π-MOS VIII MOSFETs

Toshiba π-MOS VIII MOSFETs are 10V gate drive single N-channel devices based on the Toshiba eighth-generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. The technology supports reduced gate charge and capacitance compared to prior generations without losing the benefits of low RDS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through-hole form factor and a surface-mounted DPAK package.

Risultati: 11
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (CHF) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Nome commerciale Confezione
Toshiba MOSFET PLN MOS 900V 1300m (VGS=10V) TO-220SIS 6A magazzino
550In ordine
2.58 CHF
1.26 CHF
1.12 CHF
0.955 CHF
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 9 A 1 Ohms 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube
Toshiba MOSFET X33 Pb-F POWER MOSFET TRANSISTOR DPAK(OS) MOQ=2000 PD=80W F=1MHZ 3 129A magazzino
Nastro continuo
1.24 CHF
0.579 CHF
0.516 CHF
0.404 CHF
Nastrati
0.388 CHF
Min: 1
Mult.: 1
: 2 000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 3 A 4.9 Ohms 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFET TO252 900V 2A N-CH MOSFET 4 015A magazzino
Nastro continuo
1.68 CHF
0.804 CHF
0.718 CHF
0.568 CHF
Nastrati
0.471 CHF
Min: 1
Mult.: 1
: 2 000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 900 V 2 A 5.9 Ohms 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN 2 496A magazzino
3.15 CHF
1.80 CHF
1.42 CHF
1.30 CHF
0.955 CHF
Min: 1
Mult.: 1
Si Through Hole TO-3P N-Channel 1 Channel 900 V 9 A 1.3 Ohms 30 V 2.5 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS 153A magazzino
2.28 CHF
1.12 CHF
1.05 CHF
Min: 1
Mult.: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 10 A 700 mOhms 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube
Toshiba MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN 4A magazzino
12515.02.2027 previsto
3.09 CHF
1.58 CHF
1.40 CHF
1.15 CHF
Min: 1
Mult.: 1
Si Through Hole TO-3PN-3 N-Channel 1 Channel 800 V 10 A 700 mOhms 30 V 4 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFET X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ 250A magazzino
1.29 CHF
0.612 CHF
0.611 CHF
0.478 CHF
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 2.5 A 4.6 Ohms 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube
Toshiba MOSFET X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ 265A magazzino
1.32 CHF
0.622 CHF
0.478 CHF
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 3.5 Ohms 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube
Toshiba MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS 158A magazzino
1.90 CHF
0.926 CHF
0.917 CHF
0.805 CHF
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 1.35 Ohms 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFET PLN MOS 900V 2000m (VGS=10V) TO-220SIS 170A magazzino
1.77 CHF
0.861 CHF
0.854 CHF
0.737 CHF
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFET PLN MOS 900V 2000m (VGS=10V) TO-3PN 98A magazzino
2.69 CHF
1.35 CHF
1.19 CHF
0.973 CHF
Min: 1
Mult.: 1
Si Through Hole TO-3PN-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms 30 V 4 V 32 nC - 55 C + 150 C 200 W Enhancement MOSVIII Tray