|
|
MOSFET HIGH POWER_NEW
- IPW60R037P7XKSA1
- Infineon Technologies
-
1:
8.64 CHF
-
12 646A magazzino
|
Codice Mouser
726-IPW60R037P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
12 646A magazzino
|
|
Min: 1
Mult.: 1
Max.: 4 000
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
76 A
|
30 mOhms
|
20 V
|
3 V
|
121 nC
|
- 55 C
|
+ 150 C
|
255 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R099P7ATMA1
- Infineon Technologies
-
1:
4.30 CHF
-
1 122A magazzino
|
Codice Mouser
726-IPB60R099P7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1 122A magazzino
|
|
Min: 1
Mult.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET LOW POWER_NEW
- IPD95R1K2P7ATMA1
- Infineon Technologies
-
1:
1.76 CHF
-
3 866A magazzino
|
Codice Mouser
726-IPD95R1K2P7ATMA1
|
Infineon Technologies
|
MOSFET LOW POWER_NEW
|
|
3 866A magazzino
|
|
Min: 1
Mult.: 1
:
2 500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
950 V
|
6 A
|
1.2 Ohms
|
20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
52 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R285P7AUMA1
- Infineon Technologies
-
1:
2.50 CHF
-
3 752A magazzino
|
Codice Mouser
726-IPL60R285P7AUMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
3 752A magazzino
|
|
Min: 1
Mult.: 1
:
3 000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
218 mOhms
|
20 V
|
3 V
|
18 nC
|
- 40 C
|
+ 150 C
|
59 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET LOW POWER_NEW
- IPD80R1K2P7ATMA1
- Infineon Technologies
-
1:
1.44 CHF
-
8 650A magazzino
|
Codice Mouser
726-IPD80R1K2P7ATMA1
|
Infineon Technologies
|
MOSFET LOW POWER_NEW
|
|
8 650A magazzino
|
|
Min: 1
Mult.: 1
:
2 500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
4.5 A
|
1 Ohms
|
20 V
|
2.5 V
|
11 nC
|
- 55 C
|
+ 150 C
|
37 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R080P7XKSA1
- Infineon Technologies
-
1:
5.68 CHF
-
3 398A magazzino
|
Codice Mouser
726-IPW60R080P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
3 398A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET CONSUMER
- IPAN70R600P7SXKSA1
- Infineon Technologies
-
1:
1.38 CHF
-
4 850A magazzino
|
Codice Mouser
726-IPAN70R600P7SXKS
|
Infineon Technologies
|
MOSFET CONSUMER
|
|
4 850A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
700 V
|
8.5 A
|
490 mOhms
|
30 V
|
2.5 V
|
10.5 nC
|
- 40 C
|
+ 150 C
|
24.9 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET LOW POWER_NEW
- IPD80R2K4P7ATMA1
- Infineon Technologies
-
1:
1.12 CHF
-
9 128A magazzino
|
Codice Mouser
726-IPD80R2K4P7ATMA1
|
Infineon Technologies
|
MOSFET LOW POWER_NEW
|
|
9 128A magazzino
|
|
Min: 1
Mult.: 1
:
2 500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
2.5 A
|
2 Ohms
|
20 V
|
2.5 V
|
7.5 nC
|
- 55 C
|
+ 150 C
|
22 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET LOW POWER_NEW
- IPD80R750P7ATMA1
- Infineon Technologies
-
1:
1.75 CHF
-
4 438A magazzino
|
Codice Mouser
726-IPD80R750P7ATMA1
|
Infineon Technologies
|
MOSFET LOW POWER_NEW
|
|
4 438A magazzino
|
|
Min: 1
Mult.: 1
:
2 500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
7 A
|
640 mOhms
|
20 V
|
2.5 V
|
17 nC
|
- 55 C
|
+ 150 C
|
51 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET LOW POWER_NEW
- IPD80R900P7ATMA1
- Infineon Technologies
-
1:
1.62 CHF
-
7 416A magazzino
|
Codice Mouser
726-IPD80R900P7ATMA1
|
Infineon Technologies
|
MOSFET LOW POWER_NEW
|
|
7 416A magazzino
|
|
Min: 1
Mult.: 1
:
2 500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
770 mOhms
|
20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R185P7AUMA1
- Infineon Technologies
-
1:
2.65 CHF
-
3 631A magazzino
|
Codice Mouser
726-IPL60R185P7AUMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
3 631A magazzino
|
|
Min: 1
Mult.: 1
:
3 000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
19 A
|
149 mOhms
|
20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
81 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET LOW POWER_NEW
- IPN80R1K4P7ATMA1
- Infineon Technologies
-
1:
1.24 CHF
-
7 343A magazzino
-
9 00003.12.2026 previsto
|
Codice Mouser
726-IPN80R1K4P7ATMA1
|
Infineon Technologies
|
MOSFET LOW POWER_NEW
|
|
7 343A magazzino
9 00003.12.2026 previsto
|
|
Min: 1
Mult.: 1
:
3 000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
800 V
|
4 A
|
1.2 Ohms
|
20 V
|
2.5 V
|
10 nC
|
- 55 C
|
+ 150 C
|
7 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R065P7AUMA1
- Infineon Technologies
