600V Single N-Channel Power MOSFETs

Taiwan Semiconductor 600V Single N-channel power MOSFETs incorporate super-junction technology and operate within the -55°C to 150°C temperature range. These MOSFETs are Pb-free, RoHS-compliant, and halogen-free. Typical applications include lighting, industrial, and switching applications.

Ergebnisse: 29
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Menge RoHS ECAD Model Technologie
Montageart
Verpackung/Gehäuse
Transistorpolung
Anzahl der Kanäle
Vds - Drain-Source-Durchschlagspannung
Id - Drain-Gleichstrom
Rds On - Drain-Source-Widerstand
Vgs - Gate-Source-Spannung
Vgs th - Gate-Source-Schwellspannung
Qg - Gate-Ladung
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Pd - Verlustleistung
Kanalmodus
Qualifikation
Verpackung
Taiwan Semiconductor MOSFETs 600V, 3A, Single N-Channel Power MOSFET
Datenblatt
3 658Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 3 A 1.5 Ohms - 20 V, 20 V 4.3 V 7.6 nC - 55 C + 150 C 39 W Enhancement AEC-Q101 Tube
Taiwan Semiconductor MOSFETs 600V, 3A, Single N-Channel Power MOSFET
Datenblatt
5 000Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 3 A 1.5 Ohms - 20 V, 20 V 5.5 V 8.1 nC - 55 C + 150 C 55 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFETs 600V, 11A, Single N-Channel Power MOSFET
Datenblatt
3 890Auf Lager
Min.: 1
Mult.: 1

Si Through Hole ITO-220-3 N-Channel 1 Channel 600 V 11 A 390 mOhms - 20 V, 20 V 5 V 21.3 nC - 55 C + 150 C 78 W Enhancement AEC-Q101 Tube
Taiwan Semiconductor MOSFETs 600V, 11A, Single N-Channel Power MOSFET
Datenblatt
4 775Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 11 A 390 mOhms - 20 V, 20 V 5 V 21 nC - 55 C + 150 C 125 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFETs 600V, 7A, Single N-Channel Power MOSFET
Datenblatt
3 848Auf Lager
Min.: 1
Mult.: 1

Si Through Hole ITO-220-3 N-Channel 1 Channel 600 V 4 A 980 mOhms - 20 V, 20 V 5 V 11 nC - 55 C + 150 C 57 W Enhancement AEC-Q101 Tube
Taiwan Semiconductor MOSFETs 600V, 42A, Single N-Channel High Voltage MOSFETs
Datenblatt
290Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 42 A 84 mOhms - 30 V, 30 V 6 V 68 nC - 55 C + 150 C 357 W Enhancement AEC-Q101 Tube
Taiwan Semiconductor MOSFETs 600V, 14.5A, Single N-Channel High Voltage MOSFETs
Datenblatt
1 979Auf Lager
Min.: 1
Mult.: 1

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 14.5 A 145 mOhms - 30 V, 30 V 6 V 40 nC - 55 C + 150 C 69 W Enhancement AEC-Q101 Tube
Taiwan Semiconductor MOSFETs 600V, 13A, Single N-Channel High Voltage MOSFETs
Datenblatt
1 988Auf Lager
Min.: 1
Mult.: 1

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 13 A 180 mOhms - 30 V, 30 V 6 V 34 nC - 55 C + 150 C 63 W Enhancement AEC-Q101 Tube
Taiwan Semiconductor MOSFETs 600V, 9.5A, Single N-Channel High Voltage MOSFETs
Datenblatt
1 982Auf Lager
Min.: 1
Mult.: 1

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 9.5 A 285 mOhms - 30 V, 30 V 6 V 22 nC - 55 C + 150 C 56 W Enhancement AEC-Q101 Tube
Taiwan Semiconductor MOSFETs 600V, 61A, Single N-Channel High Voltage MOSFETs
Datenblatt
298Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61 A 48 mOhms - 30 V, 30 V 6 V 114 nC - 55 C + 150 C 431 W Enhancement AEC-Q101 Tube
Taiwan Semiconductor MOSFETs 600V, 51A, Single N-Channel High Voltage MOSFETs
Datenblatt
300Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 51 A 69 mOhms - 30 V, 30 V 6 V 86 nC - 55 C + 150 C 417 W Enhancement AEC-Q101 Tube
Taiwan Semiconductor MOSFETs 600V, 12A, Single N-Channel High Voltage MOSFETs
Datenblatt
1 984Auf Lager
Min.: 1
Mult.: 1

