|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMBG65R057M1HXTMA1
- Infineon Technologies
-
1:
CHF 6.45
-
3 980Auf Lager
|
Mouser-Teilenr.
726-IMBG65R057M1HXTM
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
3 980Auf Lager
|
|
|
CHF 6.45
|
|
|
CHF 4.38
|
|
|
CHF 3.38
|
|
|
CHF 3.37
|
|
|
CHF 2.86
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
74 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
28 nC
|
- 55 C
|
+ 175 C
|
161 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMBG65R260M1HXTMA1
- Infineon Technologies
-
1:
CHF 3.49
-
865Auf Lager
|
Mouser-Teilenr.
726-IMBG65R260M1HXTM
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
865Auf Lager
|
|
|
CHF 3.49
|
|
|
CHF 2.30
|
|
|
CHF 1.62
|
|
|
CHF 1.48
|
|
|
CHF 1.26
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
6 A
|
346 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 175 C
|
65 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMBG65R163M1HXTMA1
- Infineon Technologies
-
1:
CHF 4.03
-
739Auf Lager
|
Mouser-Teilenr.
726-IMBG65R163M1HXTM
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
739Auf Lager
|
|
|
CHF 4.03
|
|
|
CHF 2.59
|
|
|
CHF 1.91
|
|
|
CHF 1.81
|
|
|
CHF 1.54
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
17 A
|
217 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
27 nC
|
- 55 C
|
+ 175 C
|
85 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMBG65R107M1HXTMA1
- Infineon Technologies
-
1:
CHF 4.72
-
753Auf Lager
|
Mouser-Teilenr.
726-IMBG65R107M1HXTM
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
753Auf Lager
|
|
|
CHF 4.72
|
|
|
CHF 2.72
|
|
|
CHF 2.44
|
|
|
CHF 2.43
|
|
|
CHF 2.05
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
141 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
35 nC
|
- 55 C
|
+ 175 C
|
110 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMBG65R022M1HXTMA1
- Infineon Technologies
-
1:
CHF 12.15
-
783Auf Lager
|
Mouser-Teilenr.
726-IMBG65R022M1HXTM
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
783Auf Lager
|
|
|
CHF 12.15
|
|
|
CHF 8.55
|
|
|
CHF 7.73
|
|
|
CHF 7.72
|
|
|
CHF 7.27
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
64 A
|
30 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
67 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMBG65R083M1HXTMA1
- Infineon Technologies
-
1:
CHF 5.18
-
466Auf Lager
|
Mouser-Teilenr.
726-IMBG65R083M1HXTM
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
466Auf Lager
|
|
|
CHF 5.18
|
|
|
CHF 3.28
|
|
|
CHF 2.71
|
|
|
CHF 2.69
|
|
|
CHF 2.29
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
111 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
44 nC
|
- 55 C
|
+ 175 C
|
126 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMBG65R030M1HXTMA1
- Infineon Technologies
-
1:
CHF 9.38
-
1 477Auf Lager
|
Mouser-Teilenr.
726-IMBG65R030M1HXTM
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
1 477Auf Lager
|
|
|
CHF 9.38
|
|
|
CHF 6.36
|
|
|
CHF 5.53
|
|
|
CHF 4.70
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
63 A
|
42 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
49 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMZA65R107M1HXKSA1
- Infineon Technologies
-
1:
CHF 3.69
-
444Auf Lager
|
Mouser-Teilenr.
726-IMZA65R107M1HXKS
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
444Auf Lager
|
|
|
CHF 3.69
|
|
|
CHF 2.66
|
|
|
CHF 2.40
|
|
|
CHF 2.25
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
142 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
15 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMBG65R039M1HXTMA1
- Infineon Technologies
-
1:
CHF 6.28
-
692Auf Lager
|
Mouser-Teilenr.
726-IMBG65R039M1HXTM
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
692Auf Lager
|
|
|
CHF 6.28
|
|
|
CHF 4.81
|
|
|
CHF 4.33
|
|
|
CHF 4.31
|
|
|
CHF 3.67
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
54 A
|
51 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
41 nC
|
- 55 C
|
+ 175 C
|
211 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMBG65R048M1HXTMA1
- Infineon Technologies
-
1:
CHF 7.03
-
1 051Auf Lager
|
Mouser-Teilenr.
726-IMBG65R048M1HXTM
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
1 051Auf Lager
|
|
|
CHF 7.03
|
|
|
CHF 4.81
|
|
|
CHF 3.80
|
|
|
CHF 3.79
|
|
|
CHF 3.23
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
45 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 175 C
|
183 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMBG65R072M1HXTMA1
- Infineon Technologies
-
1:
CHF 5.84
-
911Auf Lager
|
Mouser-Teilenr.
726-IMBG65R072M1HXTM
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
911Auf Lager
|
|
|
CHF 5.84
|
|
|
CHF 3.96
|
|
|
CHF 2.97
|
|
|
CHF 2.96
|
|
|
CHF 2.52
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
33 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 175 C
|
140 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMZA65R027M1HXKSA1
- Infineon Technologies
-
1:
CHF 10.72
-
222Auf Lager
-
720erwartet ab 30.07.2026
|
Mouser-Teilenr.
726-IMZA65R027M1HXKS
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
222Auf Lager
720erwartet ab 30.07.2026
|
|
|
CHF 10.72
|
|
|
CHF 6.51
|
|
|
CHF 5.71
|
|
|
CHF 5.67
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
59 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMZA65R030M1HXKSA1
- Infineon Technologies
-
1:
CHF 8.54
-
254Auf Lager
|
Mouser-Teilenr.