-
1:
6.50 CHF
-
3 413A magazzino
|
Codice Mouser
726-IPL60R065P7AUMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
3 413A magazzino
|
|
Min: 1
Mult.: 1
:
3 000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
41 A
|
53 mOhms
|
20 V
|
3 V
|
67 nC
|
- 40 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET LOW POWER_NEW
- IPN95R1K2P7ATMA1
- Infineon Technologies
-
1:
1.54 CHF
-
5 076A magazzino
|
Codice Mouser
726-IPN95R1K2P7ATMA1
|
Infineon Technologies
|
MOSFET LOW POWER_NEW
|
|
5 076A magazzino
|
|
Min: 1
Mult.: 1
:
3 000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
950 V
|
6 A
|
1.2 Ohms
|
20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
7 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET LOW POWER_NEW
- IPA80R900P7XKSA1
- Infineon Technologies
-
1:
1.83 CHF
-
1 216A magazzino
|
Codice Mouser
726-IPA80R900P7XKSA1
|
Infineon Technologies
|
MOSFET LOW POWER_NEW
|
|
1 216A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
770 mOhms
|
20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET CONSUMER
- IPAN70R360P7SXKSA1
- Infineon Technologies
-
1:
1.62 CHF
-
1 649A magazzino
|
Codice Mouser
726-IPAN70R360P7SXKS
|
Infineon Technologies
|
MOSFET CONSUMER
|
|
1 649A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
700 V
|
12.5 A
|
300 mOhms
|
30 V
|
2.5 V
|
16.4 nC
|
- 40 C
|
+ 150 C
|
26.5 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPZA60R045P7XKSA1
- Infineon Technologies
-
1:
7.91 CHF
-
195A magazzino
|
Codice Mouser
726-IPZA60R045P7XKSA
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
195A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
61 A
|
45 mOhms
|
20 V
|
3.5 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET LOW POWER_NEW
- IPU80R900P7AKMA1
- Infineon Technologies
-
1:
1.64 CHF
-
1 411A magazzino
|
Codice Mouser
726-IPU80R900P7AKMA1
|
Infineon Technologies
|
MOSFET LOW POWER_NEW
|
|
1 411A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
900 mOhms
|
20 V
|
2.5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET LOW POWER_NEW
- IPA80R600P7XKSA1
- Infineon Technologies
-
1:
2.14 CHF
-
1 318A magazzino
|
Codice Mouser
726-IPA80R600P7XKSA1
|
Infineon Technologies
|
MOSFET LOW POWER_NEW
|
|
1 318A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
8 A
|
510 mOhms
|
20 V
|
2.5 V
|
20 nC
|
- 55 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET LOW POWER_NEW
- IPN95R2K0P7ATMA1
- Infineon Technologies
-
1:
1.38 CHF
-
2 007A magazzino
-
Fine vita
|
Codice Mouser
726-IPN95R2K0P7ATMA1
Fine vita
|
Infineon Technologies
|
MOSFET LOW POWER_NEW
|
|
2 007A magazzino
|
|
Min: 1
Mult.: 1
:
3 000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
950 V
|
4 A
|
2 Ohms
|
20 V
|
2.5 V
|
10 nC
|
- 55 C
|
+ 150 C
|
7 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET LOW POWER_NEW
- IPN80R1K2P7ATMA1
- Infineon Technologies
-
1:
1.35 CHF
-
2 815A magazzino
-
Fine vita
|
Codice Mouser
726-IPN80R1K2P7ATMA1
Fine vita
|
Infineon Technologies
|
MOSFET LOW POWER_NEW
|
|
2 815A magazzino
|
|
Min: 1
Mult.: 1
:
3 000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
800 V
|
4.5 A
|
1 Ohms
|
30 V
|
3 V
|
11 nC
|
- 55 C
|
+ 150 C
|
6.8 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFET CONSUMER
- IPA70R600P7SXKSA1
- Infineon Technologies
-
1:
1.32 CHF
-
56 328A magazzino
|
Codice Mouser
726-IPA70R600P7XKSA1
|
Infineon Technologies
|
MOSFET CONSUMER
|
|
56 328A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
700 V
|
8.5 A
|
600 mOhms
|
16 V
|
2.5 V
|
10.5 nC
|
- 40 C
|
+ 150 C
|
24.9 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R045P7ATMA1
- Infineon Technologies
-
1:
6.74 CHF
-
4 688A magazzino
|
Codice Mouser
726-IPB60R045P7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
4 688A magazzino
|
|
Min: 1
Mult.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
120 V
|
61 A
|
45 mOhms
|
20 V
|
1.7 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP60R080P7XKSA1
- Infineon Technologies
-
1:
4.67 CHF
-
23 822A magazzino
|
Codice Mouser
726-IPP60R080P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
23 822A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R180P7XKSA1
- Infineon Technologies
-
1:
3.34 CHF
-
32 172A magazzino
-
43 20017.12.2026 previsto
|
Codice Mouser
726-IPW60R180P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
32 172A magazzino
43 20017.12.2026 previsto
|
|
Min: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|