200V to 250V HEXFET® Power MOSFETs

Infineon 200V to 250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.

Risultati: 26
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (CHF) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Confezione

Infineon Technologies MOSFET MOSFT 200V 49A 40mOhm 156nCAC 23 097A magazzino
3.19 CHF
1.62 CHF
1.35 CHF
1.14 CHF
1.13 CHF
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 50 A 40 mOhms 20 V 4 V 156 nC - 55 C + 175 C 300 W Enhancement Tube

Infineon Technologies MOSFET MOSFT 200V 30A 75mOhm 82nCAC 5 415A magazzino
2.58 CHF
1.29 CHF
1.06 CHF
0.91 CHF
Min: 1
Mult.: 1
Max.: 500
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 30 A 75 mOhms 20 V 4 V 82 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies IRFB4332PBFXKMA1
Infineon Technologies MOSFET TRENCH >=100V 299A magazzino
Nastro continuo
4.34 CHF
2.27 CHF
2.06 CHF
1.72 CHF
Nastrati
1.72 CHF
Min: 1
Mult.: 1
: 1 000
Reel, Cut Tape

Infineon Technologies MOSFET IR FET >60-400V 870A magazzino
80012.11.2026 previsto
5.99 CHF
3.21 CHF
2.95 CHF
2.94 CHF
2.66 CHF
Min: 1
Mult.: 1
Si Through Hole TO-247AC-3 N-Channel 1 Channel 250 V 93 A 17.5 mOhms 20 V 5 V 180 nC - 55 C + 175 C 520 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 76A 23.2mOhm 100nC Qg 7 817A magazzino
Nastro continuo
4.24 CHF
2.21 CHF
2.01 CHF
1.68 CHF
Nastrati
1.68 CHF
Min: 1
Mult.: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 72 A 22 mOhms 20 V 1.8 V 100 nC - 55 C + 175 C 375 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 200V 62A 26mOhm 70nC Qg 8 524A magazzino
7 200In ordine
Nastro continuo
3.68 CHF
1.89 CHF
1.71 CHF
1.38 CHF
Nastrati
1.38 CHF
Min: 1
Mult.: 1
Max.: 2 400
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 62 A 26 mOhms 30 V 5 V 70 nC - 40 C + 175 C 330 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies IRFB4227PBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V 4 406A magazzino
4 00007.10.2026 previsto
2.86 CHF
1.44 CHF
1.30 CHF
1.06 CHF
Min: 1
Mult.: 1
Si Tube
Infineon Technologies IRFP4668PBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V 13 557A magazzino
28 400In ordine
5.93 CHF
3.18 CHF
2.91 CHF
2.62 CHF
Min: 1
Mult.: 1
Si Through Hole TO-247AC-3 N-Channel 1 Channel 200 V 130 A 9.7 mOhms 30 V 3 V 161 nC - 55 C + 175 C 520 W Enhancement Tube
Infineon Technologies MOSFET IR FET >60-400V 714A magazzino
5 000In ordine
4.15 CHF
2.15 CHF
1.96 CHF
1.62 CHF
Min: 1
Mult.: 1
Si Through Hole TO-220AB-3 N-Channel 1 Channel 200 V 76 A 20 mOhms 20 V 5 V 69 nC - 55 C + 175 C 375 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 0.6A 2200mOhm 3.9nC 21 207A magazzino
Nastro continuo
0.612 CHF
0.276 CHF
0.243 CHF
0.185 CHF
Nastrati
0.141 CHF
Min: 1
Mult.: 1
: 3 000
Si SMD/SMT TSOP-6 N-Channel 1 Channel 200 V 600 mA 2.2 Ohms 30 V 2 V 3.9 nC - 55 C + 150 C 2 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 200V 18A 150mOhm 44.7nC 30 167A magazzino
18 00028.01.2027 previsto
1.66 CHF
0.877 CHF
0.674 CHF
0.53 CHF
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 18 A 150 mOhms 20 V 2 V 44.7 nC - 55 C + 175 C 150 W Enhancement Tube

