Infineon Technologies RC-IGBT 1200V Chips

Infineon Technologies RC-IGBT 1200V Chips provide high reliability, ruggedness, and fault tolerance, making them well-suited for electric vehicle (EV) charging systems, traction inverters, and other high-power applications. With its advanced reverse-conducting insulated-gate bipolar transistor (RC-IGBT) design, these bare dies offer low conduction and switching losses, along with excellent thermal performance. The chips are tailored specifically for 800V systems, enabling designers to develop more efficient, compact, and reliable systems while reducing system complexity, development time, and the overall bill of materials (BOM). Infineon RC-IGBT 1200V Chips elevate performance by integrating IGBT and diode functions on a single die, resulting in an even higher current density than separate IGBT and diode chipset solutions.