Asahi Kasei Microdevices HQ-0A11 InAs Quantum Well Hall Element

Asahi Kasei Microdevices HQ-0A11 InAs Quantum Well Hall Element is designed to output an electric signal according to the strength of the magnetic field created by the magnet. This hall element includes 0.66mV/mA/mT sensitivity, 6V maximum input voltage, 8.5mA maximum input current, and 600Ω minimum input resistance. The HQ-0A11 InAs quantum hall element features a 16% better Signal-to-Noise (S/N) ratio directly correlated to position detection accuracy. This device operates at a temperature range of -40°C to 125°C and offers a small and thin package size of 0.8mm x 0.4mm x 0.23mm. Typical applications include paper thickness detection, smartphone cameras, detection with joysticks, magnetic encoder, wheel rotation speed detection, and lens modules.

Features

  • High S/N performance with 16% better S/N (Signal-to-Noise) ratio
  • 0.66mV/mA/mT sensitivity
  • 6V maximum input voltage
  • 600Ω minimum input resistance
  • 600Ω minimum output resistance
  • 8.5mA maximum input current
  • -40°C to 125°C operating temperature range
  • 0.8mm x 0.4mm x 0.23mm size
  • Pb free
  • Halogen-free
  • Moisture Sensitivity Level 1 (MSL)

Applications

  • Paper thickness detection
  • Detection of opening and closing of mobile phones and personal computers
  • Lens modules
  • Detection with joysticks
  • Magnetic encoder
  • Current measurement with an overhead wire ammeter (clamp type ammeter)
  • Position detection with brushless motor
  • Wheel rotation speed detection

Size Comparison

Asahi Kasei Microdevices HQ-0A11 InAs Quantum Well Hall Element

Input Voltage Derating Curve

Performance Graph - Asahi Kasei Microdevices HQ-0A11 InAs Quantum Well Hall Element

Dimension Diagram

Mechanical Drawing - Asahi Kasei Microdevices HQ-0A11 InAs Quantum Well Hall Element
Veröffentlichungsdatum: 2025-01-13 | Aktualisiert: 2025-01-27