MOSFETs MOSFET SiC

Risultati: 161
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (CHF) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Stile di montaggio Package/involucro Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Qualifica Nome commerciale


Infineon Technologies MOSFET SiC CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-3 package 1 139A magazzino
24.35 CHF
16.36 CHF
Min: 1
Mult.: 1
Through Hole 1 Channel 1.2 kV 127 A 14 mOhms - 10 V, + 23 V 4.2 V 110 nC - 55 C + 150 C 455 W Enhancement
Wolfspeed MOSFET SiC SiC, MOSFET, 75mO, 1200V, TO-247-4, 175C capable, Industrial 670A magazzino
7.04 CHF
4.11 CHF
3.78 CHF
3.58 CHF
3.29 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 32 A 90 mOhms - 8 V, + 19 V 3.6 V 53 nC - 40 C + 175 C 136 W Enhancement
Wolfspeed MOSFET SiC SiC, MOSFET, 40mohm, 1200V, TO-263-7XL, Industrial 661A magazzino
10.45 CHF
5.92 CHF
5.87 CHF
5.84 CHF
5.46 CHF
Min: 1
Mult.: 1
SMD/SMT 1 Channel 1.2 kV 64 A 53.5 mOhms - 8 V, + 19 V 3.6 V 94 nC - 40 C + 150 C 272 W Enhancement


Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET 1 000A magazzino
Nastro continuo
5.02 CHF
2.65 CHF
1.96 CHF
1.95 CHF
Nastrati
1.95 CHF
Min: 1
Mult.: 1
: 1 000
SMD/SMT 1 Channel 650 V 17 A 217 mOhms - 5 V, + 23 V 5.7 V 27 nC - 55 C + 175 C 85 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET 143A magazzino
Nastro continuo
14.67 CHF
9.06 CHF
8.81 CHF
Nastrati
8.57 CHF
Min: 1
Mult.: 1
: 1 000
SMD/SMT 1 Channel 650 V 64 A 30 mOhms - 5 V, + 23 V 5.7 V 67 nC - 55 C + 175 C 300 W Enhancement CoolSiC


Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET 1 995A magazzino
Nastro continuo
7.56 CHF
4.40 CHF
4.06 CHF
3.81 CHF
Nastrati
3.62 CHF
Min: 1
Mult.: 1
: 1 000
SMD/SMT 1 Channel 650 V 39 A 74 mOhms - 5 V, + 23 V 5.7 V 28 nC - 55 C + 175 C 161 W Enhancement CoolSiC
GeneSiC Semiconductor MOSFET SiC 1200V 12mohm TO-247-4 G3R SiC MOSFET 1 614A magazzino
49.92 CHF
46.53 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 111 A 12 mOhms - 10 V, + 22 V 2.7 V 288 nC - 55 C + 175 C 567 W Enhancement
Central Semiconductor MOSFET SiC 1700V Through-Hole MOSFET N-Channel SiC 17A magazzino
31.83 CHF
26.05 CHF
23.02 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.7 kV 26 A 40 mOhms 20 V 2.4 V - 55 C + 175 C 28 W Depletion
Wolfspeed MOSFET SiC SiC, MOSFET 45mohm, 650V TO-263-7XL, Industrial 601A magazzino
8.61 CHF
4.78 CHF
4.56 CHF
4.53 CHF
4.23 CHF
Min: 1
Mult.: 1
SMD/SMT 1 Channel 650 V 47 A 60 mOhms - 8 V, + 19 V 3.6 V 61 nC - 40 C + 150 C 147 W Enhancement
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET 1 019A magazzino
Nastro continuo
8.16 CHF
4.51 CHF
4.23 CHF
4.17 CHF
Nastrati
4.01 CHF
Min: 1
Mult.: 1
: 1 000
SMD/SMT 1 Channel 650 V 45 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 175 C 183 W Enhancement CoolSiC


Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET 861A magazzino
Nastro continuo
5.98 CHF
3.76 CHF
3.44 CHF
3.25 CHF
Nastrati
3.21 CHF
Min: 1
Mult.: 1
: 1 000
SMD/SMT 1 Channel 650 V 33 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 175 C 140 W Enhancement CoolSiC


Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET 753A magazzino
Nastro continuo
5.43 CHF
3.18 CHF
2.90 CHF
2.73 CHF
Nastrati
2.62 CHF
Min: 1
Mult.: 1
: 1 000
SMD/SMT 1 Channel 650 V 24 A 141 mOhms - 5 V, + 23 V 5.7 V 35 nC - 55 C + 175 C 110 W Enhancement CoolSiC
GeneSiC Semiconductor MOSFET SiC 1700V 450mohm TO-247-3 G3R SiC MOSFET 1 702A magazzino
5.80 CHF
5.21 CHF
5.00 CHF
4.69 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.7 kV 7 A 450 mOhms - 5 V, + 15 V 2.7 V 13 nC - 55 C + 175 C 70 W Enhancement
ROHM Semiconductor MOSFET SiC TO263 1.2KV 75A N-CH SIC 994A magazzino
Nastro continuo
22.45 CHF
15.60 CHF
15.59 CHF
Nastrati
14.57 CHF
Min: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7LA 1 Channel 1.2 kV 75 A 23.4 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C Enhancement
SemiQ MOSFET SiC Gen3 1200V, 20mohm SiC MOSFET, TO-247-4L 391A magazzino
10.13 CHF
6.07 CHF
5.23 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4L 1 Channel 1.2 kV 280 A 25 mOhms - 4.5 V, + 18 V 4 V 234 nC - 55 C + 175 C 429 W Enhancement
Wolfspeed MOSFET SiC SiC, MOSFET, 900mO, 1700V, TO-263-7 T&R, Industrial 2 412A magazzino
Nastro continuo
4.77 CHF
2.70 CHF
2.33 CHF
1.94 CHF
Nastrati
1.77 CHF
1.54 CHF
Min: 1
Mult.: 1
: 800
SMD/SMT TO-263-7 1 Channel 1700 V 4.4 A 1.25 Ohms - 8 V, + 20 V 4.2 V 8 nC - 55 C + 175 C 41 W Enhancement
Infineon Technologies MOSFET SiC CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 1 123A magazzino
75007.01.2027 previsto
Nastro continuo
11.79 CHF
6.83 CHF
6.70 CHF
Nastrati
6.38 CHF
Min: 1
Mult.: 1
: 750
SMD/SMT PG-HDSOP-22-U03 1 Channel 1.2 kV 82 A 67 mOhms - 10 V, + 25 V 5.1 V 63.4 nC - 55 C + 175 C 405 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 1 507A magazzino
750In ordine
Nastro continuo
9.99 CHF
7.23 CHF
6.02 CHF
5.37 CHF
Nastrati
5.02 CHF
Min: 1
Mult.: 1
: 750
SMD/SMT PG-HDSOP-22-U03 1 Channel 1.2 kV 64 A 89 mOhms - 10 V, + 25 C 5.1 V 48.7 nC - 55 C + 175 C 326 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 675A magazzino
Nastro continuo
9.29 CHF
5.20 CHF
5.01 CHF
4.68 CHF
Nastrati
4.68 CHF
Min: 1
Mult.: 1
: 750
SMD/SMT PG-HDSOP-22-U03 1 Channel 1.2 kV 56 A 104 mOhms - 10 V, + 25 V 5.1 V 42.4 nC - 55 C + 175 C 288 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 314A magazzino
75030.11.2026 previsto
Nastro continuo
7.80 CHF
4.29 CHF
3.99 CHF
3.72 CHF
Nastrati
3.72 CHF
Min: 1
Mult.: 1
: 750
SMD/SMT PG-HDSOP-22-U03 1 Channel 1.2 kV 43 A 138 mOhms - 10 V, + 25 V 5.1 V 32.8 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 2 150A magazzino
Nastro continuo
6.85 CHF
3.72 CHF
3.42 CHF
3.34 CHF
Nastrati
3.14 CHF
Min: 1
Mult.: 1
: 750
SMD/SMT PG-HDSOP-22-U03 1 Channel 1.2 kV 31 A 205 mOhms - 10 V, + 25 V 5.1 V 23.2 nC - 55 C + 175 C 176 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1200 V SiC MOSFET G2 228A magazzino
24030.11.2026 previsto
23.03 CHF
18.44 CHF
15.95 CHF
15.10 CHF
Min: 1
Mult.: 1
Through Hole PG-TO247-4-U02 1 Channel 1.2 kV 16 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 480 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1200 V SiC MOSFET G2 267A magazzino
15.32 CHF
11.67 CHF
9.73 CHF
8.66 CHF
8.10 CHF
Min: 1
Mult.: 1
Through Hole PG-TO247-4-U02 1 Channel 1.2 kV 80 A 29 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1200 V SiC MOSFET G2 310A magazzino
12.73 CHF
9.69 CHF
8.08 CHF
7.20 CHF
6.12 CHF
Min: 1
Mult.: 1
Through Hole PG-TO247-4-U02 1 Channel 1.2 kV 69 A 34 mOhms - 10 V, + 25 V 5.1 V 60 nC - 55 C + 175 C 289 W Enhancement CoolSiC
IXYS MOSFET SiC 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L 900A magazzino
Nastro continuo
10.45 CHF
5.92 CHF
5.84 CHF
5.53 CHF
Nastrati
5.53 CHF
Min: 1
Mult.: 1
: 800
SMD/SMT TO-263-7L 1 Channel 650 V 111 A 33 mOhms - 5 V, + 20 V 4.5 V 125 nC - 55 C + 175 C 600 W Enhancement