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Taiwan Semiconductor TSM600NA25CIT N-Channel Power MOSFET

Taiwan Semiconductor TSM600NA25CIT N-Channel Power MOSFET is a 250V low-voltage and single configuration MOSFET built with Trench technology. This MOSFET features a 22A continuous drain current, 60mΩ drain-source resistance, 78W power dissipation, and 71nC gate charge. The TSM600NA25CIT MOSFET offers 22pF reverse transfer capacitance and is Pb-free, halogen-free, and RoHS compliant. This power MOSFET is ideally used in Uninterruptible Power Supply (UPS), AC-DC power supply, and lighting applications.

Features

  • Single configuration and N-channel MOSFET
  • Trench technology
  • 250V low drain-source voltage (VDS)
  • 22A continuous drain current (ID) @ (TC=25°C)
  • 60mΩ low drain-source resistance (RDS(ON)) (maximum)
  • 71nC low gate charge (Qg) (Typical)
  • 22pF low reverse transfer capacitance (Crss) (Typical)
  • 78W power dissipation (Pd)
  • -55°C to 150°C operating temperature range
  • RoHS compliant
  • Pb-free
  • Halogen-free
  • Isolation voltage 2500V/1min
  • ITO-220TL package

Applications

  • Uninterruptible Power Supply (UPS)
  • AC-DC power supply
  • Lighting

Package Outline Dimensions

Mechanical Drawing - Taiwan Semiconductor TSM600NA25CIT N-Channel Power MOSFET
Veröffentlichungsdatum: 2024-03-11 | Aktualisiert: 2024-03-22