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|
MOSFET DUAL N-CHANNEL 60-V (D-S) 175C MOSFET
- SQJ768ELP-T1_GE3
- Vishay Semiconductors
-
1:
1.63 CHF
-
2 289A magazzino
-
3 000In ordine
-
Nuovo prodotto
|
Codice Mouser
78-SQJ768ELP-T1_GE3
Nuovo prodotto
|
Vishay Semiconductors
|
MOSFET DUAL N-CHANNEL 60-V (D-S) 175C MOSFET
|
|
2 289A magazzino
3 000In ordine
|
|
|
1.63 CHF
|
|
|
1.03 CHF
|
|
|
0.675 CHF
|
|
|
0.536 CHF
|
|
|
Visualizza
|
|
|
0.491 CHF
|
|
|
0.417 CHF
|
|
|
0.408 CHF
|
|
Min: 1
Mult.: 1
|
|
|
|
|
Diodi Schottky SiC SOT-227 Silicon Carbide Schottky Barrier Diode, 1200 V, 200 A
- VS-SC200FA120
- Vishay
-
1:
51.77 CHF
-
158A magazzino
|
Codice Mouser
78-VS-SC200FA120
|
Vishay
|
Diodi Schottky SiC SOT-227 Silicon Carbide Schottky Barrier Diode, 1200 V, 200 A
|
|
158A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
|
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MOSFET N-CHANNEL DEPLETION MODE
- DN2625DK6-G
- Microchip Technology
-
1:
2.50 CHF
-
20 602A magazzino
|
Codice Mouser
689-DN2625DK6-G
|
Microchip Technology
|
MOSFET N-CHANNEL DEPLETION MODE
|
|
20 602A magazzino
|
|
|
2.50 CHF
|
|
|
2.32 CHF
|
|
|
2.19 CHF
|
|
|
2.00 CHF
|
|
Min: 1
Mult.: 1
|
|
|
|
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Transistor bipolari - BJT NPN MULTI-CHIP
- NSVT5551DW1T1G
- onsemi
-
1:
0.857 CHF
-
2 784A magazzino
-
Nuovo prodotto
|
Codice Mouser
863-NSVT5551DW1T1G
Nuovo prodotto
|
onsemi
|
Transistor bipolari - BJT NPN MULTI-CHIP
|
|
2 784A magazzino
|
|
|
0.857 CHF
|
|
|
0.529 CHF
|
|
|
0.349 CHF
|
|
|
0.274 CHF
|
|
|
0.241 CHF
|
|
|
0.189 CHF
|
|
Min: 1
Mult.: 1
:
3 000
|
|
|
|
|
Diodi e raddrizzatori Schottky Automotive 60V, Schottky, 10A
- MBR1060DC-AU_R2_006A1
- Panjit
-
1:
0.817 CHF
-
6 235A magazzino
|
Codice Mouser
241-MBR1060DCAUR26A1
|
Panjit
|
Diodi e raddrizzatori Schottky Automotive 60V, Schottky, 10A
|
|
6 235A magazzino
|
|
|
0.817 CHF
|
|
|
0.51 CHF
|
|
|
0.332 CHF
|
|
|
0.30 CHF
|
|
|
0.272 CHF
|
|
Min: 1
Mult.: 1
:
800
|
|
|
|
|
Moduli IGBT 1700 V, 200 A dual IGBT module
- FF200R17KE4HOSA1
- Infineon Technologies
-
1:
107.49 CHF
-
13A magazzino
|
Codice Mouser
726-FF200R17KE4HOSA1
|
Infineon Technologies
|
Moduli IGBT 1700 V, 200 A dual IGBT module
|
|
13A magazzino
|
|
|
107.49 CHF
|
|
|
96.81 CHF
|
|
Min: 1
Mult.: 1
|
|
|
|
|
Raddrizzatori THYR / DIODE MODULE DK
- DD600N16KXPSA1
- Infineon Technologies
