GANE7R0/GANE2R7/GANE1R8 100V GaN FETs

Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs are general-purpose, normally off e-mode devices that deliver superior performance and very low on-state resistance.

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (CHF) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Technology
Nexperia GaN FETs GANE2R7-100CBA/SOT8089/WLCSP22 1 453In Stock
Cut Tape
4.71 CHF
2.47 CHF
2.26 CHF
2.04 CHF
1.73 CHF
Reel
1.73 CHF
Min.: 1
Mult.: 1
: 1 500
SMD/SMT WLCSP-22 P-Channel 1 Channel 100 V 64 A 2.7 mOhms 5.5 V 2.5 V 13 nC - 40 C + 150 C 470 W Enhancement GaN
Nexperia GaN FETs GANE1R8-100QBA/SOT8091/VQFN7 2 427In Stock
Cut Tape
8.56 CHF
4.75 CHF
4.50 CHF
4.12 CHF
Reel
3.82 CHF
Min.: 1
Mult.: 1
: 2 500
SMD/SMT VQFN-7 P-Channel 1 Channel 100 V 100 A 1.8 mOhms 6 V 2.5 V 22 nC - 40 C + 150 C 65 W Enhancement GaN
Nexperia GaN FETs GANE7R0-100CBA/SOT8090/WLCSP6 988In Stock
Cut Tape
2.18 CHF
1.07 CHF
0.964 CHF
0.77 CHF
Reel
0.678 CHF
Min.: 1
Mult.: 1
: 1 500
SMD/SMT VQFN-7 N-Channel 1 Channel 100 V 29 A 7 mOhms 6 V 2.5 V 4.5 nC - 40 C + 150 C 182 W Enhancement GaN