Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
YQ20BM10SDFHTL
ROHM Semiconductor
1:
1.65 CHF
4 500 A magazzino
Codice Mouser 755-YQ20BM10SDFHTL
ROHM Semiconductor
Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
4 500 A magazzino
1
1.65 CHF
10
1.05 CHF
100
0.737 CHF
500
0.60 CHF
2 500
0.496 CHF
5 000
Visualizza
1 000
0.547 CHF
5 000
0.492 CHF
Acquista
Min: 1 Mult.: 1
Nastrati :2 500
Dettagli
Schottky Diodes
SMD/SMT
TO-252-3
Single
Si
20 A
100 V
790 mV
150 A
80 uA
+ 150 C
Reel, Cut Tape
Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
YQ10RSM10SDTFTL1
ROHM Semiconductor
1:
1.79 CHF
2 583 A magazzino
Codice Mouser 755-YQ10RSM10SDTFTL1
ROHM Semiconductor
Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
2 583 A magazzino
1
1.79 CHF
10
1.15 CHF
100
0.774 CHF
500
0.616 CHF
1 000
Visualizza
4 000
0.513 CHF
1 000
0.565 CHF
2 000
0.533 CHF
4 000
0.513 CHF
Acquista
Min: 1 Mult.: 1
Nastrati :4 000
Dettagli
Schottky Diodes
SMD/SMT
TO-277A-3
Dual Anode Common Cathode
Si
10 A
100 V
610 mV
200 A
80 uA
+ 175 C
Reel, Cut Tape
Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
YQ20NL10CDFHTL
ROHM Semiconductor
1:
2.75 CHF
1 900 A magazzino
Codice Mouser 755-YQ20NL10CDFHTL
ROHM Semiconductor
Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
1 900 A magazzino
1
2.75 CHF
10
1.79 CHF
100
1.24 CHF
500
1.00 CHF
1 000
0.92 CHF
2 000
0.912 CHF
Acquista
Min: 1 Mult.: 1
Nastrati :1 000
Dettagli
Schottky Diodes
SMD/SMT
TO-263L-3
Dual Anode Common Cathode
Si
20 A
100 V
650 mV
150 A
70 uA
+ 150 C
Reel, Cut Tape, MouseReel
Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
YQ20NL10SEFHTL
ROHM Semiconductor
1:
2.42 CHF
2 000 A magazzino
Codice Mouser 755-YQ20NL10SEFHTL
ROHM Semiconductor
Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
2 000 A magazzino
1
2.42 CHF
10
1.56 CHF
100
1.08 CHF
500
0.872 CHF
1 000
0.809 CHF
2 000
0.788 CHF
Acquista
Min: 1 Mult.: 1
Nastrati :1 000
Dettagli
Schottky Diodes
SMD/SMT
TO-263L-3
Single
Si
20 A
100 V
790 mV
200 A
80 uA
+ 150 C
Reel, Cut Tape
Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
YQ30NL10SEFHTL
ROHM Semiconductor
1:
2.67 CHF
1 244 A magazzino
Codice Mouser 755-YQ30NL10SEFHTL
ROHM Semiconductor
Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
1 244 A magazzino
1
2.67 CHF
10
1.74 CHF
100
1.21 CHF
500
0.977 CHF
1 000
0.931 CHF
2 000
0.888 CHF
Acquista
Min: 1 Mult.: 1
Nastrati :1 000
Dettagli
Schottky Diodes
SMD/SMT
TO-263L-3
Single
Si
30 A
100 V
780 mV
200 A
150 uA
+ 150 C
Reel, Cut Tape
