Monolithic Power Systems (MPS) MPQ18811 AEC-Q100 Single-Channel Gate Drivers
Monolithic Power Systems (MPS) MPQ18811 AEC-Q100 Single-Channel Gate Drivers are isolated high-performance solutions designed for automotive applications. The MPS MPQ18811 features up to 6A of source and 10A of sink peak current capacity, making the devices ideal for driving power-switching devices with minimal propagation delay and pulse-width distortion. Utilizing capacitive-based isolation technology, the MPQ18811 provides a reinforced isolation voltage up to 5kVRMS and boasts a common-mode transient immunity (CMTI) rating above 150kV/μs. The driver operates efficiently across a wide input voltage range of 2.8V to 5.5V on the primary side and up to 30V on the secondary side. With integrated protection features such as under-voltage lockout (UVLO) and an internal active Miller clamp, the MPQ18811 ensures robust performance in demanding environments. Available in SOIC-8 narrow-body (NB) and wide-body (WB) packages, these gate drivers are certified to meet stringent automotive standards.Features
- Up to 5kVRMS input-to-output reinforced isolation voltage (SOIC-8 WB)
- >150kV/µs Common-Mode Transient Immunity (CMTI)
- 2.8V to 5.5V input VDDI range to interface with TTL/CMOS-compatible inputs
- Differential input control
- Up to 30V output drive supply with multiple Under-Voltage Lockout (UVLO) options
- Single output with Miller clamp
- 6A source/10A sink peak current output
- 55ns typical propagation delay with tiny ±5ns distribution from part to part
- Internal active Miller clamp
- -40°C to +150°C operating junction temperature (TJ) range
- Available in SOIC-8 NB or SOIC-8 WB packages
- UL 1577 certified
- 3kVRMS isolation for 60s for SOIC-8 NB package
- 5kVRMS isolation for 60s for SOIC-8 WB package
- Available in AEC-Q100 Grade 1
- DIN EN IEC 60747-17 (VDE 0884-17), 2021-10 certified
- CQC certification per GB 4943.1-2022
- Moisture Sensitivity Level (MSL) 2
Applications
- EV/HEV motor driver inverters
- Onboard chargers
- Industrial drivers
- Half-/full-bridge converters
- Isolated DC/DC and AC/DC converters
Specifications
- Maximum continuous power dissipation at +25°C
- 1405mW for SOIC-8 NB
- 1785mW for SOIC-8 WB
- Input-side supply
- 2.42V to 2.78V VDDI UVLO threshold
- 80mV to 120mV VDDI UVLO hysteresis
- 1mA maximum VDDI quiescent current, 0.6mA typical
- 2mA maximum VDDI operating current, 1.3mA typical
- Output side supply
- 5V to 16.5V VDDO UVLO threshold range
- 200mV to 1.2V VDDO UVLO hysteresis range
- 1.5mA maximum VDDO quiescent current, 1mA typical
- 4.5mA to 5.5mA maximum VDDO operation current range
- -6A typical output peak source current
- 10A typical output peak sink current
- 1650mΩ maximum output source resistance
- 670mΩ maximum output sink resistance
- 6ns to 15ns Dead Time (DT) range
- Active Miller clamp
- 1.5V to 2.5V active clamp threshold voltage range
- 2A typical low-level clamp current
- 2Ω maximum clamp FET on resistance
- 40ns maximum active clamp turn-on delay
- Thermal shutdown
- +170°C typical primary/secondary thermal shutdown threshold
- +20°C typical primary/secondary thermal shutdown hysteresis
- ESD ratings
- 4000V Human Body Model (HBM)
- 2000V Charged-Device Model (CDM)
- -40°C to +150°C operating junction temperature range
- +150°C maximum junction temperature
- +260°C maximum solder temperature
Typical Application
Block Diagram
Veröffentlichungsdatum: 2025-04-14
| Aktualisiert: 2025-05-06
