MOSFET PLN MOS 900V 1300m (VGS=10V) TO-220SIS
TK9A90E,S4X
Toshiba
1:
2.58 CHF
6 A magazzino
550 In ordine
Codice Mouser
757-TK9A90ES4X
Toshiba
MOSFET PLN MOS 900V 1300m (VGS=10V) TO-220SIS
6 A magazzino
550 In ordine
Visualizza date
In ordine:
150 13.10.2026 previsto
400 15.01.2027 previsto
Tempo di consegna da parte della fabbrica:
16 settimane
Acquista
Min: 1
Mult.: 1
Dettagli
Si
Through Hole
TO-220-3
N-Channel
1 Channel
900 V
9 A
1 Ohms
30 V
4 V
46 nC
- 55 C
+ 150 C
50 W
Enhancement
MOSVIII
Tube
MOSFET X33 Pb-F POWER MOSFET TRANSISTOR DPAK(OS) MOQ=2000 PD=80W F=1MHZ
TK3P80E,RQ
Toshiba
1:
1.24 CHF
3 129 A magazzino
Codice Mouser
757-TK3P80ERQ
Toshiba
MOSFET X33 Pb-F POWER MOSFET TRANSISTOR DPAK(OS) MOQ=2000 PD=80W F=1MHZ
3 129 A magazzino
Acquista
Min: 1
Mult.: 1
Nastrati :
2 000
Dettagli
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
800 V
3 A
4.9 Ohms
30 V
2.5 V
12 nC
- 55 C
+ 150 C
80 W
Enhancement
MOSVIII
Reel, Cut Tape, MouseReel
MOSFET TO252 900V 2A N-CH MOSFET
TK2P90E,RQ
Toshiba
1:
1.68 CHF
4 015 A magazzino
Codice Mouser
757-TK2P90ERQ
Toshiba
MOSFET TO252 900V 2A N-CH MOSFET
4 015 A magazzino
Acquista
Min: 1
Mult.: 1
Nastrati :
2 000
Dettagli
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
900 V
2 A
5.9 Ohms
30 V
2.5 V
12 nC
- 55 C
+ 150 C
80 W
Enhancement
MOSVIII
Reel, Cut Tape, MouseReel
MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN
TK9J90E,S1E
Toshiba
1:
3.15 CHF
2 496 A magazzino
Codice Mouser
757-TK9J90ES1E
Toshiba
MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN
2 496 A magazzino
Acquista
Min: 1
Mult.: 1
Dettagli
Si
Through Hole
TO-3P
N-Channel
1 Channel
900 V
9 A
1.3 Ohms
30 V
2.5 V
46 nC
- 55 C
+ 150 C
250 W
Enhancement
MOSVIII
Tray
MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
TK10A80E,S4X
Toshiba
1:
2.28 CHF
153 A magazzino
Codice Mouser
757-TK10A80ES4X
Toshiba
MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
153 A magazzino
Acquista
Min: 1
Mult.: 1
Dettagli
Si
Through Hole
TO-220FP-3
N-Channel
1 Channel
800 V
10 A
700 mOhms
30 V
4 V
46 nC
- 55 C
+ 150 C
50 W
Enhancement
MOSVIII
Tube
MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN
TK10J80E,S1E
Toshiba
1:
3.09 CHF
4 A magazzino
125 15.02.2027 previsto
Codice Mouser
757-TK10J80ES1E
Toshiba
MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN
4 A magazzino
125 15.02.2027 previsto
Acquista
Min: 1
Mult.: 1
Dettagli
Si
Through Hole
TO-3PN-3
N-Channel
1 Channel
800 V
10 A
700 mOhms
30 V
4 V
46 nC
- 55 C
+ 150 C
250 W
Enhancement
MOSVIII
Tray
MOSFET X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ
TK3A90E,S4X
Toshiba
1:
1.29 CHF
250 A magazzino
Codice Mouser
757-TK3A90ES4X
Toshiba
MOSFET X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ
250 A magazzino
Acquista
Min: 1
Mult.: 1
Dettagli
Si
Through Hole
TO-220-3
N-Channel
1 Channel
900 V
2.5 A
4.6 Ohms
30 V
2.5 V
15 nC
- 55 C
+ 150 C
35 W
Enhancement
MOSVIII
Tube
MOSFET X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ
TK4A80E,S4X
Toshiba
1:
1.32 CHF
265 A magazzino
Codice Mouser
757-TK4A80ES4X
Toshiba
MOSFET X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ
265 A magazzino
Acquista
Min: 1
Mult.: 1
Dettagli
Si
Through Hole
TO-220-3
N-Channel
1 Channel
800 V
4 A
3.5 Ohms
30 V
2.5 V
15 nC
- 55 C
+ 150 C
35 W
Enhancement
MOSVIII
Tube
MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS
TK6A80E,S4X
Toshiba
1:
1.90 CHF
158 A magazzino
Codice Mouser
757-TK6A80ES4X
Toshiba
MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS
158 A magazzino
Acquista
Min: 1
Mult.: 1
Dettagli
Si
Through Hole
TO-220-3
N-Channel
1 Channel
800 V
6 A
1.35 Ohms
30 V
4 V
32 nC
- 55 C
+ 150 C
45 W
Enhancement
MOSVIII
Tube
MOSFET PLN MOS 900V 2000m (VGS=10V) TO-220SIS
TK7A90E,S4X
Toshiba
1:
1.77 CHF
170 A magazzino
Codice Mouser
757-TK7A90ES4X
Toshiba
MOSFET PLN MOS 900V 2000m (VGS=10V) TO-220SIS
170 A magazzino
Acquista
Min: 1
Mult.: 1
Dettagli
Si
Through Hole
TO-220-3
N-Channel
1 Channel
900 V
7 A
1.6 Ohms
30 V
4 V
32 nC
- 55 C
+ 150 C
45 W
Enhancement
MOSVIII
Tube
MOSFET PLN MOS 900V 2000m (VGS=10V) TO-3PN
TK7J90E,S1E
Toshiba
1:
2.69 CHF
98 A magazzino
Codice Mouser
757-TK7J90ES1E
Toshiba
MOSFET PLN MOS 900V 2000m (VGS=10V) TO-3PN
98 A magazzino
Acquista
Min: 1
Mult.: 1
Dettagli
Si
Through Hole
TO-3PN-3
N-Channel
1 Channel
900 V
7 A
1.6 Ohms
30 V
4 V
32 nC
- 55 C
+ 150 C
200 W
Enhancement
MOSVIII
Tray