3300V & 2300V Silicon Carbide (SiC) MOSFETs

Navitas Semiconductor 3300V and 2300V Silicon Carbide (SiC) MOSFETs are based on the latest GeneSiC™ trench-assisted planar (TAP) technology and feature flexible packaging formats, including power module, discrete, and known good die (KGD). For high-power density and high-reliability systems, the MOSFETs are integrated into an advanced SiCPAK™ G+ power module package, in half-bridge and full-bridge circuit configurations. The proprietary TAP SiC MOSFET technology offers improved performance, reliability, and avalanche robustness. The TAP architecture performs a multi-step e-field management profile to significantly reduce voltage stress and improve voltage blocking capabilities compared to trench and traditional-planar SiC MOSFETs. Navitas 3300V and 2300V SiC MOSFETs are ideal for AI data centers, grid and energy infrastructure, and industrial electrification, including energy storage, renewable, and megawatt-scale fast-charging applications.

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Beschreibung Datenblatt Verfügbarkeit Preis (CHF) Ergebnisse in der Tabelle nach dem Einheitspreis bei Ihrer Menge filtern.
Menge RoHS ECAD Model Verpackung/Gehäuse
Vds - Drain-Source-Durchschlagspannung
Id - Drain-Gleichstrom
Rds On - Drain-Source-Widerstand
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Serie
Verpackung
GeneSiC Semiconductor MOSFET-Module 2300V 5.8m Half-Bridge SiCPAK G+ SiC Power Module Nicht-auf-Lager-Vorlaufzeit 26 Wochen
266.96 CHF
Min.: 48
Mult.: 48
2.3 kV 296 A N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor MOSFET-Module 2300V 5.8m Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM Nicht-auf-Lager-Vorlaufzeit 26 Wochen
273.40 CHF
Min.: 48
Mult.: 48
2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor MOSFET-Module 2300V 8.0m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 26 Wochen
387.09 CHF
Min.: 48
Mult.: 48
SiCPAK G+ 2.3 kV 8 mOhms - 55 C + 150 C N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor MOSFET-Module 2300V 8.0m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 26 Wochen
393.53 CHF
Min.: 48
Mult.: 48
2.3 kV 8 mOhms - 55 C + 150 C N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H11MT23GB4
GeneSiC Semiconductor MOSFET-Module 2300V 11.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module Nicht-auf-Lager-Vorlaufzeit 26 Wochen
269.28 CHF
Min.: 48
Mult.: 48
2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H11MT23GB4-T
GeneSiC Semiconductor MOSFET-Module 2300V 11.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM Nicht-auf-Lager-Vorlaufzeit 26 Wochen
275.72 CHF
Min.: 48
Mult.: 48
2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H22MT33GB4
GeneSiC Semiconductor MOSFET-Module 3300V 22.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module Nicht-auf-Lager-Vorlaufzeit 26 Wochen
374.00 CHF
Min.: 48
Mult.: 48
3.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H22MT33GB4-T
GeneSiC Semiconductor MOSFET-Module 3300V 22.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM Nicht-auf-Lager-Vorlaufzeit 26 Wochen
380.44 CHF
Min.: 48
Mult.: 48
3.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray