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SiC MOSFET SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
17.80 CHF
-
736En stock
-
NRND
|
Référence Mouser
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
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SiC MOSFET SIC_DISCRETE
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736En stock
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17.80 CHF
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14.30 CHF
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13.18 CHF
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11.97 CHF
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Devis
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Devis
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Min. : 1
Mult. : 1
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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1.2 kV
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52 A
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59 mOhms
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- 7 V, + 20 V
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5.7 V
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57 nC
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- 55 C
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+ 175 C
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228 W
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Enhancement
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CoolSiC
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SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
4.66 CHF
-
1 783En stock
-
9 000Sur commande
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Référence Mouser
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
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1 783En stock
9 000Sur commande
Stock:
1 783 Expédition possible immédiatement
Sur commande:
5 000 En attente
4 000 07.01.2027 attendu
Délai usine :
53 Semaines
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4.66 CHF
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2.93 CHF
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2.19 CHF
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1.87 CHF
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1.74 CHF
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1.67 CHF
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Min. : 1
Mult. : 1
:
1 000
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SMD/SMT
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TO-263-7
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N-Channel
|
1 Channel
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1.7 kV
|
5.2 A
|
1 Ohms
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- 10 V, + 20 V
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4.5 V
|
5 nC
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- 55 C
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+ 175 C
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68 W
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Enhancement
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CoolSiC
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SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
6.46 CHF
-
285En stock
-
NRND
|
Référence Mouser
726-IMW120R140M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
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285En stock
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6.46 CHF
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4.22 CHF
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3.47 CHF
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3.03 CHF
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2.87 CHF
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Min. : 1
Mult. : 1
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
|
1.2 kV
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19 A
|
182 mOhms
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- 7 V, + 23 V
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3.5 V
|
13 nC
|
- 55 C
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+ 175 C
|
94 W
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Enhancement
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CoolSiC
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SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
12.86 CHF
-
1 221En stock
-
NRND
|
Référence Mouser
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
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1 221En stock
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12.86 CHF
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|
9.80 CHF
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8.17 CHF
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7.27 CHF
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6.88 CHF
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|
Min. : 1
Mult. : 1
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Through Hole
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TO-247-3
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N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
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- 5 V, + 23 V
|
5.7 V
|
62 nC
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- 55 C
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+ 150 C
|
189 W
|
Enhancement
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CoolSiC
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SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
8.82 CHF
-
42En stock
-
24024.08.2026 attendu
-
NRND
|
Référence Mouser
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
42En stock
24024.08.2026 attendu
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8.82 CHF
|
|
|
6.24 CHF
|
|
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5.20 CHF
|
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4.62 CHF
|
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4.39 CHF
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Min. : 1
Mult. : 1
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Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
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33 nC
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- 55 C
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+ 150 C
|
125 W
|
Enhancement
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CoolSiC
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SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
14.60 CHF
-
2 160Sur commande
-
NRND
|
Référence Mouser
726-IMZ120R030M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2 160Sur commande
Délai usine :
52 Semaines
|
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14.60 CHF
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9.65 CHF
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8.34 CHF
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8.11 CHF
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|
Min. : 1
Mult. : 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
7.52 CHF
-
Délai de livraison produit non stocké 52 Semaines
-
NRND
|
Référence Mouser
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
Délai de livraison produit non stocké 52 Semaines
|
|
|
7.52 CHF
|
|
|
5.29 CHF
|
|
|
3.88 CHF
|
|
|
3.41 CHF
|
|
Min. : 1
Mult. : 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
Suisse