UJ3D 650V/1200V/1700V SiC Schottky Diodes

onsemi UJ3D 650V/1200V/1700V SiC Schottky Diodes are designed to take advantage of SiC's superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF). With zero reverse recovery charge and a high maximum junction temperature of +175°C, these devices are ideally suited for high-frequency and high-efficiency power systems with minimum cooling requirements. These devices from onsemi feature an optimized forward voltage drop, enhanced surge capability, and ultra-low reverse recovery Qc(Qrr) and are ideally suited for telecom power, server PSUs, battery chargers, and any application that requires high switching speeds and reduced losses. All devices are qualified according to AEC-Q101 standards and manufactured in a TS 16949-certified supply chain, making them ideal for automotive applications. 

Résultats: 10
Sélectionner Image Référence
 Fab.
Description Fiche technique Disponibilité Prix (CHF) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Style de montage
Package/Boîte
Configuration
If - Courant direct
Vrrm - Tension inverse répétitive
Vf - Tension directe
Ifsm - Courant de surtension direct
Ir - Courant inverse
Température de fonctionnement min.
Température de fonctionnement max.
Vr - Tension inverse
Série
Qualification
Conditionnement
onsemi Diodes Schottky SiC 1200V/50ASICDIODEG3TO
Fiche technique
1 307En stock
Min. : 1
Mult. : 1

Through Hole TO-247-2 Single 50 A 1.2 kV 1.5 V 275 A 52 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi Diodes Schottky SiC 1200V/10ASICDIODEG3TO
Fiche technique
688En stock
Min. : 1
Mult. : 1

Through Hole TO-247-2 Single 10 A 1.2 kV 1.4 V 120 A 10 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi Diodes Schottky SiC 1200V/20ASICDIODEDUAL
Fiche technique
343En stock
Min. : 1
Mult. : 1

Through Hole TO-247-3 Dual 20 A 1.2 kV 1.4 V 240 A 200 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi Diodes Schottky SiC 1200V/50ASICDIODEG3TO
Fiche technique
538En stock
Min. : 1
Mult. : 1

Through Hole TO-247-3 Single 50 A 1.2 kV 1.5 V 275 A 500 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi Diodes Schottky SiC 1200V/10ASICDIODEG3TO
Fiche technique
1 039En stock
Min. : 1
Mult. : 1

Through Hole TO-247-3 Single 10 A 1.2 kV 1.4 V 120 A 100 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi Diodes Schottky SiC 1200V/20ASICDIODEG3TO
Fiche technique
917En stock
Min. : 1
Mult. : 1

Through Hole TO-247-2 Single 20 A 1.2 kV 1.52 V 190 A 18 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi Diodes Schottky SiC 1200V/10ASICDIODEDUAL
Fiche technique
1 070En stock
Min. : 1
Mult. : 1

Through Hole TO-247-3 Dual 10 A 1.2 kV 1.4 V 140 A 80 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi Diodes Schottky SiC 1700V/25ASICDIODEG3TO
Fiche technique
236En stock
Min. : 1
Mult. : 1

Through Hole TO-247-2 Single 25 A 1.7 kV 1.54 V 180 A 24 uA - 55 C + 175 C 1.7 kV UJ3D AEC-Q101 Tube
onsemi Diodes Schottky SiC 650V/60ASICDIODEDUALG
Fiche technique
133En stock
60020.11.2026 attendu
Min. : 1
Mult. : 1
Max. : 50

Through Hole TO-247-3 Dual 60 A 650 V 1.5 V 330 A 60 uA - 55 C + 175 C 650 V UJ3D AEC-Q101 Tube
onsemi Diodes Schottky SiC 650V/20ASICDIODEDUALG
Fiche technique
139En stock
Min. : 1
Mult. : 1

Through Hole TO-247-3 Dual 20 A 650 V 1.5 V 140 A 20 uA - 55 C + 175 C 650 V UJ3D AEC-Q101 Tube