Risultati: 40
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (CHF) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Nome commerciale Confezione

IXYS MOSFET High Voltage Power MOSFET 248A magazzino
12.87 CHF
7.55 CHF
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 2.5 A 6 Ohms 30 V 5 V 44.5 nC - 55 C + 150 C 110 W Enhancement Tube
IXYS MOSFET 6 Amps 1200V 2.700 Rds 274A magazzino
13.96 CHF
8.39 CHF
Min: 1
Mult.: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.2 kV 6 A 2.6 Ohms 20 V 5 V 56 nC - 55 C + 150 C 300 W Enhancement Tube
IXYS MOSFET 0.75 Amps 1000V 15 Rds 549A magazzino
3.75 CHF
1.93 CHF
1.75 CHF
1.52 CHF
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 750 mA 17 Ohms 30 V 4.5 V 7.8 nC - 55 C + 150 C 40 W Enhancement Tube

IXYS MOSFET 1 157A magazzino
18.80 CHF
13.76 CHF
13.48 CHF
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 16 A 950 mOhms 30 V 3.5 V 120 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFET TO268 1.5KV 12A N-CH HIVOLT 261A magazzino
56.78 CHF
44.81 CHF
43.55 CHF
Min: 1
Mult.: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.5 kV 12 A 2.2 Ohms 30 V 2.5 V 106 nC - 55 C + 150 C 890 W Enhancement Tube

IXYS MOSFET High Voltage Power MOSFET 165A magazzino
10.38 CHF
6.81 CHF
6.33 CHF
5.71 CHF
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 4 A 6 Ohms 30 V 2.5 V 44.5 nC - 55 C + 150 C 280 W Enhancement Tube

IXYS MOSFET 3 Amps 1200V 4.500 Rds 211A magazzino
9015.12.2026 previsto
9.57 CHF
6.16 CHF
5.67 CHF
5.09 CHF
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 4.5 V 39 nC - 55 C + 150 C 150 W Enhancement Tube
IXYS MOSFET 0.5 Amps 1000V 300A magazzino
4.84 CHF
2.55 CHF
2.23 CHF
2.13 CHF
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 700 mA 15 Ohms 30 V 4.5 V 7.8 nC - 55 C + 150 C 25 W Enhancement Tube
IXYS MOSFET High Voltage Power MOSFET 2 247A magazzino
5.55 CHF
2.96 CHF
2.95 CHF
2.70 CHF
2.50 CHF
Min: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 750 mA 17 Ohms 30 V 2.5 V 7.8 nC - 55 C + 150 C 40 W Enhancement Tube
IXYS MOSFET TO263 1.5KV 3A N-CH HIVOLT 192A magazzino
30025.11.2026 previsto
12.81 CHF
7.46 CHF
7.25 CHF
Min: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.5 kV 3 A 7.3 Ohms 30 V 2.5 V 38.6 nC - 55 C + 150 C 250 W Enhancement Tube
IXYS MOSFET MOSFET Id3 BVdass1200 629A magazzino
8.66 CHF
5.35 CHF
4.94 CHF
4.72 CHF
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 2.5 V 42 nC - 55 C + 150 C 200 W Enhancement Tube
IXYS MOSFET 1500V High Voltage Power MOSFET 310A magazzino
17.03 CHF
10.82 CHF
Min: 1
Mult.: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.2 kV 12 A 2 Ohms 30 V 4.5 V 106 nC - 55 C + 150 C 890 W Enhancement Tube

IXYS MOSFET 1500 V High Voltage Power MOSFET 295A magazzino
30023.03.2027 previsto
27.91 CHF
21.24 CHF
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 20 A 1 Ohms 30 V 4.5 V 215 nC - 55 C + 150 C 1.25 kW Enhancement Tube
IXYS MOSFET TO263 1.2KV 3A N-CH HIVOLT 14A magazzino
35009.02.2027 previsto
9.04 CHF
5.17 CHF
4.76 CHF
4.70 CHF
Min: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 2.5 V 42 nC - 55 C + 150 C 200 W Enhancement Tube
IXYS MOSFET TO263 150V 4A N-CH HIVOLT 83A magazzino
13.05 CHF
7.55 CHF
7.39 CHF
Min: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.5 kV 4 A 6 Ohms 30 V 2.5 V 375 nC - 55 C + 150 C 280 W Enhancement Tube

IXYS MOSFET High Voltage Power MOSFET 1A magazzino
14.94 CHF
8.55 CHF
8.49 CHF
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 3 A 7.3 Ohms 30 V 2.5 V 38.6 nC - 55 C + 150 C 250 W Enhancement Tube

IXYS MOSFET 6 Amps 1200V 2.700 Rds 96A magazzino
8.39 CHF
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 6 A 2.4 Ohms 20 V 2.5 V 56 nC - 55 C + 150 C 300 W Enhancement Tube
IXYS MOSFET 0.1 Amps 1000V 80 Rds 300A magazzino
3.35 CHF
1.75 CHF
1.57 CHF
1.35 CHF
1.34 CHF
Min: 1
Mult.: 1
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 1 kV 100 mA 80 Ohms 20 V - 55 C + 150 C 25 W Enhancement Tube
IXYS MOSFET 3 Amps 1200V 4.5 Rds 962A magazzino
1 55002.03.2027 previsto
8.26 CHF
5.01 CHF
4.72 CHF
Min: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 2.5 V 42 nC - 55 C + 150 C 150 W Enhancement Tube

IXYS MOSFET >1200V High Voltage Power MOSFET 275A magazzino
17.48 CHF
11.81 CHF
10.78 CHF
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 12 A 2 Ohms 30 V 4.5 V 106 nC - 55 C + 150 C 890 W Enhancement Tube
IXYS MOSFET 0.75 Amps 1000V 15 Rds 800Disponibile a magazzino presso produttore
2.56 CHF
Min: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 750 mA 17 Ohms 30 V 4.5 V 7.8 nC - 55 C + 150 C 40 W Enhancement Tube

IXYS MOSFET HIGH VOLT PWR MOSFET 1500V 6A Tempo di consegna, se non a magazzino 32 settimane
13.54 CHF
8.86 CHF
7.55 CHF
Min: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 6 A 3.5 Ohms 20 V 5 V 67 nC - 55 C + 150 C 540 W Enhancement Tube

IXYS MOSFET High Voltage Power MOSFET Tempo di consegna, se non a magazzino 24 settimane
9.64 CHF
9.58 CHF
Min: 300
Mult.: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 3 A 3.85 Ohms 30 V 2.5 V 67 nC - 55 C + 150 C 125 W Enhancement Tube
IXYS MOSFET 1200V High Voltage Power MOSFET Tempo di consegna, se non a magazzino 24 settimane
52.87 CHF
45.93 CHF
41.07 CHF
Min: 1
Mult.: 1
Si Through Hole TO-264-3 N-Channel 1.5 kV 20 A 1 Ohms Tube
IXYS MOSFET 2 Amps 800V 6.2 Rds Non disponibile a magazzino
2.22 CHF
1.64 CHF
1.38 CHF
1.28 CHF
1.20 CHF
Min: 50
Mult.: 50
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 2 A 6.2 Ohms 20 V - 55 C + 150 C 54 W Enhancement Tube