SiC MOSFETs

GeneSiC Semiconductor’s G3R™ Silicon Carbide (SiC) MOSFETs offer RDS(ON) levels from 12mΩ to 1000mΩ and robustness for efficiency and system reliability in automotive and industrial applications. These MOSFETs deliver a fast switching frequency, increased power density, reduced ringing (EMI), and a compact size. The G3R SiC MOSFETs are offered in optimized low-inductance discrete packages (SMD and through-hole). The modules are highly optimized for power system designs that require elevated efficiency levels at all operating temperatures and ultra-fast switching speeds with ultra-low losses. GeneSiC SiC MOSFETs provide faster switching and lower ON resistance than silicon-based products. Additional features include superior electric characteristics at high temperatures and significantly lower switching loss, allowing smaller peripheral components to be used.

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Menge RoHS ECAD Model Montageart
Verpackung/Gehäuse
Anzahl der Kanäle
Vds - Drain-Source-Durchschlagspannung
Id - Drain-Gleichstrom
Rds On - Drain-Source-Widerstand
Vgs - Gate-Source-Spannung
Vgs th - Gate-Source-Schwellspannung
Qg - Gate-Ladung
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Pd - Verlustleistung
Kanalmodus
GeneSiC Semiconductor SiC-MOSFETs 1200V 12mohm TO-247-4 G3R SiC MOSFET
Datenblatt
1 674Auf Lager
52.33 CHF
49.94 CHF
46.53 CHF
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 111 A 12 mOhms - 10 V, + 22 V 2.7 V 288 nC - 55 C + 175 C 567 W Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1700V 20mohm TO-247-4 G3R SiC MOSFET
Datenblatt
77Auf Lager
150erwartet ab 23.03.2027
94.94 CHF
93.41 CHF
84.64 CHF
83.58 CHF
Anzeigen
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.7 kV 101 A 20 mOhms - 5 V, + 15 V 2.7 V 256 nC - 55 C + 175 C 569 W Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1200V 30mohm TO-247-4 G3R SiC MOSFET
Datenblatt
289Auf Lager
24.42 CHF
24.24 CHF
16.12 CHF
15.71 CHF
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 70 A 30 mOhms - 5 V, + 15 V 2.7 V 118 nC - 55 C + 175 C 281 W Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1700V 45mohm TO-247-4 G3R SiC MOSFET
Datenblatt
109Auf Lager
32.98 CHF
24.20 CHF
23.94 CHF
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Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.7 kV 48 A 45 mOhms - 5 V, + 15 V 2.7 V 106 nC - 55 C + 175 C 284 W Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1700V 160mohm TO-247-3 G3R SiC MOSFET
Datenblatt
5Auf Lager
1 800Auf Bestellung
16.16 CHF
14.46 CHF
9.12 CHF
8.33 CHF
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.7 kV 17 A 160 mOhms - 5 V, + 15 V 2.7 V 29 nC - 55 C + 175 C 138 W Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1700V 450mohm TO-247-3 G3R SiC MOSFET
Datenblatt
1 740Auf Bestellung
8.18 CHF
5.01 CHF
4.69 CHF
4.50 CHF
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Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.7 kV 7 A 450 mOhms - 5 V, + 15 V 2.7 V 13 nC - 55 C + 175 C 70 W Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1700V 450mohm TO-263-7 G3R SiC MOSFET
Datenblatt
800Auf Lager
Cut-Tape
8.04 CHF
5.84 CHF
5.61 CHF
5.26 CHF
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Reel
4.90 CHF
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7 1 Channel 1.7 kV 8 A 630 mOhms - 5 V, + 15 V 2.7 V 13 nC - 55 C + 175 C 71 W Enhancement
GeneSiC Semiconductor SiC-MOSFETs 1200V 40mohm TO-247-4 G3R SiC MOSFET
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 26 Wochen
20.38 CHF
20.16 CHF
12.96 CHF
12.30 CHF
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A 40 mOhms - 5 V, + 15 V 2.7 V 88 nC - 55 C + 175 C 228 W Enhancement