Risultati: 49
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (CHF) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Qualifica Nome commerciale Confezione
Infineon Technologies MOSFET IFX FET 60V 1 774A magazzino
Min: 1
Mult.: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 60 V 139 A 2.85 mOhms - 20 V, 20 V 2.1 V 68 nC - 55 C + 175 C 150 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 1 856A magazzino
Min: 1
Mult.: 1
Si Through Hole N-Channel 1 Channel 100 V 77 A 8.2 mOhms - 20 V, 20 V 3.8 V 28 nC - 55 C + 175 C 100 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 15V-30V 6 876A magazzino
Min: 1
Mult.: 1
: 5 000
Si SMD/SMT TDSON-FL-8 N-Channel 1 Channel 30 V 100 A 1.9 mOhms - 20 V, 20 V 1.2 V 22 nC - 55 C + 150 C 69 W Enhancement OptiMOS ~ StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 60V 1 007A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 198 A 1.4 mOhms - 20 V, 20 V 2.1 V 203 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFET 30V 1 N-CH HEXFET 3.1mOhms 41nC 4 180A magazzino
Min: 1
Mult.: 1
: 4 000

Si SMD/SMT PQFN-8 N-Channel 1 Channel 30 V 120 A 4.6 mOhms - 20 V, 20 V 1.8 V 41 nC - 55 C + 150 C 3.6 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 15V-30V 4 237A magazzino
Min: 1
Mult.: 1
: 5 000
Si SMD/SMT TSDSON-FL-8 N-Channel 1 Channel 30 V 40 A 8.6 mOhms - 20 V, 20 V 1.2 V 5.2 nC - 55 C + 150 C Enhancement OptiMOS ~ StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET 30V SINGLE N-CH 4.1mOhms 14nC 3 335A magazzino
Min: 1
Mult.: 1
: 4 000

Si SMD/SMT PQFN-8 N-Channel 1 Channel 30 V 90 A 6.3 mOhms - 20 V, 20 V 1.8 V 31 nC - 55 C + 150 C 54 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET Addresses a broad range of applications from low- to high-switching frequency 4 961A magazzino
4 00021.08.2026 previsto
Min: 1
Mult.: 1
: 2 000

Si SMD/SMT TO-252-3 N-Channel 1 Channel 30 V 143 A 2.05 mOhms - 20 V, 20 V 2.35 V 33 nC - 55 C + 175 C 136 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET Addresses a broad range of applications from low- to high-switching frequency 4 955A magazzino
Min: 1
Mult.: 1
: 5 000

Si SMD/SMT TSDSON-8 N-Channel 1 Channel 30 V 128 A 2.8 mOhms - 20 V, 20 V 2.35 V 27 nC - 55 C + 175 C 83 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 4 159A magazzino
Min: 1
Mult.: 1
: 1 800

Si SMD/SMT HSOF-8 N-Channel 1 Channel 100 V 315 A 1.5 mOhms - 20 V, 20 V 2.2 V 161 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 40V 3 441A magazzino
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 201 A 1.15 mOhms - 20 V, 20 V 3.4 V 210 nC - 55 C + 175 C 375 W Enhancement Tube
Infineon Technologies MOSFET IFX FET > 60-80V 1 648A magazzino
Min: 1
Mult.: 1
: 1 800

Si SMD/SMT HSOF-8 N-Channel 1 Channel 80 V 351 A 1.23 mOhms - 20 V, 20 V 2.2 V 170 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V 1 101A magazzino
Min: 1
Mult.: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 302 A 900 uOhms - 20 V, 20 V 2.1 V 210 nC - 55 C + 175 C 375 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET SMALL SIGNAL MOSFETS 2 171A magazzino
Min: 1
Mult.: 1
: 1 000

Si SMD/SMT SOT-223-4 P-Channel 1 Channel 60 V 6.4 A 67 mOhms - 20 V, 20 V 4 V 48 nC - 55 C + 150 C 5 W Enhancement Reel, Cut Tape

Infineon Technologies MOSFET N-Ch 60V 300mA SOT-23-3 448 101A magazzino
117 00024.08.2026 previsto
Min: 1
Mult.: 1
: 3 000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 60 V 300 mA 1.6 Ohms - 20 V, 20 V 1.5 V 600 pC - 55 C + 150 C 500 mW Enhancement AEC-Q100 Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET SMALL SIGNAL MOSFETS 1 604A magazzino
2 00017.09.2026 previsto
Min: 1
Mult.: 1
: 1 000

Si SMD/SMT SOT-223-4 P-Channel 1 Channel 60 V 3.9 A 67 mOhms - 20 V, 20 V 4 V 48 nC - 55 C + 150 C 5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 6 339A magazzino
Min: 1
Mult.: 1
Si Through Hole N-Channel 1 Channel 80 V 115 A 4 mOhms - 20 V, 20 V 3.8 V 54 nC - 55 C + 175 C 150 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg 5 168A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 30 V 260 A 1.95 mOhms - 20 V, 20 V 1.9 V 86 nC - 55 C + 175 C 230 W Enhancement HEXFET Tube
Infineon Technologies MOSFET IFX FET > 60-80V 1 190A magazzino
Min: 1
Mult.: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 80 V 129 A 4 mOhms - 20 V, 20 V 2.2 V 54 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 415A magazzino
80003.09.2026 previsto
Min: 1
Mult.: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 117 A 5.05 mOhms - 20 V, 20 V 2.2 V 51 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V 4 246A magazzino
Min: 1
Mult.: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 80 V 282 A 1.4 mOhms - 20 V, 20 V 2.2 V 170 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET > 60-80V 1 070A magazzino
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 191 A 1.9 mOhms - 20 V, 20 V 3.8 V 124 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 1 368A magazzino
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 184 A 2.6 mOhms - 20 V, 20 V 3.8 V 103 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 1 417A magazzino
Min: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 110 A 5 mOhms - 20 V, 20 V 3.8 V 51 nC - 55 C + 175 C 150 W Enhancement Tube
Infineon Technologies MOSFET IFX FET > 60-80V 3 987A magazzino
Min: 1
Mult.: 1
Si Through Hole N-Channel 1 Channel 80 V 99 A 5.5 mOhms - 20 V, 20 V 3.8 V 36 nC - 55 C + 175 C 107 W Enhancement Tube