Diodi a barriera SCHOTTKY ad alta efficienza YQx

I diodi Schottky a barriera ad alta efficienza YQx di ROHM Semiconductor sono progettati per migliorare il compromesso tra bassa VF e bassa IR. Nonostante i bassi valori di VF, questi dispositivi offrono prestazioni stabili anche quando sottoposti a temperature più elevate. Questi diodi a barriera SCHOTTKY di tipo a stampo ad alta efficienza presentano strutture MOS a trincea. I diodi a barriera SCHOTTKY YQx offrono tensione inversa di 100 V, alta affidabilità e basse capacitanze. Questi dispositivi sono ideali per alimentatori a commutazione, diodi a ruota libera e applicazioni di protezione da polarità inversa.

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Descrizione Scheda dati Disponibilità Prezzi (CHF) Filtra i risultati nella tabella per prezzo unitario in base alla quantità.
Qtà RoHS Modello ECAD Prodotto
Stile di montaggio
Package/involucro
Configurazione
Tecnologia
If - Corrente diretta
Vrrm - Tensione inversa ripetitiva
Vf - Tensione diretta
Ifsm - Sovracorrente diretta
Ir - Corrente inversa
Temperatura di lavoro massima
Qualifica
Confezione
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Schottky Diodes SMD/SMT TO-263FL-3 Dual Anode Common Cathode Si 60 A 100 V 700 mV 150 A 200 uA + 150 C Reel, Cut Tape
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ROHM Semiconductor Diodi e raddrizzatori Schottky RECT 100V 3A SM SKY BARRI
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Schottky Diodes SMD/SMT PMDE-2 Single Si 3 A 100 V 880 mV 30 A 10 uA + 175 C Reel, Cut Tape
ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
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Schottky Diodes SMD/SMT TO-252-3 Single Si 20 A 100 V 790 mV 150 A 80 uA + 150 C Reel, Cut Tape
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Schottky Diodes SMD/SMT TO-277A-3 Dual Anode Common Cathode Si 10 A 100 V 610 mV 200 A 80 uA + 175 C Reel, Cut Tape
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Schottky Diodes SMD/SMT TO-277A-3 Dual Anode Common Cathode Si 12 A 100 V 630 mV 220 A 90 uA + 175 C Reel, Cut Tape
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