726-IMZA65R030M1HXKS
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
254Auf Lager
|
|
|
CHF 8.54
|
|
|
CHF 5.83
|
|
|
CHF 5.10
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
53 A
|
42 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
48 nC
|
- 55 C
|
+ 175 C
|
197 W
|
Enhancement
|
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
CHF 6.69
-
332Auf Lager
|
Mouser-Teilenr.
726-IMZA65R048M1HXKS
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
332Auf Lager
|
|
|
CHF 6.69
|
|
|
CHF 4.25
|
|
|
CHF 3.64
|
|
|
CHF 3.58
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
CHF 10.31
-
95Auf Lager
-
240erwartet ab 24.02.2026
|
Mouser-Teilenr.
726-IMW65R027M1HXKSA
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
95Auf Lager
240erwartet ab 24.02.2026
|
|
|
CHF 10.31
|
|
|
CHF 6.25
|
|
|
CHF 5.54
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMW65R030M1HXKSA1
- Infineon Technologies
-
1:
CHF 9.51
-
1Auf Lager
-
240erwartet ab 02.03.2026
|
Mouser-Teilenr.
726-IMW65R030M1HXKSA
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
1Auf Lager
240erwartet ab 02.03.2026
|
|
|
CHF 9.51
|
|
|
CHF 5.73
|
|
|
CHF 5.24
|
|
|
CHF 4.98
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
58 A
|
42 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
48 nC
|
- 55 C
|
+ 175 C
|
197 W
|
Enhancement
|
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMW65R057M1HXKSA1
- Infineon Technologies
-
1:
CHF 5.92
-
81Auf Lager
|
Mouser-Teilenr.
726-IMW65R057M1HXKSA
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
81Auf Lager
|
|
|
CHF 5.92
|
|
|
CHF 3.61
|
|
|
CHF 3.07
|
|
|
CHF 2.98
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
35 A
|
74 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
28 nC
|
- 55 C
|
+ 175 C
|
133 W
|
Enhancement
|
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMW65R072M1HXKSA1
- Infineon Technologies
-
1:
CHF 5.84
-
200Auf Lager
|
Mouser-Teilenr.
726-IMW65R072M1HXKSA
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
200Auf Lager
|
|
|
CHF 5.84
|
|
|
CHF 3.06
|
|
|
CHF 2.78
|
|
|
CHF 2.77
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
26 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMW65R083M1HXKSA1
- Infineon Technologies
-
1:
CHF 4.51
-
80Auf Lager
-
240erwartet ab 03.07.2026
|
Mouser-Teilenr.
726-IMW65R083M1HXKSA
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
80Auf Lager
240erwartet ab 03.07.2026
|
|
|
CHF 4.51
|
|
|
CHF 2.90
|
|
|
CHF 2.54
|
|
|
CHF 2.40
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
111 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
19 nC
|
- 55 C
|
+ 175 C
|
104 W
|
Enhancement
|
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMW65R107M1HXKSA1
- Infineon Technologies
-
1:
CHF 4.68
-
151Auf Lager
|
Mouser-Teilenr.
726-IMW65R107M1HXKSA
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
151Auf Lager
|
|
|
CHF 4.68
|
|
|
CHF 2.72
|
|
|
CHF 2.46
|
|
|
CHF 2.19
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
142 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
15 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMZA65R039M1HXKSA1
- Infineon Technologies
-
1:
CHF 7.07
-
135Auf Lager
|
Mouser-Teilenr.
726-IMZA65R039M1HXKS
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
135Auf Lager
|
|
|
CHF 7.07
|
|
|
CHF 4.63
|
|
|
CHF 3.84
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
50 A
|
50 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
41 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMZA65R057M1HXKSA1
- Infineon Technologies
-
1:
CHF 5.96
-
132Auf Lager
|
Mouser-Teilenr.
726-IMZA65R057M1HXKS
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
132Auf Lager
|
|
|
CHF 5.96
|
|
|
CHF 3.84
|
|
|
CHF 3.76
|
|
|
CHF 3.07
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
35 A
|
74 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
28 nC
|
- 55 C
|
+ 175 C
|
133 W
|
Enhancement
|
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMW65R039M1HXKSA1
- Infineon Technologies
-
1:
CHF 7.21
-
480erwartet ab 24.02.2026
|
Mouser-Teilenr.
726-IMW65R039M1HXKSA
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
480erwartet ab 24.02.2026
|
|
|
CHF 7.21
|
|
|
CHF 4.43
|
|
|
CHF 3.84
|
|
|
CHF 3.77
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
46 A
|
50 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
41 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMW65R048M1HXKSA1
- Infineon Technologies
-
1:
CHF 6.66
-
480erwartet ab 16.06.2026
|
Mouser-Teilenr.
726-IMW65R048M1HXKSA
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
480erwartet ab 16.06.2026
|
|
|
CHF 6.66
|
|
|
CHF 4.00
|
|
|
CHF 3.61
|
|
|
CHF 3.48
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
CHF 5.99
-
Nicht-auf-Lager-Vorlaufzeit 11 Wochen
|
Mouser-Teilenr.
726-IMZA65R072M1HXKS
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
Nicht-auf-Lager-Vorlaufzeit 11 Wochen
|
|
|
CHF 5.99
|
|
|
CHF 3.47
|
|
|
CHF 2.84
|
|
|
CHF 2.70
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
Schweiz