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SiC MOSFET SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
16.29 CHF
-
736En stock
-
NRND
|
Référence Mouser
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
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736En stock
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16.29 CHF
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12.45 CHF
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11.79 CHF
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Min. : 1
Mult. : 1
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Through Hole
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TO-247-3
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1 Channel
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1.2 kV
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52 A
|
59 mOhms
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- 7 V, + 20 V
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5.7 V
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57 nC
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- 55 C
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+ 175 C
|
228 W
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Enhancement
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CoolSiC
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SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
4.30 CHF
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3 675En stock
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3 000Sur commande
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Référence Mouser
726-IMBF170R1K0M1XTM
|
Infineon Technologies
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SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
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3 675En stock
3 000Sur commande
Stock:
3 675 Expédition possible immédiatement
Sur commande:
1 000 26.08.2026 attendu
2 000 07.10.2026 attendu
Délai usine :
53 Semaines
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4.30 CHF
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2.24 CHF
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2.04 CHF
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1.81 CHF
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1.69 CHF
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Min. : 1
Mult. : 1
:
1 000
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SMD/SMT
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TO-263-7
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1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
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4.5 V
|
5 nC
|
- 55 C
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+ 175 C
|
68 W
|
Enhancement
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CoolSiC
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SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
8.95 CHF
-
323En stock
-
NRND
|
Référence Mouser
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
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323En stock
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8.95 CHF
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6.33 CHF
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5.27 CHF
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4.69 CHF
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3.99 CHF
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|
Min. : 1
Mult. : 1
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Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
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+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
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SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
5.92 CHF
-
80En stock
-
240Sur commande
-
NRND
|
Référence Mouser
726-IMW120R140M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
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80En stock
240Sur commande
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5.92 CHF
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3.44 CHF
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3.15 CHF
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2.96 CHF
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Min. : 1
Mult. : 1
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Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
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SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
12.17 CHF
-
71En stock
-
1 680Sur commande
-
NRND
|
Référence Mouser
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
71En stock
1 680Sur commande
Stock:
71 Expédition possible immédiatement
Sur commande:
960 25.08.2026 attendu
720 14.09.2026 attendu
Délai usine :
52 Semaines
|
|
|
12.17 CHF
|
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7.66 CHF
|
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6.90 CHF
|
|
Min. : 1
Mult. : 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
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SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
14.57 CHF
-
2 160Sur commande
-
NRND
|
Référence Mouser
726-IMZ120R030M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2 160Sur commande
Délai usine :
52 Semaines
|
|
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14.57 CHF
|
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11.10 CHF
|
|
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9.25 CHF
|
|
|
8.24 CHF
|
|
|
7.80 CHF
|
|
Min. : 1
Mult. : 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
7.64 CHF
-
Délai de livraison produit non stocké 52 Semaines
-
NRND
|
Référence Mouser
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
Délai de livraison produit non stocké 52 Semaines
|
|
|
7.64 CHF
|
|
|
5.37 CHF
|
|
|
3.80 CHF
|
|
|
3.46 CHF
|
|
Min. : 1
Mult. : 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
Suisse