0 C Circuiti integrati di memoria

Risultati: 6 110
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (CHF) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Prodotto Tipo di prodotto Stile di montaggio Package/involucro Dimensioni memoria Tipo di interfaccia
Alliance Memory DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR 1A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT TSOP-II-66 512 Mbit
ISSI IS43LR16800G-6BL
ISSI DRAM 128M, 1.8V, M-DDR 8Mx32, 166Mhz, RoHS 141A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT 128 Mbit
Alliance Memory AS4C4M32SA-6TCN
Alliance Memory DRAM SDRAM, 128MB, 4M X 32, 3.3V, 86PIN TSOP II, 166 MHZ, COMMERCIAL TEMP - Tray 64A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT TSOP-II-86 128 Mbit
Zentel Japan DRAM DDR2 512Mb, 64Mx8, 800 at CL5, 1.8V, FBGA-60 59A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT FPGA-60 512 Mbit
Intelligent Memory DRAM DDR4 8Gb, 1.2V, 512Mx16, 1600MHz (3200Mbps), 0C to +95C, FBGA-96
41828.08.2026 previsto
Min: 1
Mult.: 1

DRAM SMD/SMT FBGA-96 8 Gbit
ISSI DRAM 1G, 1.35V, DDR3L, 128Mx8, 1866MT/s at 13-13-13, 78 ball BGA (8mm x10.5mm) RoHS 81A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT BGA-78 1 Gbit
ISSI DRAM 1G, 1.35V, DDR3L, 128Mx8, 1600MT/s at 10-10-10, 78 ball BGA (8mm x10.5mm) RoHS 126A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT BGA-78 1 Gbit
Alliance Memory DRAM DDR3, 4G, 256M X 16, 1.35V, 96-BALL FBGA, 800MHZ, Commercial Temp - Tape & Reel 10A magazzino
Min: 1
Mult.: 1
: 2 500

DRAM SMD/SMT FBGA-96 4 Gbit
Alliance Memory SRAM SRAM, 4Mb, 256K x 16, 3.3V, 44pin SOJ, Commercial Temp - Tube 56A magazzino
Min: 1
Mult.: 1

SRAM SMD/SMT SOJ-44 4 Mbit Parallel
GSI Technology SRAM NBT SRAMs, 9Mb, x32, 150MHz, Commercial Temp 415A magazzino
Min: 1
Mult.: 1

SRAM SMD/SMT TQFP-100 9 Mbit Parallel
SMARTsemi DRAM DRAM DDR3(L) 4GB 256MX16 1866Mbps 1.35V/1.5V 96-FBGA Commercial
13128.09.2026 previsto
Min: 1
Mult.: 1

DRAM SMD/SMT FBGA-96 4 Gbit

STMicroelectronics EEPROM 2Kbit Serial EE 2 102A magazzino
Min: 1
Mult.: 1
: 4 000

EEPROM SMD/SMT TSSOP-8 2 kbit 2-Wire, I2C
ISSI DRAM 256Mb, 1.8V, 267MHz 16Mx16 DDR2 SDRAM 49A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT BGA-84 256 Mbit
ISSI DRAM 512M (32Mx16) 200MHz 2.5v DDR SDRAM 59A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT TSOP-II-66 512 Mbit
ISSI DRAM 512M (32Mx16) 166MHz 2.5v DDR SDRAM 28A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT TSOP-II-66 512 Mbit
ISSI DRAM 512M (64Mx8) 200MHz 2.5v DDR SDRAM 96A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT TSOP-II-66 512 Mbit
Alliance Memory AS8C163631-QC166N
Alliance Memory SRAM SYNC SRAM, 18Mb, 512K x 36, ZBT(Pipelined), 2.5V, 166MHz, 100TQFP - Tray 2A magazzino
Min: 1
Mult.: 1

SRAM SMD/SMT TQFP-100 18 Mbit Parallel
STMicroelectronics EEPROM 128kB Serial I2C Bus 1.7V to 5.5V 400kHz 7 475A magazzino
15 000In ordine
Min: 1
Mult.: 1
: 5 000

EEPROM SMD/SMT UFDFPN-8 128 kbit 2-Wire, I2C

STMicroelectronics EEPROM 128 Kbit Serial I2C Bus EEPROM
7 500In ordine
Min: 1
Mult.: 1
: 2 500

EEPROM SMD/SMT SOIC-8 128 kbit 2-Wire, I2C
Microchip Technology NOR Flash 2.7V to 3.6V 16Mbit SPI Serial Flash
3 99702.09.2026 previsto
Min: 1
Mult.: 1
: 2 000

NOR Flash SMD/SMT WSON-8 16 Mbit SPI
Analog Devices / Maxim Integrated NVRAM 1024k Nonvolatile SRAM
9927.08.2026 previsto
Min: 1
Mult.: 1
Max.: 99

NVRAM Through Hole EDIP-32 1 Mbit Parallel
Analog Devices / Maxim Integrated NVRAM 4096k Nonvolatile SRAM
1123.09.2026 previsto
Min: 1
Mult.: 1
Max.: 11

NVRAM Through Hole EDIP-32 4 Mbit Parallel
Analog Devices / Maxim Integrated NVRAM 256k Nonvolatile SRAM with Battery Monit
8019.10.2026 previsto
Min: 1
Mult.: 1
Max.: 80

NVRAM SMD/SMT PowerCap Module-34 256 kbit Parallel
Infineon Technologies SRAM 36MB SRAM with ECC
14409.02.2027 previsto
Min: 1
Mult.: 1

SRAM SMD/SMT TQFP-100 36 Mbit Parallel
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M
3631.08.2026 previsto
Min: 1
Mult.: 1

SRAM SMD/SMT BGA-165 18 Mbit Parallel