|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
28.60 CHF
-
1 043Auf Lager
-
1 000erwartet ab 03.09.2026
|
Mouser-Teilenr.
726-IMBG120R008M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 043Auf Lager
1 000erwartet ab 03.09.2026
|
|
|
28.60 CHF
|
|
|
21.47 CHF
|
|
|
21.47 CHF
|
|
Min.: 1
Mult.: 1
Max.: 10
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
16.50 CHF
-
3 290Auf Lager
|
Mouser-Teilenr.
726-IMBG120R017M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3 290Auf Lager
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
22.32 CHF
-
558Auf Lager
-
1 000erwartet ab 03.09.2026
|
Mouser-Teilenr.
726-IMBG120R012M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
558Auf Lager
1 000erwartet ab 03.09.2026
|
|
|
22.32 CHF
|
|
|
17.23 CHF
|
|
|
14.35 CHF
|
|
|
14.12 CHF
|
|
|
11.83 CHF
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
12.83 CHF
-
365Auf Lager
|
Mouser-Teilenr.
726-IMBG120R022M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
365Auf Lager
|
|
|
12.83 CHF
|
|
|
9.04 CHF
|
|
|
7.75 CHF
|
|
|
7.34 CHF
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
11.00 CHF
-
1 673Auf Lager
|
Mouser-Teilenr.
726-IMBG120R026M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 673Auf Lager
|
|
|
11.00 CHF
|
|
|
7.69 CHF
|
|
|
7.69 CHF
|
|
Min.: 1
Mult.: 1
Max.: 60
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
8.58 CHF
-
316Auf Lager
|
Mouser-Teilenr.
726-IMBG120R040M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
316Auf Lager
|
|
|
8.58 CHF
|
|
|
5.92 CHF
|
|
|
4.60 CHF
|
|
|
4.35 CHF
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
6.23 CHF
-
525Auf Lager
-
2 000erwartet ab 18.05.2027
|
Mouser-Teilenr.
726-IMBG120R078M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
525Auf Lager
2 000erwartet ab 18.05.2027
|
|
|
6.23 CHF
|
|
|
4.22 CHF
|
|
|
3.09 CHF
|
|
|
3.01 CHF
|
|
|
2.85 CHF
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
5.37 CHF
-
616Auf Lager
|
Mouser-Teilenr.
726-IMBG120R116M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
616Auf Lager
|
|
|
5.37 CHF
|
|
|
3.47 CHF
|
|
|
2.61 CHF
|
|
|
2.46 CHF
|
|
|
2.33 CHF
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
4.58 CHF
-
1 692Auf Lager
|
Mouser-Teilenr.
726-IMBG120R181M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 692Auf Lager
|
|
|
4.58 CHF
|
|
|
3.06 CHF
|
|
|
2.19 CHF
|
|
|
2.00 CHF
|
|
|
1.89 CHF
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
4.14 CHF
-
6 304Auf Lager
|
Mouser-Teilenr.
726-IMBG120R234M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
6 304Auf Lager
|
|
|
4.14 CHF
|
|
|
2.75 CHF
|
|
|
1.95 CHF
|
|
|
1.74 CHF
|
|
|
1.73 CHF
|
|
|
1.64 CHF
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
7.15 CHF
-
1 968erwartet ab 27.07.2026
|
Mouser-Teilenr.
726-IMBG120R053M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 968erwartet ab 27.07.2026
|
|
|
7.15 CHF
|
|
|
4.89 CHF
|
|
|
3.61 CHF
|
|
|
3.42 CHF
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
Schweiz