16 bit Circuiti integrati di memoria

Tipi di Circuiti integrati di memoria

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Risultati: 1 901
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (CHF) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Tipo di prodotto Stile di montaggio Package/involucro Dimensioni memoria Tipo di interfaccia

Winbond DRAM 1Gb DDR3L 1.35V SDRAM, x16, 800MHz 12A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT VFBGA-96 1 Gbit

Winbond DRAM 2Gb DDR3 SDRAM, x16, 933MHz 94A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT VFBGA-96 2 Gbit

Winbond DRAM 4Gb DDR3 SDRAM, x16, 1066MHz 13A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT VFBGA-96 4 Gbit
Winbond DRAM 2Gb LPDDR4X, x16, 2133MHz, Industrial Temp 38A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT WFBGA-200 2 Gbit
Winbond DRAM 128Mb DDR SDRAM x16 200MHz, 46nm 123A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT TSOP-II-66 128 Mbit
Winbond DRAM 256Mb HyperRAM x16, 200MHz, Ind temp, 1.8V
10021.09.2026 previsto
Min: 1
Mult.: 1

DRAM SMD/SMT WFBGA-49 256 Mbit
Winbond DRAM 128Mb DDR2-800, x16 155A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT TFBGA-84 128 Mbit
Winbond DRAM 128Mb SDR SDRAM x16, 200MHz, Ind temp Tempo di consegna, se non a magazzino 53 settimane
Min: 216
Mult.: 216

DRAM SMD/SMT TSOP-II-54 128 Mbit
Winbond DRAM 512Mb LPSDR, x16, 166MHz, Ind Temp, 46nm 8A magazzino
4In ordine
Min: 1
Mult.: 1

DRAM SMD/SMT VFBGA-54 512 Mbit
ISSI DRAM 4M,3.3V EDO DRAM Async,256Kx16,35ns 129A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT TSOP-II-40 4 Mbit
Avalanche Technology MRAM Avalanche Asynchronous Parallel interface P-SRAM 32Mb in FBGA48 package with x16 interface, 3V, -40 C to 85 C 58A magazzino
Min: 1
Mult.: 1

MRAM SMD/SMT FBGA-48 32 Mbit Parallel
Infineon Technologies S29GL512S11TFI023
Infineon Technologies NOR Flash PNOR 19A magazzino
Min: 1
Mult.: 1
: 1 000

NOR Flash SMD/SMT 512 Mbit Parallel
ISSI IS43LD16640C-25BLI
ISSI DRAM 1G 64Mx16 400MHz LPDDR2 1.2/1.8V 247A magazzino
17111.09.2026 previsto
Min: 1
Mult.: 1

DRAM SMD/SMT 1 Gbit
ISSI IS43LR16800G-6BLI-TR
ISSI DRAM 128M, 1.8V, Mobile DDR, 8Mx16, 166Mhz, 60 ball BGA (8mmx10mm) RoHS, IT, T&R 1 289A magazzino
Min: 1
Mult.: 1
: 2 000

DRAM SMD/SMT 128 Mbit
ISSI DRAM 8G, 1.35V, DDR3L, 512Mx16, 1600MT/s at 11-11-11, 96 ball BGA (9mm x 13mm) RoHS, IT 5A magazzino
11 780In ordine
Min: 1
Mult.: 1

DRAM SMD/SMT BGA-96 8 Gbit
ISSI DRAM 1G, 1.5V, DDR3, 64Mx16, 1600MT/s at 10-10-10, 96 ball BGA (9mm x13mm) RoHS, IT 24A magazzino
1 710In ordine
Min: 1
Mult.: 1

DRAM SMD/SMT BGA-96 1 Gbit
ISSI DRAM 1G, 1.35V, DDR3, 64Mx16, 1866MT/s at 13-13-13, 96 ball BGA (9mm x13mm) RoHS, IT 7A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT BGA-96 1 Gbit
ISSI DRAM 1G, 1.35V, DDR3, 64Mx16, 1600MT/s at 10-10-10, 96 ball BGA (9mm x13mm) RoHS 1 044A magazzino
8 170In ordine
Min: 1
Mult.: 1

DRAM SMD/SMT BGA-96 1 Gbit
ISSI DRAM DDR2,1G,1.8V, RoHs 400MHz, 64Mx16, IT 5A magazzino
5 00014.05.2027 previsto
Min: 1
Mult.: 1
: 2 500

DRAM SMD/SMT BGA-84 1 Gbit
ISSI DRAM 16Mb 1Mx16 50ns Async FP DRAM 81A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT TSOP-II-44 16 Mbit
ISSI DRAM 16M, 3.3V, SDRAM 1Mx16, 143Mhz,RoHS 45A magazzino
Min: 1
Mult.: 1
: 1 000

DRAM SMD/SMT TSOP-II-50 16 Mbit
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 166Mhz, 54 ball BGA (8mmx8mm) RoHS, T&R 1A magazzino
2 500In ordine
Min: 1
Mult.: 1
: 2 500

DRAM SMD/SMT BGA-54 16 Mbit
ISSI DRAM 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 pin Copper TSOP II (400 mil) RoHS, T&R 19A magazzino
1 500In ordine
Min: 1
Mult.: 1
: 1 500

DRAM SMD/SMT TSOP-II-54 512 Mbit
ISSI DRAM 64M, 3.3V, M-SDRAM 2Mx32, 133Mhz, RoHS 19A magazzino
34810.09.2026 previsto
Min: 1
Mult.: 1

DRAM SMD/SMT FBGA-54 64 Mbit
ISSI DRAM 512M 32Mx16 333MHz DDR2 1.8V 196A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT BGA-84 512 Mbit