iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETs
iDEAL Semi iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETs are designed for SMPS and high-efficiency motor drives. The 200V MOSFETs feature ultra-low conduction and switching losses in a robust PDFN package measuring 5mm x 6mm. The iDEAL Semi iS20M028S1C SuperQ 200V N-Ch Power MOSFETs supply superior RDS(on) and QSW, while minimizing heat dissipation at both full and partial loads.
Features
- 175°C Industrial temperature rating
- Robustness under fault conditions
- 100% UIS tested in production
- Low switching losses, QSW, and EOSS
- Easier parallelling with +0.5V gate threshold
Applications
- Motor control
- Boost converters and SMPS control FETs
- Secondary side synchronous rectifier
Associated MOSFETs
iDEAL Semiconductor iS15M7R1S1C SuperQ™ 150V N-Channel Power MOSFETs
Designed to deliver superior efficiency and switching performance in demanding power applications.
iDEAL Semiconductor SuperQ™ Technology
Redefines the fundamental structure of the power MOSFET at the atomic level, from 50% to 95%.
Package Style
Performance Graph
Veröffentlichungsdatum: 2025-11-12
| Aktualisiert: 2025-11-24