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 12 A 200 mOhms - 30 V, 30 V 6 V 30 nC - 55 C + 150 C 63 W Enhancement AEC-Q101 Tube
Taiwan Semiconductor MOSFETs 600V, 7A, Single N-Channel Power MOSFET
Datenblatt
2 747Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 7 A 620 mOhms - 20 V, 20 V 5 V 15 nC - 55 C + 150 C 78 W Enhancement AEC-Q101 Tube
Taiwan Semiconductor MOSFETs 600V, 7A, Single N-Channel Power MOSFET
Datenblatt
7 500Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7 A 620 mOhms - 20 V, 20 V 5 V 15 nC - 55 C + 150 C 78 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFETs 600V, 4A, Single N-Channel Power MOSFET
Datenblatt
3 747Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 4 A 980 mOhms - 20 V, 20 V 5 V 11 nC - 55 C + 150 C 57 W Enhancement AEC-Q101 Tube
Taiwan Semiconductor MOSFETs 600V, 4A, Single N-Channel Power MOSFET
Datenblatt
4 477Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 4 A 980 mOhms - 20 V, 20 V 5 V 11 nC - 55 C + 150 C 57 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFETs 600V, 14A, Single N-Channel High Voltage MOSFETs
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 12 Wochen
Min.: 4 000
Mult.: 2 000
: 2 000

Si Through Hole ITO-220S-3 N-Channel 1 Channel 600 V 14 A 165 mOhms 20 V, 30 V 5 V 48 nC - 55 C + 150 C 81 W Enhancement AEC-Q101 Reel
Taiwan Semiconductor MOSFETs 600V, 14A, Single N-Channel High Voltage MOSFETs
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 12 Wochen
Min.: 4 000
Mult.: 2 000
: 2 000

Si Through Hole ITO-220S-3 N-Channel 1 Channel 600 V 14 A 165 mOhms 20 V, 30 V 5 V 48 nC - 55 C + 150 C 81 W Enhancement AEC-Q101 Reel
Taiwan Semiconductor MOSFETs 600V, 12A, Single N-Channel High Voltage MOSFETs
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 12 Wochen
Min.: 4 000
Mult.: 2 000
: 2 000

Si Through Hole ITO-220S-3 N-Channel 1 Channel 600 V 12 A 165 mOhms 20 V, 30 V 5 V 42 nC - 55 C + 150 C 74 W Enhancement AEC-Q101 Reel
Taiwan Semiconductor MOSFETs 600V, 12A, Single N-Channel High Voltage MOSFETs
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 12 Wochen
Min.: 4 000
Mult.: 2 000
: 2 000

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 12 A 196 mOhms 20 V, 30 V 5 V 42 nC - 55 C + 150 C 74 W Enhancement AEC-Q101 Reel
Taiwan Semiconductor MOSFETs 600V, 21A, Single N-Channel High Voltage MOSFETs
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 12 Wochen
Min.: 4 000
Mult.: 2 000

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 21 A 84 mOhms - 30 V, 30 V 6 V 69 nC - 55 C + 150 C 83 W Enhancement AEC-Q101 Tube
Taiwan Semiconductor MOSFETs 600V, 24A, Single N-Channel High Voltage MOSFETs
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 40 Wochen
Min.: 4 000
Mult.: 2 000

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 24 A 69 mOhms - 30 V, 30 V 6 V 89 nC - 55 C + 150 C 89 W Enhancement AEC-Q101 Tube
Taiwan Semiconductor MOSFETs 600V, 47A, Single N-Channel High Voltage MOSFETs, TOLL
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 14 Wochen
Min.: 4 000
Mult.: 2 000
: 2 000

Si SMD/SMT TOLL-8 N-Channel 1 Channel 600 V 47 A 84 mOhms 20 V 6 V 69 nC - 55 C + 150 C 431 W Enhancement AEC-Q101 Reel
Taiwan Semiconductor MOSFETs 600V, 27A, Single N-Channel High Voltage MOSFETs, PDFN88
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 14 Wochen
Min.: 6 000
Mult.: 3 000
: 3 000

Si SMD/SMT PDFN88-4 N-Channel 1 Channel 600 V 27 A 110 mOhms 30 V 6 V 56 nC - 55 C + 150 C 178 W Enhancement AEC-Q101 Reel
Taiwan Semiconductor MOSFETs 600V, 17A, Single N-Channel High Voltage MOSFETs
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 40 Wochen
Min.: 4 000
Mult.: 2 000

Si Through Hole ITO-220TL-3 N-Channel 1 Channel 600 V 17 A 110 mOhms - 30 V, 30 V 6 V 55 nC - 55 C + 150 C 73 W Enhancement AEC-Q101 Tube