|
|
MOSFET IFX FET 15V-30V
- IQE008N03LM5CGATMA1
- Infineon Technologies
-
1:
2.29 CHF
-
2 082A magazzino
|
Codice Mouser
726-IQE008N03LM5CGAT
|
Infineon Technologies
|
MOSFET IFX FET 15V-30V
|
|
2 082A magazzino
|
|
Min: 1
Mult.: 1
:
5 000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
30 V
|
253 A
|
850 uOhms
|
16 V
|
2 V
|
64 nC
|
- 55 C
|
+ 150 C
|
89 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET OptiMOS 5 low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down center-gate package with best-price performance
- IQE012N03LM5CGATMA1
- Infineon Technologies
-
1:
2.12 CHF
-
4 000A magazzino
-
Nuovo prodotto
|
Codice Mouser
726-IQE012N03LM5CGAT
Nuovo prodotto
|
Infineon Technologies
|
MOSFET OptiMOS 5 low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down center-gate package with best-price performance
|
|
4 000A magazzino
|
|
Min: 1
Mult.: 1
:
5 000
|
|
|
Si
|
SMD/SMT
|
TTFN-9
|
N-Channel
|
1 Channel
|
30 V
|
224 A
|
1.15 mOhms
|
16 V
|
2 V
|
40 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET IFX FET 15V-30V
- IQE006NE2LM5SCATMA1
- Infineon Technologies
-
1:
2.27 CHF
-
6 109A magazzino
-
12 00012.11.2026 previsto
|
Codice Mouser
726-IQE006NE2LM5SCAT
|
Infineon Technologies
|
MOSFET IFX FET 15V-30V
|
|
6 109A magazzino
12 00012.11.2026 previsto
|
|
Min: 1
Mult.: 1
:
6 000
|
|
|
Si
|
SMD/SMT
|
WHSON-8
|
N-Channel
|
1 Channel
|
25 V
|
47 A
|
580 uOhms
|
16 V
|
2 V
|
82 nC
|
- 55 C
|
+ 150 C
|
2.1 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET IFX FET 15V-30V
- BSC0504NSIATMA1
- Infineon Technologies
-
1:
0.964 CHF
-
18 605A magazzino
|
Codice Mouser
726-BSC0504NSIATMA1
|
Infineon Technologies
|
MOSFET IFX FET 15V-30V
|
|
18 605A magazzino
|
|
Min: 1
Mult.: 1
:
5 000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
72 A
|
3.7 mOhms
|
20 V
|
1.2 V
|
11.1 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
- BSC0901NSATMA1
- Infineon Technologies
-
1:
1.61 CHF
-
6 779A magazzino
-
10 00028.01.2027 previsto
|
Codice Mouser
726-BSC0901NSATMA1
|
Infineon Technologies
|
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
|
|
6 779A magazzino
10 00028.01.2027 previsto
|
|
Min: 1
Mult.: 1
:
5 000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
1.6 mOhms
|
20 V
|
1.2 V
|
44 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
- BSZ0904NSIATMA1
- Infineon Technologies
-
1:
1.15 CHF
-
13 991A magazzino
|
Codice Mouser
726-BSZ0904NSIATMA1
|
Infineon Technologies
|
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
|
|
13 991A magazzino
|
|
Min: 1
Mult.: 1
:
5 000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
40 A
|
4.6 mOhms
|
20 V
|
2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
37 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET IFX FET 15V-30V
- IQE008N03LM5ATMA1
- Infineon Technologies
-
1:
2.93 CHF
-
3 913A magazzino
|
Codice Mouser
726-IQE008N03LM5ATMA
|
Infineon Technologies
|
MOSFET IFX FET 15V-30V
|
|
3 913A magazzino
|
|
Min: 1
Mult.: 1
:
5 000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
30 V
|
253 A
|
850 uOhms
|
16 V
|
2 V
|
64 nC
|
- 55 C
|
+ 150 C
|
89 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET IFX FET 15V-30V
- BSZ009NE2LS5ATMA1
- Infineon Technologies
-
1:
2.54 CHF
-
110A magazzino
-
10 00029.07.2027 previsto
|
Codice Mouser
726-BSZ009NE2LS5ATMA
|
Infineon Technologies
|
MOSFET IFX FET 15V-30V
|
|
110A magazzino
10 00029.07.2027 previsto
|
|
Min: 1
Mult.: 1
:
5 000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
25 V
|
40 A
|
960 uOhms
|
16 V
|
2 V
|
92 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
- BSZ065N03LSATMA1
- Infineon Technologies
-
1:
0.877 CHF
-
4 170A magazzino
-
5 00019.11.2026 previsto
|
Codice Mouser
726-BSZ065N03LSATMA1
|
Infineon Technologies
|
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
|
|
4 170A magazzino
5 00019.11.2026 previsto
|
|
Min: 1
Mult.: 1
:
5 000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
49 A
|
6.5 mOhms
|
20 V
|
2 V
|
10 nC
|
- 55 C
|
+ 150 C
|
26 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
- BSC011N03LSATMA1
