IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

Ergebnisse: 25
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Beschreibung Datenblatt Verfügbarkeit Preis (CHF) Ergebnisse in der Tabelle nach dem Einheitspreis bei Ihrer Menge filtern.
Menge RoHS ECAD Model Technologie
Verpackung/Gehäuse
Montageart
Konfiguration
Kollektor-Emitterspannung VCEO max.
Sättigungsspannung Kollektor-Emitter
Maximale Gate-Emitter-Spannung
Kollektorgleichstrom bei 25 C
Pd - Verlustleistung
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Serie
Qualifikation
Verpackung


STMicroelectronics IGBTs Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
Datenblatt
74Auf Lager
1 000erwartet ab 06.11.2026
MouseReel verfügbar
Min.: 1
Mult.: 1
: 1 000

Si D2PAK SMD/SMT Single 600 V 1.8 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGB40V60F Reel, Cut Tape, MouseReel

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 6 A low loss
Datenblatt
2 063Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 500

Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGD6M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBTs 600V 40A High Speed Trench Gate IGBT
Datenblatt
791Auf Lager
Min.: 1
Mult.: 1

Si TO-247 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGW40V60DF Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package
Datenblatt
783Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 1 000

Si SMD/SMT Single 650 V 1.65 V - 20 V, 20 V 50 A 167 W - 55 C + 175 C Reel, Cut Tape, MouseReel
STMicroelectronics IGBTs 600V 60A trench gate field-stop IGBT
Datenblatt
1 930Auf Lager
3 600Auf Bestellung
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60H65DFB Tube
STMicroelectronics IGBTs Trench gate H series 600V 15A HiSpd
Datenblatt
594Auf Lager
4 000Auf Bestellung
Min.: 1
Mult.: 1

Si TO-220-3 FP Through Hole Single 600 V 1.6 V - 20 V, 20 V 30 A 30 W - 55 C + 175 C STGF15H60DF Tube
STMicroelectronics IGBTs 600V 30A High Speed Trench Gate IGBT
Datenblatt
580Auf Lager
Min.: 1
Mult.: 1

Si TO-247 Through Hole Single 600 V 2.35 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGW30V60DF Tube
STMicroelectronics IGBTs 600V 40A trench gate field-stop IGBT
Datenblatt
622Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.6 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGW40H60DLFB Tube
STMicroelectronics IGBTs 600V 60A High Speed Trench Gate IGBT
Datenblatt
526Auf Lager
600erwartet ab 06.11.2026
Min.: 1
Mult.: 1

Si TO-247 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60V60DF Tube
STMicroelectronics IGBTs 600V 60A Trench Gate 1.8V Vce IGBT
Datenblatt
717Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60V60F Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long l
Datenblatt
801Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Datenblatt
380Auf Lager
600erwartet ab 15.01.2027
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGWA40H120DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
Datenblatt
493Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 72 A 227 W - 55 C + 175 C STGWA40HP65FB2 Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long
Datenblatt
384Auf Lager
Min.: 1
Mult.: 1

TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 115 A 375 W - 55 C + 175 C Tube
STMicroelectronics IGBTs 600V 20A Hi Spd TrenchGate FieldStop
Datenblatt
162Auf Lager
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.8 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGW20V60F Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
Datenblatt
3 817erwartet ab 30.10.2026
MouseReel verfügbar
Min.: 1
Mult.: 1
: 1 000

Si D2PAK-3 SMD/SMT Single 600 V 1.85 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGB30V60DF Reel, Cut Tape, MouseReel


STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A high speed HB series IGBT
Datenblatt
280Auf Lager
Min.: 1
Mult.: 1

Si TO-3PF Through Hole Single 650 V 2 V - 20 V, 20 V 80 A 62.5 W - 55 C + 175 C STGFW40H65FB
STMicroelectronics IGBTs 600V 20A High Speed Trench Gate IGBT
Datenblatt
999erwartet ab 23.09.2026
Min.: 1
Mult.: 1

Si TO-220-3 Through Hole Single 600 V 2.3 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGP20V60DF Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long
Datenblatt
1 200erwartet ab 09.10.2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 50 A 167 W - 55 C + 175 C Tube
STMicroelectronics IGBTs 600V 20A Hi Spd TrenchGate FieldStop
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 22 Wochen
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 2 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGW20H60DF Tube
STMicroelectronics STGB20H65FB2
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high-speed HB2 series IGBT in a D2PAK package
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 20 Wochen
Min.: 2 000
Mult.: 1 000
: 1 000

- 20 V, 20 V Reel
STMicroelectronics STGB20H65DFB2
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 15 Wochen
Min.: 1 000
Mult.: 1 000
: 1 000

- 20 V, 20 V Reel
STMicroelectronics STGP30H65DFB2
STMicroelectronics IGBTs Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220 packag
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 15 Wochen
Min.: 1 000
Mult.: 1 000

- 20 V, 20 V Tube

STMicroelectronics IGBTs Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 20 Wochen
Min.: 2 000
Mult.: 1 000
: 1 000

Si D2PAK-3 SMD/SMT Single 435 V 1.1 V - 12 V, 16 V 25 A 150 W - 55 C + 175 C STGB25N40LZAG AEC-Q101 Reel

STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss in a TO-247 long leads
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 22 Wochen
Min.: 600
Mult.: 600

Si - 20 V, 20 V STGWA30M65DF2 Tube