4th Generation EF Series MOSFETs

Vishay / Siliconix 4th Generation EF Series MOSFETs offer an extremely low figure-of-merit (FOM) rating for high-performance switching and high efficiency. The MOSFET FOM is calculated as ON-resistance (R(DS)ON) multiplied by gate charge (Qg). Built on Vishay 4th generation super-junction technology, these MOSFETs feature a low typical ON-resistance range of 0.088Ω to 0.225Ω at VGS=10V and a gate charge down to 21nC. For improved switching performance, these devices provide low effective output capacitances (Co(er) and Co(tr)). These values translate into reduced conduction and switching losses to save energy. Vishay / Siliconix 4th Generation EF Series MOSFETs are offered in PowerPAK® 8x8 and TO-220AB packages. The series is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.

Risultati: 22
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (CHF) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Nome commerciale Confezione
Vishay Semiconductors MOSFET TO263 600V 41A N-CH MOSFET 1 228A magazzino
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Si SMD/SMT N-Channel 1 Channel 600 V 41 A 68 mOhms - 30 V, 30 V 5 V 51 nC - 55 C + 150 C 250 W Enhancement
Vishay Semiconductors MOSFET TO220 600V 16A N-CH MOSFET 1 161A magazzino
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 600 V 16 A 68 mOhms - 30 V, 30 V 5 V 51 nC - 55 C + 150 C 39 W Enhancement
Vishay Semiconductors MOSFET TO220 600V 18A N-CH MOSFET 1 286A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 18 A 225 mOhms - 30 V, 30 V 5 V 65 nC - 55 C + 150 C 223 W Enhancement TrenchFET
Vishay Semiconductors MOSFET TO247 600V 41A N-CH MOSFET 902A magazzino
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 600 V 41 A 68 mOhms - 30 V, 30 V 5 V 27 nC - 55 C + 150 C 250 W Enhancement
Vishay Semiconductors MOSFET TO220 600V 29A N-CH MOSFET 1 559A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 29 A 88 mOhms - 30 V, 30 V 5 V 35 nC - 55 C + 150 C 208 W Enhancement TrenchFET
Vishay / Siliconix MOSFET TO220 600V 8.4A N-CH MOSFET 1 516A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 8.4 A 193 mOhms - 30 V, 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay / Siliconix MOSFET PWRPK 600V 16A N-CH MOSFET 2 478A magazzino
Min: 1
Mult.: 1
: 3 000

Si SMD/SMT PowerPAK 8 x 8 N-Channel 1 Channel 600 V 16 A 168 mOhms - 30 V, 30 V 5 V 21 nC - 55 C + 150 C 114 W Enhancement TrenchFET Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET PWRPK 600V 23A N-CH MOSFET 2 647A magazzino
Min: 1
Mult.: 1
: 3 000

Si SMD/SMT PowerPAK 8 x 8 N-Channel 1 Channel 600 V 23 A 109 mOhms - 30 V, 30 V 5 V 31 nC - 55 C + 150 C 156 W Enhancement TrenchFET Reel, Cut Tape, MouseReel
Vishay Semiconductors MOSFET TO220 600V 25A N-CH MOSFET 489A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 109 mOhms - 30 V, 30 V 5 V 31 nC - 55 C + 150 C 179 W Enhancement TrenchFET
Vishay Semiconductors MOSFET TOLL 600V 47A E SERIES 5 094A magazzino
2 00012.10.2026 previsto
Min: 1
Mult.: 1
Max.: 2 000
: 2 000

Si SMD/SMT SO-8 N-Channel 1 Channel 80 V 66 A 12.5 mOhms - 20 V, 20 V 2.5 V 45 nC - 55 C + 175 C 135 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET TO247 600V 61A N-CH MOSFET 373A magazzino
Min: 1
Mult.: 1
Max.: 1 000

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61 A 40 mOhms - 30 V, 30 V 3 V 84 nC - 55 C + 150 C 357 W Enhancement Tube
Vishay / Siliconix MOSFET 600V PowerPAK 8x8 N-CHANNEL 1 819A magazzino
Min: 1
Mult.: 1
: 3 000

Si SMD/SMT PowerPAK-8 x 8 N-Channel 1 Channel 600 V 36 A 71 mOhms - 30 V, 30 V 5 V 50 nC - 55 C + 150 C 202 W Enhancement Reel, Cut Tape, MouseReel
Vishay Semiconductors MOSFET PWRPK 600V 21A N-CH MOSFET 1 375A magazzino
Min: 1
Mult.: 1
: 2 000

Si SMD/SMT SO-8 N-Channel 1 Channel 40 V 35.4 A 2.3 mOhms - 30 V, 30 V 2.5 V 70 nC - 55 C + 150 C 65.7 W Enhancement Reel, Cut Tape
Vishay Semiconductors MOSFET TO220 600V 41A N-CH MOSFET 983A magazzino
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 600 V 41 A 68 mOhms - 30 V, 30 V 5 V 51 nC - 55 C + 150 C 250 W Enhancement
Vishay Semiconductors MOSFET TO252 600V 19A N-CH MOSFET 138A magazzino
3 00021.10.2026 previsto
Min: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 19 A 201 mOhms - 30 V, 30 V 3 V 21 nC - 55 C + 150 C 156 W Enhancement
Vishay / Siliconix MOSFET TO247 600V 8.4A N-CH MOSFET 332A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 8.4 A 168 mOhms - 30 V, 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay / Siliconix MOSFET E Series Pwr MOSFET w/Fast Body Diode 415A magazzino
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 600 V 29 A 100 mOhms - 30 V, 30 V 5 V 35 nC - 55 C + 150 C 35 W Enhancement Tube
Vishay Semiconductors MOSFET TO247 600V 25A N-CH MOSFET 353A magazzino
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 600 V 25 A 125 mOhms - 30 V, 30 V 5 V 31 nC - 55 C + 150 C 179 W Enhancement
Vishay / Siliconix MOSFET TO263 600V 8.4A N-CH MOSFET
95321.09.2026 previsto
Min: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 8.4 A 168 mOhms - 30 V, 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay Semiconductors MOSFET N-CHANNEL 600V
2 000In ordine
Min: 1
Mult.: 1

Si SMD/SMT TO-263AB-4 N-Channel 1 Channel 600 V 46 A 55 mOhms - 30 V, 30 V 5 V 63 nC - 55 C + 150 C 278 W Enhancement Tube
Vishay Semiconductors MOSFET TO263 600V 25A N-CH MOSFET
1 00019.10.2026 previsto
Min: 1
Mult.: 1

Si SMD/SMT N-Channel 1 Channel 600 V 25 A 125 mOhms - 30 V, 30 V 5 V 31 nC - 55 C + 150 C 179 W Enhancement
Vishay Semiconductors MOSFET TO220 600V 11A N-CH MOSFET 1 000Disponibile a magazzino
Min: 1 000
Mult.: 1 000

Si Through Hole N-Channel 1 Channel 600 V 11 A 125 mOhms - 30 V, 30 V 5 V 31 nC - 55 C + 150 C 179 W Enhancement