|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
29.31 CHF
-
740A magazzino
-
2 000In ordine
|
Codice Mouser
726-IMBG120R008M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
740A magazzino
2 000In ordine
In ordine:
1 000 In corso
1 000 15.10.2026 previsto
Tempo di consegna da parte della fabbrica:
60 settimane
|
|
|
29.31 CHF
|
|
|
21.80 CHF
|
|
|
21.79 CHF
|
|
|
20.81 CHF
|
|
|
20.65 CHF
|
|
Min: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
21.95 CHF
-
176A magazzino
-
2 000In ordine
|
Codice Mouser
726-IMBG120R012M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
176A magazzino
2 000In ordine
In ordine:
1 000 15.10.2026 previsto
1 000 19.10.2026 previsto
Tempo di consegna da parte della fabbrica:
53 settimane
|
|
|
21.95 CHF
|
|
|
15.33 CHF
|
|
|
14.93 CHF
|
|
|
14.14 CHF
|
|
|
13.38 CHF
|
|
Min: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
13.14 CHF
-
294A magazzino
|
Codice Mouser
726-IMBG120R022M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
294A magazzino
|
|
|
13.14 CHF
|
|
|
7.87 CHF
|
|
|
7.86 CHF
|
|
|
7.45 CHF
|
|
Min: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
10.60 CHF
-
1 609A magazzino
|
Codice Mouser
726-IMBG120R026M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 609A magazzino
|
|
|
10.60 CHF
|
|
|
6.45 CHF
|
|
|
6.36 CHF
|
|
|
6.10 CHF
|
|
Min: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
7.70 CHF
-
561A magazzino
|
Codice Mouser
726-IMBG120R053M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
561A magazzino
|
|
|
7.70 CHF
|
|
|
4.25 CHF
|
|
|
3.91 CHF
|
|
|
3.88 CHF
|
|
|
3.47 CHF
|
|
Min: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
4.69 CHF
-
844A magazzino
-
2 000In ordine
|
Codice Mouser
726-IMBG120R181M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
844A magazzino
2 000In ordine
|
|
|
4.69 CHF
|
|
|
2.46 CHF
|
|
|
2.25 CHF
|
|
|
2.03 CHF
|
|
|
1.92 CHF
|
|
Min: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
4.24 CHF
-
5 092A magazzino
|
Codice Mouser
726-IMBG120R234M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
5 092A magazzino
|
|
|
4.24 CHF
|
|
|
2.21 CHF
|
|
|
2.00 CHF
|
|
|
1.77 CHF
|
|
|
1.76 CHF
|
|
Min: 1
Mult.: 1
Max.: 1 000
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
9.09 CHF
-
200A magazzino
-
1 00010.12.2026 previsto
|
Codice Mouser
726-IMBG120R040M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
200A magazzino
1 00010.12.2026 previsto
|
|
|
9.09 CHF
|
|
|
5.19 CHF
|
|
|
4.67 CHF
|
|
|
4.42 CHF
|
|
Min: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
6.77 CHF
-
46A magazzino
-
2 00010.06.2027 previsto
|
Codice Mouser
726-IMBG120R078M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
46A magazzino
2 00010.06.2027 previsto
|
|
|
6.77 CHF
|
|
|
3.65 CHF
|
|
|
3.35 CHF
|
|
|
3.24 CHF
|
|
|
2.85 CHF
|
|
Min: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
15.63 CHF
-
2 000In ordine
|
Codice Mouser
726-IMBG120R017M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
2 000In ordine
In ordine:
1 000 15.04.2027 previsto
1 000 07.09.2027 previsto
Tempo di consegna da parte della fabbrica:
53 settimane
|
|
|
15.63 CHF
|
|
|
9.84 CHF
|
|
|
9.59 CHF
|
|
|
9.36 CHF
|
|
|
9.19 CHF
|
|
Min: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
5.49 CHF
-
2 00017.06.2027 previsto
|
Codice Mouser
726-IMBG120R116M2HXT
|
Infineon Technologies
|
MOSFET SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
2 00017.06.2027 previsto
|
|
|
5.49 CHF
|
|
|
2.92 CHF
|
|
|
2.68 CHF
|
|
|
2.50 CHF
|
|
|
2.37 CHF
|
|
Min: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|