Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

Risultati: 49
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (CHF) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Nome commerciale Tecnologia
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN 2 446A magazzino
Nastro continuo
6.73 CHF
3.65 CHF
3.35 CHF
3.28 CHF
3.00 CHF
Nastrati
2.79 CHF
Min: 1
Mult.: 1
: 3 000
SMD/SMT PQFN-8 N-Channel 1 Channel 650 V 29 A 85 mOhms - 20 V, + 20 V 4.6 V 8.4 nC - 55 C + 150 C 96 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 480mohm GaN FET in 5x6 PQFN 1 475A magazzino
Nastro continuo
1.75 CHF
0.845 CHF
0.713 CHF
0.597 CHF
Nastrati
0.474 CHF
Min: 1
Mult.: 1
: 4 000
SMD/SMT PQFN-3 N-Channel 1 Channel 650 V 3.6 A 560 mOhms - 18 V, + 18 V 2.8 V 9 nC - 55 C + 150 C 13.2 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TOLT 1 754A magazzino
Nastro continuo
8.57 CHF
4.75 CHF
4.51 CHF
Nastrati
3.93 CHF
3.84 CHF
Min: 1
Mult.: 1
: 1 300
SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 55.7 A 41 mOhms - 20 V, + 20 V 4.8 V 24.5 nC - 55 C + 150 C 192 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TO247-3L 1 048A magazzino
8.95 CHF
4.98 CHF
4.61 CHF
4.01 CHF
3.94 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 N-Channel 1 Channel 650 V 55.7 A 41 mOhms - 20 V, + 20 V 4.8 V 24.5 nC - 55 C + 150 C 192 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TOLL 209A magazzino
Nastro continuo
8.53 CHF
5.67 CHF
5.03 CHF
4.41 CHF
3.94 CHF
Nastrati
3.80 CHF
Min: 1
Mult.: 1
: 2 000
SMD/SMT TOLL-10 N-Channel 1 Channel 650 V 55.7 A 41 mOhms 4.8 V 24.5 nC - 55C + 150 C 192 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TO247-4L 529A magazzino
8.41 CHF
4.97 CHF
4.22 CHF
3.73 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 N-Channel 1 Channel 650 V 35 A 60 mOhms - 20 V, + 20 V 4.8 V 16 nC - 55 C + 150 C 132 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in TO220 775A magazzino
Nastro continuo
6.62 CHF
3.68 CHF
3.37 CHF
2.85 CHF
Nastrati
2.85 CHF
Min: 1
Mult.: 1
: 1 000
Through Hole TO-220-3 N-Channel 1 Channel 650 V 29 A 85 mOhms - 20 V, + 20 V 4.7 V 9 nC - 55 C + 150 C 96 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in TOLT 1 608A magazzino
Nastro continuo
6.87 CHF
3.73 CHF
3.43 CHF
3.36 CHF
Nastrati
2.86 CHF
Min: 1
Mult.: 1
: 1 300
SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 29 A 85 mOhms - 20 V, + 20 V 4.8 V 9 nC - 55 C + 150 C 96 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 100mohm GaN FET in TO220 716A magazzino
Nastro continuo
5.33 CHF
2.83 CHF
2.58 CHF
2.16 CHF
Nastrati
2.15 CHF
Min: 1
Mult.: 1
: 1 000
Through Hole TO-220-3 N-Channel 650 V 18.9 A 110 mOhms - 20 V, + 20 V 3.65 V 14.4 nC - 55 C + 150 C 65.8 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 480mohm GaN FET in 5x6 PQFN 3 744A magazzino
Nastro continuo
1.75 CHF
0.845 CHF
0.756 CHF
0.601 CHF
Nastrati
0.474 CHF
Min: 1
Mult.: 1
: 4 000
SMD/SMT QFN-7 N-Channel 1 Channel 650 V 3.6 A 560 mOhms - 10 V, + 10 V 2.8 V 5 nC - 55 C + 150 C 13.2 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN 2 585A magazzino
Nastro continuo
6.85 CHF
3.72 CHF
3.43 CHF
3.36 CHF
3.08 CHF
Nastrati
2.85 CHF
Min: 1
Mult.: 1
: 3 000
SMD/SMT PQFN-3 N-Channel 1 Channel 650 V 29 A 85 mOhms - 20 V, + 20 V 4.8 V 8.4 nC - 55 C + 150 C 96 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 150mohm GaN FET in TO220 1 755A magazzino