-
1:
293.32 CHF
-
13A magazzino
|
Codice Mouser
726-DD600N16KXPSA1
|
Infineon Technologies
|
Raddrizzatori THYR / DIODE MODULE DK
|
|
13A magazzino
|
|
|
293.32 CHF
|
|
|
241.24 CHF
|
|
Min: 1
Mult.: 1
|
|
|
|
|
MOSFET Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT
- STL36DN6F7
- STMicroelectronics
-
1:
1.21 CHF
-
41 533A magazzino
|
Codice Mouser
511-STL36DN6F7
|
STMicroelectronics
|
MOSFET Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT
|
|
41 533A magazzino
|
|
|
1.21 CHF
|
|
|
0.762 CHF
|
|
|
0.505 CHF
|
|
|
0.396 CHF
|
|
|
0.275 CHF
|
|
|
Visualizza
|
|
|
0.36 CHF
|
|
|
0.274 CHF
|
|
|
0.27 CHF
|
|
Min: 1
Mult.: 1
:
3 000
|
|
|
|
|
MOSFET MOSFET N-CHANNEL P-CHANNEL SOT-563
- DMG1016V-7
- Diodes Incorporated
-
1:
0.412 CHF
-
250 838A magazzino
|
Codice Mouser
621-DMG1016V-7
|
Diodes Incorporated
|
MOSFET MOSFET N-CHANNEL P-CHANNEL SOT-563
|
|
250 838A magazzino
|
|
|
0.412 CHF
|
|
|
0.217 CHF
|
|
|
0.148 CHF
|
|
|
0.118 CHF
|
|
|
0.106 CHF
|
|
|
0.106 CHF
|
|
Min: 1
Mult.: 1
Max.: 1 290
:
3 000
|
|
|
|
|
Diodi Schottky SiC SiC Schottky Barrier Diode, 1200V, 40A, 2nd Gen
- SCS240KE2GC11
- ROHM Semiconductor
-
1:
18.77 CHF
-
1 258A magazzino
|
Codice Mouser
755-SCS240KE2GC11
|
ROHM Semiconductor
|
Diodi Schottky SiC SiC Schottky Barrier Diode, 1200V, 40A, 2nd Gen
|
|
1 258A magazzino
|
|
|
18.77 CHF
|
|
|
13.45 CHF
|
|
|
12.10 CHF
|
|
Min: 1
Mult.: 1
|
|
|
|
|
MOSFET 100V Vds Dual N-Ch AEC-Q101 Qualified
- SQJQ910EL-T1_GE3
- Vishay / Siliconix
-
1:
2.86 CHF
-
43 417A magazzino
|
Codice Mouser
78-SQJQ910EL-T1_GE3
|
Vishay / Siliconix
|
MOSFET 100V Vds Dual N-Ch AEC-Q101 Qualified
|
|
43 417A magazzino
|
|
|
2.86 CHF
|
|
|
1.83 CHF
|
|
|
1.30 CHF
|
|
|
1.06 CHF
|
|
|
1.05 CHF
|
|
|
0.977 CHF
|
|
Min: 1
Mult.: 1
:
2 000
|
|
|
|
|
MOSFET 30V Asymmetric Dual N-Channel Pwr Trench
- FDMS3669S
- onsemi
-
1:
2.19 CHF
-
42 680A magazzino
|
Codice Mouser
512-FDMS3669S
|
onsemi
|
MOSFET 30V Asymmetric Dual N-Channel Pwr Trench
|
|
42 680A magazzino
|
|
|
2.19 CHF
|
|
|
1.42 CHF
|
|
|
0.977 CHF
|
|
|
0.78 CHF
|
|
|
0.644 CHF
|
|
|
0.608 CHF
|
|
Min: 1
Mult.: 1
:
3 000
|
|
|
|
|
Diodi di commutazione per piccoli segnali 85V 150mW
- BAV199T-7-F
- Diodes Incorporated
-
1:
0.269 CHF
-
327 077A magazzino
|
Codice Mouser
621-BAV199T-F
|
Diodes Incorporated
|
Diodi di commutazione per piccoli segnali 85V 150mW
|
|
327 077A magazzino
|
|
|