- Infineon Technologies
-
1:
1.83 CHF
-
59 350In ordine
|
Codice Mouser
726-BSC011N03LSATMA1
|
Infineon Technologies
|
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
|
|
59 350In ordine
In ordine:
9 350 07.01.2027 previsto
10 000 28.01.2027 previsto
15 000 06.05.2027 previsto
25 000 12.08.2027 previsto
Tempo di consegna da parte della fabbrica:
52 settimane
|
|
Min: 1
Mult.: 1
:
5 000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
230 A
|
1.1 mOhms
|
20 V
|
2 V
|
72 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
- BSZ019N03LSATMA1
- Infineon Technologies
-
1:
1.74 CHF
-
29 503In ordine
|
Codice Mouser
726-BSZ019N03LSATMA1
|
Infineon Technologies
|
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
|
|
29 503In ordine
In ordine:
9 503 06.05.2027 previsto
20 000 30.09.2027 previsto
Tempo di consegna da parte della fabbrica:
52 settimane
|
|
Min: 1
Mult.: 1
:
5 000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
149 A
|
2 mOhms
|
20 V
|
2 V
|
44 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET IFX FET 15V-30V
- BSZ0506NSATMA1
- Infineon Technologies
-
1:
1.29 CHF
-
47 193In ordine
|
Codice Mouser
726-BSZ0506NSATMA1
|
Infineon Technologies
|
MOSFET IFX FET 15V-30V
|
|
47 193In ordine
In ordine:
7 193 01.04.2027 previsto
20 000 22.04.2027 previsto
20 000 02.09.2027 previsto
Tempo di consegna da parte della fabbrica:
52 settimane
|
|
Min: 1
Mult.: 1
:
5 000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
40 A
|
4.4 mOhms
|
20 V
|
2 V
|
11 nC
|
- 55 C
|
+ 150 C
|
27 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET IFX FET 15V-30V
- IQDH29NE2LM5CGATMA1
- Infineon Technologies
-
1:
3.74 CHF
-
9 928In ordine
|
Codice Mouser
726-IQDH29NE2LM5CGAT
|
Infineon Technologies
|
MOSFET IFX FET 15V-30V
|
|
9 928In ordine
In ordine:
4 928 23.09.2027 previsto
5 000 30.09.2027 previsto
Tempo di consegna da parte della fabbrica:
52 settimane
|
|
Min: 1
Mult.: 1
:
5 000
|
|
|
Si
|
SMD/SMT
|
TTFN-9
|
N-Channel
|
1 Channel
|
25 V
|
789 A
|
290 uOhms
|
16 V
|
2 V
|
88 nC
|
- 55 C
|
+ 150 C
|
333 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET IFX FET 15V-30V
- IQDH35N03LM5CGATMA1
- Infineon Technologies
-
1:
3.99 CHF
-
19 83402.09.2027 previsto
|
Codice Mouser
726-IQDH35N03LM5CGAT
|
Infineon Technologies
|
MOSFET IFX FET 15V-30V
|
|
19 83402.09.2027 previsto
|
|
Min: 1
Mult.: 1
:
5 000
|
|
|
Si
|
SMD/SMT
|
TTFN-9
|
N-Channel
|
1 Channel
|
30 V
|
700 A
|
350 uOhms
|
20 V
|
2 V
|
91 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET OptiMOS 5 25 V Power Block in 5x6 mm
- BSG0812NDATMA1
- Infineon Technologies
-
1:
2.61 CHF
-
4 99712.08.2027 previsto
|
Codice Mouser
726-BSG0812NDATMA1
|
Infineon Technologies
|
MOSFET OptiMOS 5 25 V Power Block in 5x6 mm
|
|
4 99712.08.2027 previsto
|
|
Min: 1
Mult.: 1
:
5 000
|
|
|
Si
|
SMD/SMT
|
TISON-8
|
N-Channel
|
2 Channel
|
25 V
|
50 A
|
900 mOhms, 3.5 mOhms
|
16 V
|
2 V
|
5.6 nC
|
- 55 C
|
+ 150 C
|
6.25 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET IFX FET 15V-30V
- IQE006NE2LM5CGSCATMA1
- Infineon Technologies
-
1:
3.11 CHF
-
5 84128.01.2027 previsto
|
Codice Mouser
726-IQE006NE2LM5CGSC
|
Infineon Technologies
|
MOSFET IFX FET 15V-30V
|
|
5 84128.01.2027 previsto
|
|
Min: 1
Mult.: 1
:
6 000
|
|
|
Si
|
SMD/SMT
|
WHTFN-9
|
N-Channel
|
1 Channel
|
25 V
|
47 A
|
580 uOhms
|
16 V
|
2 V
|
82 nC
|
- 55 C
|
+ 150 C
|
2.1 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET OptiMOS 5 low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down dual-side cooled package with best-price performance
- IQE012N03LM5CGSCATMA1
- Infineon Technologies
-
1:
2.50 CHF
-
6 00028.01.2027 previsto
-
Nuovo prodotto
|
Codice Mouser
726-IQE012N03LM5CGSC
Nuovo prodotto
|
Infineon Technologies
|
MOSFET OptiMOS 5 low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down dual-side cooled package with best-price performance
|
|
6 00028.01.2027 previsto
|
|
Min: 1
Mult.: 1
:
6 000
|
|
|
Si
|
SMD/SMT
|
WHTFN-9
|
N-Channel
|
1 Channel
|
30 V
|
224 A
|
1.15 mOhms
|
16 V
|
2 V
|
40 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape
|
|