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SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
16.04 CHF
-
362Auf Lager
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Mouser-Teilenr.
511-SCT020W120G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
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362Auf Lager
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16.04 CHF
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10.03 CHF
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8.71 CHF
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8.67 CHF
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Min.: 1
Mult.: 1
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Through Hole
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Hip247-4
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N-Channel
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1 Channel
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1.2 kV
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100 A
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28 mOhms
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- 10 V, + 22 V
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3 V
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121 nC
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- 55 C
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+ 200 C
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541 W
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Enhancement
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AEC-Q101
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SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
10.02 CHF
-
311Auf Lager
-
1 200erwartet ab 10.08.2026
|
Mouser-Teilenr.
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
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311Auf Lager
1 200erwartet ab 10.08.2026
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10.02 CHF
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8.39 CHF
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6.33 CHF
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5.66 CHF
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Min.: 1
Mult.: 1
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Through Hole
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HiP-247-4
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N-Channel
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1 Channel
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1.2 kV
|
30 A
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87 mOhms
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- 18 V, + 18 V
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4.2 V
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41 nC
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- 55 C
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+ 200 C
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236 W
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Enhancement
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AEC-Q101
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SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
9.67 CHF
-
79Auf Lager
|
Mouser-Teilenr.
511-SCT070H120G3AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
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79Auf Lager
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9.67 CHF
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6.76 CHF
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5.81 CHF
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5.42 CHF
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Min.: 1
Mult.: 1
:
1 000
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SMD/SMT
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H2PAK-7
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N-Channel
|
1 Channel
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1.2 kV
|
30 A
|
87 mOhms
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- 18 V, + 18 V
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4.2 V
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37 nC
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- 55 C
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+ 175 C
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223 W
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Enhancement
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AEC-Q101
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SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070HU120G3AG
- STMicroelectronics
-
1:
11.20 CHF
-
1 199erwartet ab 02.07.2026
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Mouser-Teilenr.
511-SCT070HU120G3AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
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1 199erwartet ab 02.07.2026
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11.20 CHF
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8.11 CHF
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6.71 CHF
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6.26 CHF
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Min.: 1
Mult.: 1
:
600
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SMD/SMT
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HU3PAK-7
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N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
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SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4
- STMicroelectronics
-
1:
8.69 CHF
-
Nicht-auf-Lager-Vorlaufzeit 22 Wochen
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT070W120G3-4
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
Nicht-auf-Lager-Vorlaufzeit 22 Wochen
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8.69 CHF
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|
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5.18 CHF
|
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4.70 CHF
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Min.: 1
Mult.: 1
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Through Hole
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HiP247-4
|
N-Channel
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|
1.2 kV
|
30 A
|
87 mOhms
|
- 10 V, + 22 V
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3 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
|
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Schweiz