Results: 11
Select Image Part # Mfr. Description Datasheet Availability Pricing (CHF) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 740In Stock
2 000On Order
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29.31 CHF
21.80 CHF
21.79 CHF
20.81 CHF
Reel
20.65 CHF
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 189 A 7.7 mOhms - 7 V, + 20 V 5.1 V 195 nC - 55 C + 175 C 800 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 143In Stock
2 000On Order
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21.95 CHF
15.33 CHF
14.93 CHF
14.14 CHF
Reel
13.38 CHF
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 144 A 12.2 mOhms - 7 V, + 20 V 5.1 V 124 nC - 55 C + 175 C 600 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 294In Stock
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13.14 CHF
7.87 CHF
7.86 CHF
Reel
7.45 CHF
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 87 A 21.6 mOhms - 7 V, + 20 V 5.1 V 71 nC - 55 C + 175 C 385 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 1 609In Stock
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10.60 CHF
6.45 CHF
6.36 CHF
Reel
6.10 CHF
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 75 A 25.4 mOhms - 7 V, + 20 V 5.1 V 60 nC - 55 C + 175 C 335 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 561In Stock
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7.70 CHF
4.25 CHF
3.91 CHF
3.88 CHF
Reel
3.47 CHF
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 41 A 52.6 mOhms - 7 V, + 20 V 5.1 V 30 nC - 55 C + 175 C 205 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 844In Stock
2 000On Order
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4.69 CHF
2.46 CHF
2.25 CHF
2.03 CHF
Reel
1.92 CHF
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 14.9 A 181.4 mOhms - 7 V, + 20 V 5.1 V 9.7 nC - 55 C + 175 C 94 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 5 092In Stock
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4.24 CHF
2.21 CHF
2.00 CHF
1.77 CHF
Reel
1.76 CHF
Min.: 1
Mult.: 1
Max.: 1 000
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 8.1 A 233.9 mOhms - 7 V, + 20 V 5.1 V 7.9 nC - 55 C + 175 C 80 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 200In Stock
1 000Expected 10/12/2026
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9.09 CHF
5.19 CHF
4.67 CHF
Reel
4.42 CHF
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 52 A 39.6 mOhms - 7 V, + 20 V 5.1 V 8.1 nC - 55 C + 175 C 250 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 46In Stock
2 000Expected 10/06/2027
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6.77 CHF
3.65 CHF
3.35 CHF
3.24 CHF
Reel
2.85 CHF
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 29 A 78.1 mOhms - 7 V, + 20 V 5.1 V 20.6 nC - 55 C + 175 C 158 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
2 000On Order
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15.63 CHF
9.84 CHF
9.59 CHF
9.36 CHF
Reel
9.19 CHF
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 107 A 17.1 mOhms - 7 V, + 20 V 5.1 V 89 nC - 55 C + 175 C 470 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
2 000Expected 18/02/2027
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5.49 CHF
2.92 CHF
2.68 CHF
2.50 CHF
Reel
2.37 CHF
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.2 kV 21.2 A 115.7 mOhms - 7 V, + 20 V 5.1 V 14.4 nC - 55 C + 175 C 123 W Enhancement