4.35 CHF
2.36 CHF
2.10 CHF
1.75 CHF
Min: 1
Mult.: 1
Through Hole TO-220-3 N-Channel 1 Channel 650 V 13 A 180 mOhms - 20 V, + 20 V 4.8 V 8 nC - 55 C + 150 C 52 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 110mohm GaN BDS in TOLT
1 192In ordine
Nastro continuo
6.42 CHF
4.35 CHF
3.18 CHF
3.08 CHF
2.86 CHF
Nastrati
2.62 CHF
Min: 1
Mult.: 1
: 1 500
SuperGaN
Renesas Electronics GaN FETs 700V, 135mohm GaN FET in 5x6 PQFN IP Tempo di consegna, se non a magazzino 26 settimane
Nastrati
0.945 CHF
Min: 5 000
Mult.: 5 000
: 5 000
SMD/SMT PQFN-8 N-Channel 1 Channel 700 V 15.8 A 169 mOhms 20 V 2.5 V 5.9 nC - 55 C + 150 C 69.4 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 700V, 135mohm GaN FET in 8x8 PQFN IP Tempo di consegna, se non a magazzino 26 settimane
Nastrati
1.00 CHF
Min: 3 000
Mult.: 3 000
: 3 000
SMD/SMT PQFN-8 N-Channel 1 Channel 700 V 14.6 A 169 mOhms 20 V 2.5 V 5.9 nC - 55 C + 150 C 59.5 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 35mohm GaN FET in TO247-4L Tempo di consegna, se non a magazzino 26 settimane
4.42 CHF
Min: 1 200
Mult.: 600
Through Hole TO-247-4 N-Channel 1 Channel 650 V 46.5 A 41 mOhms - 20 V, + 20 V 3.6 V 42.7 nC - 55 C + 150 C 156 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TOLL Tempo di consegna, se non a magazzino 26 settimane
Nastrati
3.54 CHF
Min: 2 000
Mult.: 2 000
: 2 000
SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 34 A 60 mOhms - 20 V, + 20 V 4.8 V 16 nC - 55 C + 150 C 119 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN Tempo di consegna, se non a magazzino 26 settimane
Nastrati
2.58 CHF
Min: 3 000
Mult.: 3 000
: 3 000
PQFN-8 650 V SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN Tempo di consegna, se non a magazzino 26 settimane
Nastrati
2.56 CHF
Min: 3 000
Mult.: 3 000
: 3 000
PQFN-8 650 V SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in TOLL Tempo di consegna, se non a magazzino 26 settimane
Nastrati
2.51 CHF
Min: 2 000
Mult.: 2 000
: 2 000
SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 29 A 60 mOhms - 20 V, + 20 V 4.8 V 8.4 nC - 55 C + 150 C 96 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 100mohm GaN FET in 8x8 PQFN Tempo di consegna, se non a magazzino 26 settimane
Nastrati
1.74 CHF
Min: 3 000
Mult.: 3 000
: 3 000
SMD/SMT PQFN-8 N-Channel 1 Channel 650 V 18.9 A 110 mOhms - 20 V, + 20 V 4.1 V 14.4 nC - 55 C + 150 C Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 700V, 130mohm GaN FET in 8x8 PQFN PP Tempo di consegna, se non a magazzino 26 settimane
Nastrati
1.00 CHF
Min: 3 000
Mult.: 3 000
: 3 000
SMD/SMT PQFN-3 N-Channel 1 Channel 700 V 16 A 163 mOhms 20 V 4.8 V 10.7 nC - 55 C + 150 C 69.4 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 700V, 130mohm GaN FET in TO-220 Tempo di consegna, se non a magazzino 26 settimane
3.25 CHF
1.65 CHF
1.50 CHF
1.23 CHF
Min: 1
Mult.: 1
Through Hole TO-220-3 N-Channel 1 Channel 700 V 16 A 163 mOhms 20 V 4.8 V 10.7 nC - 55 C + 150 C 69.4 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN Tempo di consegna, se non a magazzino 26 settimane
Nastrati
1.08 CHF
Min: 3 000
Mult.: 3 000
: 3 000
700 V SuperGaN GaN
Renesas Electronics GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN Tempo di consegna, se non a magazzino 26 settimane
Nastrati
1.05 CHF
Min: 3 000
Mult.: 3 000
: 3 000
700 V SuperGaN GaN