Risultati: 37
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (CHF) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Nome commerciale Confezione
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM 822A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30 A 113 mOhms - 20 V, 20 V 3.5 V 56 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_LEGACY 594A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 15 A 340 mOhms - 20 V, 20 V 3.5 V 94 nC - 55 C + 150 C 35 W Enhancement Tube
Infineon Technologies MOSFET N-Ch 800V 1.9A DPAK-2 8 652A magazzino
Min: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 1.9 A 2.8 Ohms - 30 V, 30 V 3 V 12 nC - 55 C + 150 C 42 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_LEGACY 3 646A magazzino
Min: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 6 A 900 mOhms - 20 V, 20 V 2.1 V 31 nC - 55 C + 150 C 83 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 1 669A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 12.5 A 300 mOhms - 30 V, 30 V 2.5 V 16.4 nC - 40 C + 150 C 26.5 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS C3 27A magazzino
1 00031.07.2026 previsto
Min: 1
Mult.: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 11 A 380 mOhms - 20 V, 20 V 2.1 V 45 nC - 55 C + 150 C 125 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 20.7A TO220-3 1 446A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20.7 A 190 mOhms - 20 V, 20 V 2.1 V 87 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 5 473A magazzino
7 50003.08.2026 previsto
Min: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 18.1 A 280 mOhms - 20 V, 20 V 3 V 32.6 nC - 55 C + 150 C 119 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET N-Ch 850V 54.9A TO247-3 451A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 54.9 A 77 mOhms - 20 V, 20 V 2.1 V 288 nC - 55 C + 150 C 500 W Enhancement Tube

Infineon Technologies MOSFET N-Ch 850V 54.9A TO247-3 284A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 54.9 A 77 mOhms - 20 V, 20 V 2.1 V 288 nC - 55 C + 150 C 500 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_LEGACY 197A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 36 A 120 mOhms - 20 V, 20 V 3.5 V 270 nC - 55 C + 150 C 417 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM 854A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 2 869A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 12.5 A 300 mOhms - 16 V, 16 V 2.5 V 16.4 nC - 40 C + 150 C 26.5 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 3 200A magazzino
Min: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 12 A 214 mOhms - 20 V, 20 V 3 V 18 nC - 40 C + 150 C 53 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 12 751A magazzino
Min: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6 A 600 mOhms - 20 V, 20 V 3.5 V 9 nC - 40 C + 150 C 30 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 4 823A magazzino
Min: 1
Mult.: 1
: 3 000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 700 V 8.5 A 490 mOhms - 16 V, 16 V 2.5 V 10.5 nC - 40 C + 150 C 6.9 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 922A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 11.1 A 1.17 Ohms - 20 V, 20 V 3 V 18.7 nC - 40 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_LEGACY 1 194A magazzino
Min: 1
Mult.: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 900 V 15 A 340 mOhms - 20 V, 20 V 3.5 V 94 nC - 55 C + 150 C 208 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_LEGACY 304A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 1 A 450 mOhms - 20 V, 20 V 3 V 85 nC - 55 C + 150 C 34 W Enhancement Tube
Infineon Technologies MOSFET N-Ch 500V 18.5A TO220-3
99527.07.2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 24.8 A 170 mOhms - 20 V, 20 V 2.5 V 47.2 nC - 55 C + 150 C 152 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 10.3A TO220FP-3 63A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 14.7 A 890 mOhms - 20 V, 20 V 3 V 32 nC - 40 C + 150 C 31 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3 435A magazzino
1 68001.04.2027 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20.7 A 190 mOhms - 20 V, 20 V 2.1 V 87 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 10.4A TO220FP-3 8A magazzino
1 00001.10.2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 770A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 145 mOhms - 20 V, 20 V 3 V 25 nC - 40 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 8.6A TO220FP-3 460A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 16.8 A 538 mOhms - 20 V, 20 V 4 V 31 nC - 55 C + 150 C 33 W Enhancement CoolMOS Tube