STPSC20G12 Silicon Carbide Power Schottky Diodes

STMicroelectronics STPSC20G12 Silicon Carbide Power Schottky Diodes are available in a DO-247 package with long leads. The STMicroelectronics STPSC20G12 is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200V rating. Thanks to the Schottky construction, no recovery is shown during turn-off, and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Results: 3
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (CHF) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Configuration
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
STMicroelectronics SiC Schottky Diodes Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode
Datasheet
561In Stock
10.04 CHF
6.47 CHF
5.64 CHF
5.19 CHF
Min.: 1
Mult.: 1
Through Hole DO-247-2 Single 20 A 1.2 kV 1.35 V 180 A 10 uA - 55 C + 175 C AEC-Q101 Tube
STMicroelectronics SiC Schottky Diodes Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode
Datasheet
1 852In Stock
Cut Tape
10.84 CHF
8.08 CHF
6.74 CHF
Reel
6.00 CHF
5.61 CHF
MouseReel Available
Min.: 1
Mult.: 1
: 600
SMD/SMT HU3PAK-9 Single 20 A 1.2 kV 1.35 V 1.1 kA 10 uA - 55 C + 175 C AEC-Q101 Reel, Cut Tape, MouseReel
STMicroelectronics SiC Schottky Diodes 1200 V, 20 A High surge Silicon Carbide Power Schottky Diode
Datasheet
450In Stock
9.66 CHF
6.00 CHF
5.52 CHF
4.47 CHF
View
Min.: 1
Mult.: 1
Through Hole DO-247-2 Single 20 A 1.2 kV 1.35 V 180 A 10 uA - 55 C + 175 C Tube