0.269 CHF
|
|
|
0.151 CHF
|
|
|
0.097 CHF
|
|
|
0.075 CHF
|
|
|
0.065 CHF
|
|
|
0.065 CHF
|
|
Min: 1
Mult.: 1
Max.: 1 380
:
3 000
|
|
|
|
|
MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K
- DMG6602SVT-7
- Diodes Incorporated
-
1:
0.396 CHF
-
372 451A magazzino
|
Codice Mouser
621-DMG6602SVT-7
|
Diodes Incorporated
|
MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K
|
|
372 451A magazzino
|
|
|
0.396 CHF
|
|
|
0.242 CHF
|
|
|
0.15 CHF
|
|
|
0.115 CHF
|
|
|
0.089 CHF
|
|
|
0.066 CHF
|
|
Min: 1
Mult.: 1
Max.: 3 000
:
3 000
|
|
|
|
|
MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified
- SQ1539EH-T1_GE3
- Vishay / Siliconix
-
1:
0.333 CHF
-
143 156A magazzino
|
Codice Mouser
78-SQ1539EH-T1_GE3
|
Vishay / Siliconix
|
MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified
|
|
143 156A magazzino
|
|
|
0.333 CHF
|
|
|
0.207 CHF
|
|
|
0.165 CHF
|
|
|
0.157 CHF
|
|
|
0.142 CHF
|
|
|
Visualizza
|
|
|
0.15 CHF
|
|
|
0.138 CHF
|
|
|
0.136 CHF
|
|
Min: 1
Mult.: 1
:
3 000
|
|
|
|
|
MOSFET P Ch -20Vds 8Vgs AEC-Q101 Qualified
- SQ3985EV-T1_GE3
- Vishay / Siliconix
-
1:
0.95 CHF
-
110 353A magazzino
|
Codice Mouser
78-SQ3985EV-T1_GE3
|
Vishay / Siliconix
|
MOSFET P Ch -20Vds 8Vgs AEC-Q101 Qualified
|
|
110 353A magazzino
|
|
|
0.95 CHF
|
|
|
0.597 CHF
|
|
|
0.393 CHF
|
|
|
0.303 CHF
|
|
|
0.239 CHF
|
|
|
Visualizza
|
|
|
0.275 CHF
|
|
|
0.22 CHF
|
|
|
0.218 CHF
|
|
Min: 1
Mult.: 1
:
3 000
|
|
|
|
|
MOSFET Dual P-Chnl 30-V D-S AEC-Q101 Qualified
- SQ4949EY-T1_GE3
- Vishay Semiconductors
-
1:
1.98 CHF
-
31 294A magazzino
|
Codice Mouser
78-SQ4949EY-T1_GE3
|
Vishay Semiconductors
|
MOSFET Dual P-Chnl 30-V D-S AEC-Q101 Qualified
|
|
31 294A magazzino
|
|
|
1.98 CHF
|
|
|
1.27 CHF
|
|
|
0.872 CHF
|
|
|
0.693 CHF
|
|
|
0.637 CHF
|
|
|
0.597 CHF
|
|
Min: 1
Mult.: 1
:
2 500
|
|
|
|
|
MOSFET N Ch P Ch 100/-100V AEC-Q101 Qualified
- SQJ570EP-T1_GE3
- Vishay / Siliconix
-
1:
1.48 CHF
-
33 857A magazzino
|
Codice Mouser
78-SQJ570EP-T1_GE3
|
Vishay / Siliconix
|
MOSFET N Ch P Ch 100/-100V AEC-Q101 Qualified
|
|
33 857A magazzino
|
|
|
1.48 CHF
|
|
|
0.888 CHF
|
|
|
0.632 CHF
|
|
|
0.499 CHF
|
|
|
0.456 CHF
|
|
|
0.395 CHF
|
|
Min: 1
Mult.: 1
:
3 000
|
|
|
|
|
MOSFET 60V 8A 34W AEC-Q101 Qualified
- SQJ960EP-T1_GE3
- Vishay Semiconductors
-
1:
2.46 CHF
-
77 816A magazzino
|
Codice Mouser
78-SQJ960EP-T1_GE3
|
Vishay Semiconductors
|
MOSFET 60V 8A 34W AEC-Q101 Qualified
