SemiQ 1200V SiC MOSFET Six-Pack Modules

SemiQ 1200V SiC MOSFET Six-Pack Modules are highly efficient modules designed to boost cost-efficiency and allow more compact system-level designs. These SemiQ high-speed switching SiC MOSFETs implement a planar technology with rugged gate oxide and feature a reliable body diode. These design elements are arranged in a three-phase bridge topology. 1200V SiC MOSFET Six-Pack Modules also feature split DC negative terminals, press-fit terminal connections, and a Kelvin reference for stable operation. The high-power-density modules offer low switching losses and low junction-to-case thermal resistance. All parts are tested beyond 1350V with 100% wafer-level burn-in (WLBI).

Features

  • High-speed switching SiC MOSFETs
  • Reliable body diode
  • All parts tested to >1350V
  • Kelvin reference for stable operation
  • Press-fit terminal connections
  • Split DC negative terminals

Applications

  • AC/DC converters
  • Power-factor correction (PFC) boost converters
  • Battery chargers
  • Energy storage systems
  • Motor drives

Specifications

  • 30A current
  • 1200VDC voltage rating
  • 263W power dissipation
  • -40°C to +175°C junction temperature range
  • B2 package

Schematic

Schematic - SemiQ 1200V SiC MOSFET Six-Pack Modules
Veröffentlichungsdatum: 2025-04-18 | Aktualisiert: 2025-07-14