PANJIT SiC Schottky Barrier Diodes
PANJIT Silicon-Carbide (SiC) Schottky Barrier Diodes with low forward-voltage and zero reverse recovery current ensure cooler system temperature under harsh operating conditions of power conversion systems. These SiC diodes feature low conduction and switching loss, high surge current capability, temperature-independent switching behavior, and positive temperature co-efficient on VF. The SiC diodes are available at a range of 2A to 20A forward current (IF) and 650V to 1200V Maximum Repetitive Peak Reverse Voltage (VRRM) ratings. These hard switching and highly reliable diodes operate at high-frequency and offer high system efficiency. The SiC Schottky diodes are ideal for high-temperature applications.
Features
- Low conduction and switching loss
- High surge current capability
- Temperature-independent switching behavior
- Positive temperature co-efficient on VF
- Fast reverse recovery
- 2A to 20A range of IF
- 650V to 1200V range of VRRM
- High-frequency operation
- High system efficiency
- Environmental protection
- Parallel device convenience
- Hard switching and high reliability
Applications
- Harsh environments
- High-temperature applications
Veröffentlichungsdatum: 2021-03-10
| Aktualisiert: 2022-03-11