Infineon Technologies OptiMOS™ 5 Leistungs-MOSFETs

Infineon OptiMOS™ 5 Leistungs-MOSFETs sind dazu konzipiert, den Anforderungen nach verbesserter Systemeffizienz bei reduzierten Systemkosten zu entsprechen. Diese Geräte weisen niedrigeren RDS(on) und Gütefaktor (RDS(on) x Qg) auf, verglichen mit alternativen Geräten. Sie wurden unter Verwendung einer neuen Siliziumtechnologie entwickelt und sind optimiert, um den Anforderungen an Energieeffizienz und Leistungsdichte zu entsprechen und diese zu übertreffen. Zu den typischen Anwendungsbereichen dieser MOSFETs gehören Server, Datenkommunikation und Client-Anwendungen in der Computerbranche. Sie können außerdem in der Synchrongleichrichterschaltung bei Schaltnetzteilen(SMPS) sowie als Motorsteuerung, Mikro-Solar-Wechselrichter und schnell schaltenden DC-DC-Wandler-Anwendungen genutzt werden.

Ressourcen

25V and 30V Power MOSFETs

Infineon OptiMOS 5 25V and 30V Power MOSFETs offer benchmark solutions, enabling the highest power density and energy efficiency in both standby and full operation. These MOSFETs are based on silicon technology and are optimized to meet and exceed energy-efficiency and power density requirements.

These are based on the tightened next-generation voltage regulation standards in DC/DC applications. OptiMOS 5 products address a broad range of voltage regulation applications in the computing industry. This includes server, datacom, and client applications, with a focus on Intel's VR and IMVP platforms.

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Features

Superior on-state resistance
Benchmark switching performance (lowest Figure of Merits R_on x Q_gand R_on x Q_gd)
RoHS-compliant and halogen-free
Optimized EMI behavior (integrated damping network)
Highest efficiency
Highest power density with S3O8 or Power Block package
Reduction of overall system costs
Operation at high switching frequency

Applications

Desktops and servers
Single-phase and multiphase PoL
CPU/GPU voltage regulation in notebooks
High-power-density voltage regulators
O-rings
E-fuses

System Efficiency

40V and 60V Power MOSFETs

Infineon OptiMOS 5 40V and 60V Power MOSFETs enable AC-DC designers to meet the challenge of improving system efficiency and power density while reducing system costs. Infineon’s OptiMOS 5 power MOSFETs in the 40V and 60V range feature 15 percent lower R_DS(on) and 31 percent lower figure of merit (R_DS(on) x Q_g) compared to alternative devices, and are the perfect answer to these challenges.

These devices include a wide variety of packages such as DPAK, D²PAK, D²PAK 7-pin, PQFN 2x2, PQFN 3.3x3.3, SuperSO8 5x6, TO-220, TO-220 FullPAK, TOLL, TOLG, and TOLT to meet design and space requirements.

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Features

Highest system efficiency
Low switching and conduction losses
Very low-voltage overshoot
Available with a T_jmax of 150°C and 175°C
Less paralleling required
Increased power density

Applications

Photovoltaic
Motor control

RDS(on) Comparisons

80V and 100V Power MOSFETs

Infineon OptiMOS 5 80V and 100V Power MOSFETs are industrial-grade devices designed for synchronous rectification in telecom and server power supply applications. These devices are also ideal for other applications such as solar, low-voltage drives, and laptop adapters.

With a broad package portfolio, the OptiMOS™ 5 family of power MOSFETs offers the industry’s lowest RDS(on), as low as 2.7mΩ in the SuperSO8 package, providing the highest levels of power density and efficiency.

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Features

Synchronous rectification optimized
High switching frequency
Low output capacitance
Low R_DS(on)

Applications

Server power supply units (PSU)
Light electric vehicle solutions
AC-DC power conversion for telecommunications infrastructure
Power adapters and chargers
Photovoltaic
Motor control

Performance Comparisons

150V Power MOSFETs

Infineon OptiMOS™ 5 150V Power MOSFETs are suitable for low-voltage drives, such as forklifts, e-scooters, telecom, and solar applications. The 150V MOSFETs offer an up to 25 percent reduction in R_DS(on) and Q_rr without compromising FOMgd. This reduces design effort and optimizes system efficiency. The ultralow reverse recovery charge (lowest Q_rr in SuperSO8 = 26nC) increases commutation ruggedness.

The OptiMOS 5 150V technology enables smaller best-in-class SuperSO8 (PQFN 5x6) package devices to replace TO-220 alternatives. The switch provides increased power density and lower voltage overshoot (VDS) due to reduced package inductance.

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Features