 000

Si SMD/SMT TTFN-9 N-Channel 1 Channel 80 V 323 A 1.57 mOhms - 20 V, 20 V 3.8 V 106 nC - 55 C + 175 C 333 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V
5 97910.09.2026 previsto
Min: 1
Mult.: 1
: 6 000

Si SMD/SMT WHSON-8 N-Channel 1 Channel 80 V 99 A - 20 V, 20 V 2.3 V - 55 C + 175 C Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V
10 00027.08.2026 previsto
Min: 1
Mult.: 1
: 5 000

Si SMD/SMT N-Channel 1 Channel 100 V 85 A 6.5 mOhms - 20 V, 20 V 3.8 V 34 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape
Infineon Technologies IPP020N08N5XKSA1
Infineon Technologies MOSFET IFX FET > 60-80V Tempo di consegna, se non a magazzino 8 settimane
Min: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 2 mOhms - 20 V, 20 V 3.8 V 178 nC - 55 C + 175 C 375 W Enhancement Tube