|
|
77 816A magazzino
|
|
|
2.46 CHF
|
|
|
1.60 CHF
|
|
|
1.11 CHF
|
|
|
0.896 CHF
|
|
|
0.857 CHF
|
|
|
0.801 CHF
|
|
Min: 1
Mult.: 1
:
3 000
|
|
|
|
|
Moduli a semiconduttori discreti SiC, Module, 16mohm, 1200V, 33.8 mm, FM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM
- CAB016M12FM3T
- Wolfspeed
-
1:
79.35 CHF
-
13A magazzino
-
3916.10.2026 previsto
|
Codice Mouser
941-CAB016M12FM3T
|
Wolfspeed
|
Moduli a semiconduttori discreti SiC, Module, 16mohm, 1200V, 33.8 mm, FM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM
|
|
13A magazzino
3916.10.2026 previsto
|
|
Min: 1
Mult.: 1
|
|
|
|
|
MOSFET Asymmetric N ch 30V/30V 55A/85A P
- XP3832CMT
- YAGEO XSemi
-
1:
1.58 CHF
-
2 997A magazzino
|
Codice Mouser
603-XP3832CMT
|
YAGEO XSemi
|
MOSFET Asymmetric N ch 30V/30V 55A/85A P
|
|
2 997A magazzino
|
|
|
1.58 CHF
|
|
|
1.00 CHF
|
|
|
0.677 CHF
|
|
|
0.536 CHF
|
|
|
0.432 CHF
|
|
|
Visualizza
|
|
|
0.49 CHF
|
|
|
0.404 CHF
|
|
|
0.392 CHF
|
|
Min: 1
Mult.: 1
:
3 000
|
|
|
|
|
MOSFET 80V N-Ch Dual Cool PowerTrench MOSFET
- FDMS86300DC
- onsemi
-
1:
3.33 CHF
-
35 774A magazzino
|
Codice Mouser
512-FDMS86300DC
|
onsemi
|
MOSFET 80V N-Ch Dual Cool PowerTrench MOSFET
|
|
35 774A magazzino
|
|
|
3.33 CHF
|
|
|
2.19 CHF
|
|
|
1.62 CHF
|
|
|
1.62 CHF
|
|
Min: 1
Mult.: 1
Max.: 420
:
3 000
|
|
|
|
|
MOSFET 25V Vds 12V Vgs SO-8
- SI4228DY-T1-GE3
- Vishay Semiconductors
-
1:
1.16 CHF
-
51 277A magazzino
|
Codice Mouser
78-SI4228DY-T1-GE3
|
Vishay Semiconductors
|
MOSFET 25V Vds 12V Vgs SO-8
|
|
51 277A magazzino
|
|
|
1.16 CHF
|
|
|
0.735 CHF
|
|
|
0.487 CHF
|
|
|
0.381 CHF
|
|
|
0.309 CHF
|
|
|
Visualizza
|
|
|
0.347 CHF
|
|
|
0.288 CHF
|
|
Min: 1
Mult.: 1
:
2 500
|
|
|
|
|
MOSFET Dual P-Channel 60V AEC-Q101 Qualified
- SQ4961EY-T1_GE3
- Vishay / Siliconix
-
1:
1.85 CHF
-
25 493A magazzino
|
Codice Mouser
78-SQ4961EY-T1_GE3
|
Vishay / Siliconix
|
MOSFET Dual P-Channel 60V AEC-Q101 Qualified
|
|
25 493A magazzino
|
|
|
1.85 CHF
|
|
|
1.19 CHF
|
|
|
0.809 CHF
|
|
|
0.643 CHF
|
|
|
0.568 CHF
|
|
|
Visualizza
|
|
|
0.591 CHF
|
|
|
0.547 CHF
|
|
Min: 1
Mult.: 1
:
2 500
|
|
|
|
|
MOSFET SuperSOT-3
- FDC6318P
- onsemi
-
1:
0.959 CHF
-
54 995A magazzino
|
Codice Mouser
512-FDC6318P
|
onsemi
|
MOSFET SuperSOT-3
|
|
54 995A magazzino
|
|
|
0.959 CHF
|
|
|
0.526 CHF
|
|
|
0.371 CHF
|
|
|
0.371 CHF
|
|
Min: 1
Mult.: 1
Max.: 380
:
3 000
|
|
|
