IGBTs

Ergebnisse: 27
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Menge RoHS ECAD Model Technologie
Verpackung/Gehäuse
Montageart
Konfiguration
Kollektor-Emitterspannung VCEO max.
Sättigungsspannung Kollektor-Emitter
Maximale Gate-Emitter-Spannung
Kollektorgleichstrom bei 25 C
Pd - Verlustleistung
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Serie
Qualifikation
Verpackung
STMicroelectronics IGBTs Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Datenblatt
531Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 120 A 469 W - 55 C + 175 C STGWA80H65FB Tube
onsemi IGBTs 650V FS Trench IGBT Gen3
Datenblatt
296Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.5 V - 20 V, 20 V 240 A 882 W - 55 C + 175 C FGY120T65S_F085 AEC-Q101 Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long
Datenblatt
662Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 86 A 272 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBTs Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT
Datenblatt
597Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole 650 V 1.65 V - 20 V, 20 V 120 A 535 W - 55 C + 175 C AEC-Q100 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Datenblatt
1 693Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGW25H120DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Datenblatt
659Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGW25H120F2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Datenblatt
1 828Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120DF2 Tube
STMicroelectronics IGBTs 600V 40A trench gate field-stop IGBT
Datenblatt
1 402Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.8 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGW40H65DFB Tube
STMicroelectronics IGBTs Trench gte FieldStop IGBT 650V 80A
Datenblatt
4 575Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 120 A 469 W - 55 C + 175 C STGW80H65DFB Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Datenblatt
1 218Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
Datenblatt
610Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 30 A 259 W - 55 C + 175 C STGW15H120DF2 Tube
STMicroelectronics IGBTs 1250V 25A trench gate field-stop IGBT
Datenblatt
560Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.25 kV 2.65 V - 20 V, 20 V 60 A 375 W - 55 C + 175 C STGW28IH125DF Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 30 A high speed HB series IGBT
Datenblatt
90Auf Lager
600erwartet ab 24.08.2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.75 V - 20 V, 20 V 30 A 260 W - 55 C + 175 C STGW30H65FB Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Datenblatt
452Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120F2 Tube
STMicroelectronics IGBTs 600V 40A trench gate field-stop IGBT
Datenblatt
161Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.6 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGW40H60DLFB Tube
STMicroelectronics IGBTs 600V 60A trench gate field-stop IGBT
Datenblatt
6Auf Lager
1 200erwartet ab 13.02.2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60H65DFB Tube
STMicroelectronics IGBTs 600V 60A Trench Gate 1.8V Vce IGBT
Datenblatt
268Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60V60F Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
Datenblatt
Produkt-Kommentare
467Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 30 A 283 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long
Datenblatt
406Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 50 A 167 W - 55 C + 175 C Tube
STMicroelectronics IGBTs 600V 20A Hi Spd TrenchGate FieldStop
Datenblatt
292Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.8 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGW20V60F Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 20 A, high speed HB2 series IGBT in a TO-247 long
Datenblatt
493Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBTs 600V 20A Hi Spd TrenchGate FieldStop
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 14 Wochen
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 2 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGW20H60DF Tube
STMicroelectronics IGBTs 1250V 20A trench gate field-stop IGBT
Datenblatt
Vorlaufzeit 14 Wochen
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.25 kV 2.55 V - 20 V, 20 V 40 A 259 W - 55 C + 175 C STGW20IH125DF Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Datenblatt
599erwartet ab 14.05.2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 326 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
Datenblatt
Vorlaufzeit 14 Wochen
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 72 A 230 W - 55 C + 175 C Tube