Micro Commercial Components (MCC) MCGWF085P10 Power MOSFET
Micro Commercial Components (MCC) MCGWF085P10 Power MOSFET is a -100V (VDS) P-channel MOSFET engineered to deliver high performance in compact power systems. This MOSFET is built with Trench MV MOSFET technology and features a high-density cell design for ultra-low RDS(on), reducing conduction losses for efficient operation. The MCGWF085P10 MOSFET offers good thermal performance and a total gate charge of 44.4nC, making it well-suited for fast switching in high-frequency applications. This compact power MOSFET features a total power dissipation of 56.8W and is housed in a DFN3333-8 (SWF) surface-mount package. The MCGWF085P10 MOSFET is suitable for applications that require efficient switching and power handling in compact designs, such as DC-DC converters, load switches, and battery-powered devices.
Features
- Trench MV MOSFET technology
- High-density cell design for ultra-low RDS(on)
- -100V (VDS) drain-source voltage
- Fast switching performance with low gate charge of 44.4nC (Qg)
- 56.8W power dissipation (PD)
- 11.5Ω gate resistance (Rg)
- 2040pF input capacitance (Ciss)
- -55°C to 150°C operating junction temperature range
- DFN3333-8 (SWF) surface-mount package
- Moisture Sensitivity Level-1 (MSL-1)
- Halogen-free "Green" device
- Epoxy meets UL 94 V-0 flammability rating
- RoHS compliant
Applications
- Power management:
- DC-DC converters
- Power supply modules
- Battery Management Systems (BMS)
- High-side switching
- Industrial automation:
- Motor control
- Load switches
- Relay replacements
- Consumer electronics:
- LED drivers
- Portable device power switching
- Smart home appliances
Package Dimensions
Related Power MOSFET
Micro Commercial Components (MCC) MCG080N06LHE3 Power MOSFET
60V (VDS), N-channel compact power MOSFET with enhanced drain pad, housed in a PDFN3333-B package.
Veröffentlichungsdatum: 2025-08-28
| Aktualisiert: 2025-09-03