Infineon Technologies MOSFET 200V, 3.7A, 78 mOhm 29 nC Qg, SO-8 2 497A magazzino
4 00008.10.2026 previsto
Nastro continuo
1.95 CHF
0.945 CHF
0.854 CHF
0.679 CHF
Nastrati
0.58 CHF
Min: 1
Mult.: 1
: 4 000
Si SMD/SMT SOIC-8 N-Channel 1 Channel 200 V 3.7 A 78 mOhms 20 V 4 V 28 nC - 55 C + 150 C 2.5 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 200V 44A 54mOhm 60nC 4 279A magazzino
2.34 CHF
1.29 CHF
1.03 CHF
0.964 CHF
0.679 CHF
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 44 A 54 mOhms 30 V 1.8 V 91 nC - 55 C + 175 C 3.8 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud 8 265A magazzino
2.08 CHF
1.01 CHF
0.854 CHF
0.716 CHF
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 18 A 100 mOhms 20 V 1.8 V 18 nC - 55 C + 175 C 100 W Enhancement Tube

Infineon Technologies MOSFET MOSFT 200V 49A 40mOhm 156nCAC 3 361A magazzino
3 20022.10.2026 previsto
3.15 CHF
1.97 CHF
1.60 CHF
1.30 CHF
1.15 CHF
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 50 A 40 mOhms 20 V 1.8 V 156 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 44A 54mOhm 60nC 2 713A magazzino
Nastro continuo
3.58 CHF
1.84 CHF
1.68 CHF
1.34 CHF
Nastrati
1.34 CHF
Min: 1
Mult.: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 44 A 54 mOhms 30 V 5 V 60 nC - 55 C + 175 C 320 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 250V 45A 48mOhm 72nC Qg 6 031A magazzino
Nastro continuo
3.73 CHF
1.92 CHF
1.74 CHF
1.40 CHF
Nastrati
1.40 CHF
Min: 1
Mult.: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 250 V 45 A 48 mOhms 30 V 5 V 72 nC - 40 C + 175 C 330 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 200V 24A 78mOhm 25nC Qg 2 372A magazzino
38 400In ordine
Nastro continuo
2.79 CHF
1.40 CHF
1.26 CHF
Nastrati
0.945 CHF
Min: 1
Mult.: 1
Max.: 3 000
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 24 A 77.5 mOhms 20 V 5 V 38 nC - 55 C + 175 C 144 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies IRFP4227PBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V 468A magazzino
2 00013.10.2026 previsto
4.94 CHF
2.60 CHF
2.42 CHF
2.05 CHF
Min: 1
Mult.: 1
Si Tube
Infineon Technologies IRFB4229PBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V 822A magazzino
2 000In ordine
3.58 CHF
1.83 CHF
1.66 CHF
1.52 CHF
Min: 1
Mult.: 1
Si Through Hole TO-220AB-3 N-Channel 1 Channel 250 V 46 A 46 mOhms 30 V 5 V 72 nC - 40 C + 175 C 330 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC 65A magazzino
10 00028.01.2027 previsto
1.11 CHF
0.518 CHF
0.46 CHF
0.358 CHF
0.357 CHF
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 9.3 A 300 mOhms 20 V 2 V 23.3 nC - 55 C + 175 C 82 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 18A 150mOhm 44.7nC 242A magazzino
36 800In ordine
Nastro continuo
1.70 CHF
0.821 CHF
0.733 CHF
0.651 CHF
Nastrati
0.54 CHF
0.501 CHF
Min: 1
Mult.: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 18 A 150 mOhms 20 V 2 V 44.7 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 200V 24A 78mOhm 25nC Qg 1 447A magazzino
24 000In ordine
Nastro continuo
2.18 CHF
1.08 CHF
0.901 CHF
0.775 CHF
0.761 CHF
Nastrati
0.672 CHF
Min: 1
Mult.: 1
: 3 000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 200 V 24 A 78 mOhms 20 V 1.8 V 25 nC - 55 C + 175 C 144 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET MOSFT 200V 30A 75mOhm 82nCAC
42 780In ordine
2.36 CHF
1.37 CHF
1.13 CHF
0.964 CHF
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 30 A 75 mOhms 20 V 1.8 V 82 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies IRFP4229PBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V 800A magazzino
4.86 CHF
2.56 CHF
2.32 CHF
1.92 CHF
Min: 1
Mult.: 1
Si Through Hole TO-247AC-3 N-Channel 1 Channel 250 V 44 A 46 mOhms 30 V 5 V 72 nC - 40 C + 175 C 310 W Enhancement Tube