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PANJIT 60V N-Channel Enhancement Mode MOSFETs

PANJIT 60V N-Channel Enhancement Mode MOSFETs offer low reverse transfer capacitance in an AEC-Q101-qualified DFN5060-8L package. Operating within a -55°C to +150°C junction temperature range, these MOSFETs provide a maximum power dissipation range from 20W to 50W and single pulse avalanche ratings (28A current, 39mJ energy). Applications include automotive LED lighting, wireless chargers, and DC/DC converters.

Features

  • Low reverse transfer capacitance
  • AEC-Q101 qualified
  • Solderable terminals per MIL-STD-750, Method 2026
  • Lead-free in compliance with EU RoHS 2.0
  • Green molding compound as per IEC 61249 standard

Applications

  • Automotive LED lighting
  • Wireless chargers
  • DC/DC converters

Specifications

  • 60V maximum drain-source
  • ±20V maximum gate-source
  • 272A maximum pulsed drain current at +25°C
  • Maximum single pulse avalanche
    • 28A current
    • 39mJ energy
  • -55°C to +150°C operating junction temperature range
  • Thermal resistance
    • 2.5°C/W junction-to-case (bottom)
    • 28°C/W junction-to-case (top)
    • 50°C/W junction-to-ambient

Package Dimensions

PANJIT 60V N-Channel Enhancement Mode MOSFETs

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View Results ( 5 ) Page
Teilnummer Datenblatt Verpackung/Gehäuse Id - Drain-Gleichstrom Rds On - Drain-Source-Widerstand Qg - Gate-Ladung Pd - Verlustleistung Anstiegszeit Abfallzeit
PJP125N06SA-AU_T0_006A1 PJP125N06SA-AU_T0_006A1 Datenblatt TO-220AB-3 215 A 2.6 mOhms 82 nC 214 W 26 ns 37 ns
PJP100N06SA-AU_T0_006A1 PJP100N06SA-AU_T0_006A1 Datenblatt TO-220AB-3 95 A 6.1 mOhms 40 nC 100 W 35 ns 59 ns
PJP75N06SA-AU_T0_006A1 PJP75N06SA-AU_T0_006A1 Datenblatt TO-220AB-3 64 A 9 mOhms 27 nC 75 W 28 ns 50 ns
PSMQC060N06LS1-AU_R2_006A1 PSMQC060N06LS1-AU_R2_006A1 Datenblatt DFN-5060-8 68 A 6 mOhms 19 nC 50 W 85 ns 33 ns
PSMQC060N06LS1 PSMQC060N06LS1 Datenblatt
Veröffentlichungsdatum: 2023-05-26 | Aktualisiert: 2024-09-06