SiC MOSFETs

GeneSiC Semiconductor’s G3R™ Silicon Carbide (SiC) MOSFETs offer RDS(ON) levels from 12mΩ to 1000mΩ and robustness for efficiency and system reliability in automotive and industrial applications. These MOSFETs deliver a fast switching frequency, increased power density, reduced ringing (EMI), and a compact size. The G3R SiC MOSFETs are offered in optimized low-inductance discrete packages (SMD and through-hole). The modules are highly optimized for power system designs that require elevated efficiency levels at all operating temperatures and ultra-fast switching speeds with ultra-low losses. GeneSiC SiC MOSFETs provide faster switching and lower ON resistance than silicon-based products. Additional features include superior electric characteristics at high temperatures and significantly lower switching loss, allowing smaller peripheral components to be used.

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Qtà RoHS Modello ECAD Stile di montaggio
Package/involucro
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
GeneSiC Semiconductor MOSFET SiC 1200V 12mohm TO-247-4 G3R SiC MOSFET
Scheda dati
1 642A magazzino
49.92 CHF
46.53 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 111 A 12 mOhms - 10 V, + 22 V 2.7 V 288 nC - 55 C + 175 C 567 W Enhancement
GeneSiC Semiconductor MOSFET SiC 1700V 450mohm TO-247-3 G3R SiC MOSFET
Scheda dati
1 737A magazzino
5.80 CHF
5.21 CHF
5.00 CHF
4.69 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.7 kV 7 A 450 mOhms - 5 V, + 15 V 2.7 V 13 nC - 55 C + 175 C 70 W Enhancement
GeneSiC Semiconductor MOSFET SiC 1700V 450mohm TO-263-7 G3R SiC MOSFET
Scheda dati
800A magazzino
Nastro continuo
6.47 CHF
5.84 CHF
5.60 CHF
5.26 CHF
Nastrati
4.75 CHF
Visualizza
Min: 1
Mult.: 1
: 800
SMD/SMT TO-263-7 1 Channel 1.7 kV 8 A 630 mOhms - 5 V, + 15 V 2.7 V 13 nC - 55 C + 175 C 71 W Enhancement
GeneSiC Semiconductor MOSFET SiC 1700V 20mohm TO-247-4 G3R SiC MOSFET
Scheda dati
53A magazzino
15021.04.2027 previsto
86.29 CHF
83.22 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.7 kV 101 A 20 mOhms - 5 V, + 15 V 2.7 V 256 nC - 55 C + 175 C 569 W Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 30mohm TO-247-4 G3R SiC MOSFET
Scheda dati
289A magazzino
18.14 CHF
16.66 CHF
16.11 CHF
15.71 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 70 A 30 mOhms - 5 V, + 15 V 2.7 V 118 nC - 55 C + 175 C 281 W Enhancement
GeneSiC Semiconductor MOSFET SiC 1700V 45mohm TO-247-4 G3R SiC MOSFET
Scheda dati
109A magazzino
26.62 CHF
24.42 CHF
23.76 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.7 kV 48 A 45 mOhms - 5 V, + 15 V 2.7 V 106 nC - 55 C + 175 C 284 W Enhancement
GeneSiC Semiconductor MOSFET SiC 1700V 160mohm TO-247-3 G3R SiC MOSFET
Scheda dati
5A magazzino
1 800In ordine
9.85 CHF
8.90 CHF
8.56 CHF
8.10 CHF
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.7 kV 17 A 160 mOhms - 5 V, + 15 V 2.7 V 29 nC - 55 C + 175 C 138 W Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 40mohm TO-247-4 G3R SiC MOSFET
Scheda dati
Tempo di consegna, se non a magazzino 26 settimane
14.23 CHF
12.99 CHF
12.53 CHF
12.07 CHF
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A 40 mOhms - 5 V, + 15 V 2.7 V 88 nC - 55 C + 175 C 228 W Enhancement