Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

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Qtà RoHS Tipo di prodotto
Tecnologia
Stile di montaggio
Package/involucro
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 25 mOhm TO-247-4
Scheda dati
258A magazzino
Min: 1
Mult.: 1

SiC MOSFETS Through Hole TO-247-4
Microchip Technology Diodi Schottky SiC SIC SBD 1200 V 30 A TO-220
Scheda dati
826A magazzino
Min: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-220-2
Microchip Technology Diodi Schottky SiC 700 V, 10 A SiC SBD
Scheda dati
623A magazzino
Min: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-220-2
Microchip Technology Diodi Schottky SiC SIC SBD 1200 V 30 A TO-247
Scheda dati
43A magazzino
Min: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-3
Microchip Technology Diodi Schottky SiC UNRLS, FG, GEN2 SIC SBD
Scheda dati
141A magazzino
Min: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-2
Microchip Technology Diodi Schottky SiC 1200 V, 30 A SiC SBD
Scheda dati
575A magazzino
Min: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-2
Microchip Technology MOSFET SiC FG, SIC MOSFET, TO-247 4-LEAD
Scheda dati
982A magazzino
Min: 1
Mult.: 1

SiC MOSFETS Through Hole TO-247-4
Microchip Technology Diodi Schottky SiC SIC SBD 1200 V 50 A TO-247
Scheda dati
888A magazzino
Min: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-2

Microchip Technology Diodi Schottky SiC SIC SBD 1200 V 50 A TO-247
Scheda dati
76A magazzino
Min: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-3
Microchip Technology MOSFET SiC MOSFET SIC 1700 V 750 mOhm TO-247
Scheda dati
853A magazzino
Min: 1
Mult.: 1

SiC MOSFETS Through Hole TO-247-3
Microchip Technology MOSFET SiC MOSFET SIC 1700 V 35 mOhm TO-268
Scheda dati
96A magazzino
Min: 1
Mult.: 1

SiC MOSFETS SMD/SMT TO-268-3
Microchip Technology Diodi Schottky SiC UNRLS, FG, GEN2 SIC SBD
Scheda dati
18A magazzino
Min: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-2
Microchip Technology Diodi Schottky SiC 1200 V, 10 A SiC SBD
Scheda dati
82A magazzino
Min: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-2
Microchip Technology Diodi Schottky SiC 1200 V, 10 A SiC SBD
Scheda dati
75A magazzino
Min: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-220-2
Microchip Technology MOSFET SiC MOSFET SIC 700 V 15 mOhm TO-247-4
Scheda dati
49A magazzino
Min: 1
Mult.: 1

SiC MOSFETS Through Hole TO-247-4
Microchip Technology Diodi Schottky SiC SIC SBD 700 V 30 A TO-247
Scheda dati
159A magazzino
Min: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-2
Microchip Technology Diodi Schottky SiC 700V, 30A SiC SBD
Scheda dati
70A magazzino
Min: 1
Mult.: 1

SiC Schottky Diodes SMD/SMT D3PAK
Microchip Technology Diodi Schottky SiC SIC SBD 1200 V 30 A TO-268
Scheda dati
25A magazzino
Min: 1
Mult.: 1

SiC Schottky Diodes SMD/SMT D3PAK
Microchip Technology Diodi Schottky SiC 700 V, 50 A SiC SBD
Scheda dati
105A magazzino
15003.09.2026 previsto
Min: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-2
Microchip Technology Diodi Schottky SiC SIC SBD 1200 V 50 A TO-268
Scheda dati
41A magazzino
Min: 1
Mult.: 1

SiC Schottky Diodes SMD/SMT D3PAK
Microchip Technology MOSFET SiC MOSFET SIC 700 V 60 mOhm TO-247-4
Scheda dati
55A magazzino
Min: 1
Mult.: 1

SiC MOSFETS Through Hole TO-247-4
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 80 mOhm TO-247-4
Scheda dati
151A magazzino
Min: 1
Mult.: 1

SiC MOSFETS Through Hole TO-247-4
Microchip Technology MOSFET SiC MOSFET SIC 1700 V 750 mOhm TO-268
Scheda dati
120A magazzino
Min: 1
Mult.: 1

SiC MOSFETS SMD/SMT D3PAK-3
Microchip Technology MOSFET SiC MOSFET SIC 1700 V 35 mOhm TO-247-4
Scheda dati
50903.09.2026 previsto
Min: 1
Mult.: 1

SiC MOSFETS Through Hole TO-247-4
Microchip Technology Diodi Schottky SiC UNRLS, FG, GEN2 SIC SBD
Scheda dati
45025.09.2026 previsto
Min: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-2