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Comchip Technology CPDE5V0 ESD Protection Diode

Comchip Technology’s CPDE5V0 ESD Protection Diode protects one line with bi-directional ESD suppression. It delivers a fast response time, low reverse clamping voltage, and minimal leakage current. The diode handles up to 50W of peak pulse power (PPP) and 5A of peak pulse current (IPP). The Comchip CPDE5V0 operates within a junction (TJ) and storage temperature (TSTG) range of -55°C to +150°C.

Features

  • Bi-directional ESD protection of one line
  • Fast response time
  • Low reverse clamping voltage
  • Low leakage current
  • Halogen-free and RoHS-compliant

Applications

  • Mobile phones
  • Notebooks and handhelds
  • Cameras
  • Displays

Specifications

  • 50W (max.) peak pulse power (PPP) (at TP = 8/20µs)
  • 5A (max.) peak pulse current (IPP) (at TP = 8/20µs)
  • 5V (max.) reverse standoff voltage (VRRM)
  • 0.1µA (max.) reverse leakage current (IR) (at VRRM = 5V)
  • Breakdown voltage (VBR) (at IT = 1mA) is 5.8V (min.), 8.3V (max.)
  • ESD capability
    • IEC 61000-4 (air) is ±25kV
    • IEC 61000-4-2 (contact ) is ±25kV
  • JESD22-A114-B ESD voltage (per human body model (HBM)) is ±16kV
  • ESD voltage (machine model (MM)) is ±0.4kV
  • Lead solder temperature (max. 10 sec duration) (TL) is 260°C
  • Operation junction and storage temperature range (TJ, TSTG) is -55°C to +150°C
  • SOD-723, molded plastic case
  • Any mounting position
  • Terminals are tin-plated and solderable per MIL-STD-750, method 2026

Circuit Diagram

Schematic - Comchip Technology CPDE5V0 ESD Protection Diode

Package Dimensions

Mechanical Drawing - Comchip Technology CPDE5V0 ESD Protection Diode
Veröffentlichungsdatum: 2025-10-22 | Aktualisiert: 2025-11-13